Part Number Hot Search : 
M62727ML LTP180LF 1N4947G 101K35 2SC34 2SC16 100PG SG2811
Product Description
Full Text Search
 

To Download DG441LEDQ-GE3 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 1 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 16 ? , low charge injection and leakage, +12 v / +5 v / +3 v / 5 v quad spst switches description the dg441le, dg442le monolithic quad single-pole-single-throw anal og switches are designed to provide high speed, low error switching of analog signals. the dg441le has a normally closed function. the dg442le has a normally open function. the dg441le, dg442le feature low charge injection of a few picocoulombs over the full analog switch range. combining low on resistance (16 ? , typ.), low parasitic capacitance (c d(on) 15 pf), and fast switching speed (t on , 18 ns, typ.), the devices ar e ideal for data acquisition, sample-and-hold, and adc input circuit designs. the dg441le, dg442le operate on single and dual supplies. single supply voltage ranges from 3 v to 16 v while dual supply operation is recommended with 3 v to 8 v. each switch conducts equally well in both direction when on, and blocks input voltages up to the supply levels when off. the dg441le, dg442le are available in 16 lead tssop, soic, and pdip packages. features ? 3 v to 16 v single supply or 3 v to 8 v dual supply ? on-resistance r ds(on) : 16 ? ? fast switching t on : 18 ns,typ. ? low parasitic capacitance: ? c d(on) : 15 pf ? c s(off) : 5 pf ? less than 8 pc charge injection over the full signal swing range ? low leakage: < 10 pa, typ. ? ttl, cmos compatible ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 note ? * this datasheet provides information about parts that are ? rohs-compliant and / or parts th at are non-rohs-compliant. for ? example, parts with lead (pb) te rminations are not rohs-compliant. ? please see the information / tables in this datasheet for details. benefits ? wide operation voltage range ? low signal errors and distortion ?fast switching time ? minimized switching glitch applications ? automatic test equipment ? process control and automation ? data acquisition systems ? meters and instruments ? medical and healthcare systems ? communication systems ? audio and video signal routing ? relay replacement ? battery powered systems functional block diagram and pin configuration ? ? logic 0 ? 0.8 v ? logic 1 ? 2.4 v available available available dg441le / 442le dual-in-line, tssop and soic in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd nc s 4 s 3 d 4 d 3 in 4 in 3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 top view 9 truth table logic dg441le dg442le 0onoff 1offon
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 2 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. signals on s x , d x , or in x exceeding v+ or v- will be clamped by internal diodes. limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 7 mw/c above 75 c. d. derate 7.6 mw/c above 75 c. e. derate 12 mw/c above 75 c. ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. oodering information temp. range configuration package par t number min. order / pack. quantity -40 c to +85 c lead (pb)-free dg441le 16-pin tssop DG441LEDQ-GE3 tube 360 units dg441ledq-t1-ge3 tape and reel, 3000 units 16-pin soic dg441ledy-ge3 tube 500 units dg441ledy-t1-ge3 tape and reel, 2500 units 16-pin pdip dg441ledj-ge3 tube 500 units dg442le 16-pin tssop dg442ledq-ge3 tube 360 units dg442ledq-t1-ge3 tape and reel, 3000 units 16-pin soic dg442ledy-ge3 tube 500 units dg442ledy-t1-ge3 tape and reel, 2500 units 16-pin pdip dg442ledj-ge3 tube 500 units absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit v+ to v- -0.3 to +18 v gnd to v- a 18 digital inputs a v s , v d gnd -0.3 to (v +) + 0.3 or 30 ma, whichever occurs first continuous current (any terminal) 30 ma current, s or d (pulsed 1 ms, 10 % duty cycle) 100 storage temperature (dq, dy suffix) -65 to +125 c (ak suffix) -65 to +150 power dissipation (packages) b 16-pin tssop c 450 mw 16-pin narrow body soic d 650 16-pin cerdip e 900 esd human body model (hbm); per ansi / esda / jedec ? js-001 2500 v latch up current, per jesd78d 400 ma
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 3 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a (single supply 12 v) parameter symbol test conditions unless otherwise specified v+ = 12 v, v- = 0 v v in = 2.4 v, 0.8 v f temp. b typ. c a suffix limits -55 c to +125 c d suffix limits -40 c to +85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 0 12 0 12 v drain-source ? on-resistance r ds(on) v+ = 10.8 v, v- = 0 v i s = 10 ma, v d = 2 v / 9 v room 16 - 26 - 26 ? full - - 40 - 35 on-resistance match ? between channels e ? r ds(on) i s = 10 ma, v d = 9 v room 0.1 - 0.5 - 0.5 switch off leakage current i s(off) v d = 1 v / 11 v, v s = 11 v / 1 v room - -1 1 -1 1 na full - -15 15 -10 10 i d(off) room - -1 1 -1 1 full - -15 15 -10 10 channel on leakage current i d(on) v s = v d = 11 v / 1 v room - -1 1 -1 1 full - -15 15 -10 10 digital control input current, v in low i il v in under test = 0.8 v full 0.01 -1.5 1.5 -1 1 a input current, v in high i ih v in under test = 2.4 v full - -1.5 1.5 -1 1 dynamic characteristics turn-on time t on r l = 300 ? , c l = 35 pf v s = 5 v, see figure 2 room 18 - 60 - 60 ns full - - 80 - 70 turn-off time t off room 18 - 35 - 35 full - - 50 - 45 charge injection e qv g = 0 v, r g = 0 ? , c l = 10 nf room 6.6 - - - - pc off isolation e oirr r l = 50 ? , c l = 5 pf, f = 1 mhz room 68.4 - - - - db channel-to-channel crosstalk e x talk room 114 - - - - source off capacitance e c s(off) f = 1 mhz room 5 - - - - pf drain off capacitance e c d(off) room 6 - - - - channel on capacitance e c d(on) room 15 - - - - power supplies positive supply current i + v in = 0 v or 12 v full 0.03 - 1.5 - 1 a negative supply current i - room - -1 - -1 - full 0.002 -7.5 - -5 - ground current i gnd full 0.002 -1.5 - -1 -
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 4 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a (dual supply 5 v) parameter symbol test conditions unless otherwise specified v+ = 5 v, v- = -5 v v in = 2.4 v, 0.8 v f temp. b typ. c a suffix limits -55 c to +125 c d suffix limits -40 c to +85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - -5 5 -5 5 v drain-source ? on-resistance r ds(on) v+ = 5 v, v- = -5 v i s = 10 ma, v d = 3.5 v room 18 - 30 - 30 ? full - - 42 - 37 on-resistance match ? between channels e ? r ds(on) i s = 10 ma, v d = 3.5 v room 0.1 - 0.5 - 0.5 switch off ? leakage current g i s(off) v+ = 5.5, v- = -5.5 v v d = 4.5 v, v s = 4.5 v room - -1 1 -1 1 na full - -15 15 -10 10 i d(off) room - -1 1 -1 1 full - -15 15 -10 10 channel on ? leakage current g i d(on) v+ = 5.5 v, v- = -5.5 v v s = v d = 4.5 v room - -1 1 -1 1 full - -15 15 -10 10 digital control input current, v in low e i il v in under test = 0.8 v full 0.05 -1.5 1.5 -1 1 a input current, v in high e i ih v in under test = 2.4 v full 0.05 -1.5 1.5 -1 1 dynamic characteristics turn-on time t on r l = 300 ? , c l = 35 pf v s = 3.5 v, see figure 2 room 42 - 65 - 65 ns full - - 90 - 75 turn-off time t off room 34 - 45 - 45 full - - 65 - 55 charge injection e qv g = 0 v, r g = 0 ? , c l = 10 nf room 5.8 - - - - pc off isolation e oirr r l = 50 ? , c l = 5 pf, f = 1 mhz room 68.4 - - - - db channel-to-channel crosstalk e x talk room 113 - - - - source off capacitance e c s(off) f = 1 mhz room 5 - - - - pf drain off capacitance e c d(off) room 6 - - - - channel on capacitance e c d(on) room 14 - - - - power supplies positive supply current e i + v in = 0 v or 5 v full 0.002 - 1.5 - 1 a negative supply current e i - room -0.002 -1 - -1 - full - -7.5 - -5 - ground current e i gnd full -0.002 -1.5 - -1 -
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 5 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a (single supply 5 v) parameter symbol test conditions unless otherwise specified v+ = 5 v, v- = 0 v v in = 2.4 v, 0.8 v f temp. b typ. c a suffix limits -55 c to +125 c d suffix limits -40 c to +85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - - 5 - 5 v drain-source ? on-resistance e r ds(on) v + = 4.5 v i s = 5 ma, v d = 1 v, 3.5 v room 36 - 50 - 50 ? full - - 88 - 75 on-resistance match ? between channels e ? r ds(on) i s = 10 ma, v d = 3.5 v room 0.5 - 1 - 1 dynamic characteristics turn-on time e t on r l = 300 ? , c l = 35 pf v s = 3.5 v, see figure 2 room 53 - 70 - 70 ns hot - - 90 - 80 turn-off time e t off room 34 - 50 - 50 hot - - 70 - 60 charge injection e qv g = 0 v, r g = 0 ? , c l = 10 nf room 3.3 - - - - pc power supplies positive supply current e i + v in = 0 v or 5 v full 10 - 200 - 100 a negative supply current e i - room -0.002 -1 - -1 - full - -7.5 - -5 - ground current e i gnd full -10 -200 - -100 -
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 6 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a mi nimum and the most positive a ma ximum, is used in this datash eet. e. guaranteed by design, not su bject to prod uction test. f. v in = input voltage to pe rform proper function. g. leakage parameters are guaranteed by worst ca se test conditions an d not subject to test. specifications a (single supply 3 v) parameter symbol test conditions unless otherwise specified v+ = 3 v, v- = 0 v v in = 0.4 v f temp. b typ. c a suffix limits -55 c to +125 c d suffix limits -40 c to +85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 0 3 0 3 v drain-source ? on-resistance r ds(on) v+ = 2.7 v, v- = 0 v i s = 5 ma, v d = 0.5 v, 2.2 v room 106 - 130 - 130 ? full - - 150 - 140 on-resistance match ? between channels e ? r ds(on) i s = 5 ma, v d = 2.2 v room 1 - 3 - 3 switch off ? leakage current g i s(off) v+ = 3.3, v- = 0 v v d = 1 v, 2 v, v s = 2 v, 1 v room - -1 1 -1 1 na full - -15 15 -10 10 i d(off) room - -1 1 -1 1 full - -15 15 -10 10 channel on ? leakage current g i d(on) v+ = 3.3 v, v- = 0 v v s = v d = 1 v, 2 v room - -1 1 -1 1 full - -15 15 -10 10 digital control input current, v in low e i il v in under test = 0.4 v full 0.005 -1.5 1.5 -1 1 a input current, v in high e i ih v in under test = 2.4 v full 0.005 -1.5 1.5 -1 1 dynamic characteristics turn-on time t on r l = 300 ? , c l = 35 pf v s = 1.5 v, see figure 2 room 141 - 200 - 200 ns full - - 220 - 210 turn-off time t off room 84 - 120 - 120 full - - 140 - 130 charge injection e qv g = 0 v, r g = 0 ? , c l = 10 nf room 2 - - - - pc off isolation e oirr r l = 50 ? , c l = 5 pf, f = 1 mhz room 68 - - - - db channel-to-channel crosstalk e x talk room 107 - - - - source off capacitance e c s(off) f = 1 mhz room 6 - - - - pf drain off capacitance e c d(off) room 7 - - - - channel on capacitance e c d(on) room 15 - - - -
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 7 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) r ds(on) vs. analog voltage and temperature r ds(on) vs. analog voltage r ds(on) vs. drain voltage and temperature r ds(on) vs. analog voltage leakage current vs. drain voltage (dual supply) 0 5 10 15 20 25 30 0123456789101112 r on - on-resistance ( ? ) v d - analog voltage (v) +125 c +85 c +25 c -40 c v+ = +12 v i s = 10 ma -55 c 0 10 20 30 40 50 60 70 80 90 0246810121416 r on - on-resistance ( ? ) v d - analog voltage (v) v+ = +3 v v+ = +12 v v+ = +5 v v+ = +16 v t a = 25 c i s = 10 ma 0 5 10 15 20 25 30 35 -5 -4 -3 -2 -1 0 1 2 3 4 5 r on - on-resistance ( ? ) v d - analog voltage (v) +125 c +85 c +25 c -40 c v = 5 v i s = 10 ma -55 c 6 8 10 12 14 16 18 20 22 24 -8-6-4-202468 r on -on-re s i s tance ( ) v d - analog voltage (v) t a = 25 c i s = 10 ma v = 8 v v = 5 v -40 -30 -20 -10 0 10 20 30 40 -5-4-3-2-1012345 leakage current (pa) v d - drain voltage (v), v s = -v d v+ = +5 v i d(on) i d(off) i s(off)
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 8 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) switching time vs. single supply capacitance vs. analog voltage (single supply) switching time vs. dual supply capacitance vs. analog voltage (dual supply) r ds(on) vs. analog voltage and temperature 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 2 4 6 8 10121416 switching speed (ns) v+ - positive supply voltage (v) single supply t on t off 0 2 4 6 8 10 12 14 16 18 20 0123456789101112 capacitance (pf) analog voltage (v) c d ( on ) , v+ = +12 v single supply c d(on) , v+ = +5 v c d(on) , v+ = +3 v c s(off) , v+ = +12 v c s(off) , v+ = +5 v c d(off) , v+ = +12 v c d(off) , v+ = +3 v c s(off) , v+ = +3 v c d(off) , v+ = +5 v 0 10 20 30 40 50 60 70 80 90 100 110 120 345678 switching speed (ns) v+/- - positive supply voltage (v) dual supply t on t off 0 2 4 6 8 10 12 14 16 18 20 -5 -4 -3 -2 -1 0 1 2 3 4 5 capacitance (pf) analog voltage (v) dual supply c d(on) , v = 5 v c d(off) , v = 5 v c s(off) , v = 5 v 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r on -on-re s i s tance ( ) v d - analog voltage (v) +125 c +85 c +25 c -40 c v+ = +5 v i s = 10 ma -55 c
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 9 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) input threshold vs. single supply voltage charge injection vs. analog voltage insertion loss, off isolation and crosstalk vs. frequency (single supply) supply current vs. temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 246810121416 v th - threshold (v) v+ - positive supply voltage (v) v ih v il 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -5-4-3-2-10123456789101112 q inj - charge injection (pc) v d - analog voltage (v) v = 5 v v+ = 12 v v+ = 5 v v+ = 3 v -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 100k 1m 10m 100m 1g loss, oirr, x talk (db) frequency (hz) insertion loss, -3db = 301 mhz v+ = +3 v v- = 0 v oirr x talk 0 10 20 30 40 50 60 70 80 90 100 -40-200 20406080100120 i+ - s upply current (na) temperature ( c) v+ = +5.5 v v- = 0 v in = 0 v
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 10 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schematic diagram (typical channel) fig. 1 test circuits fig. 2 - switching time fig. 3 - charge injection le v el shift/ dri v e v in s v+ gnd v- d 0 v logic input switch input switch output 3 v 50 % 0 v v o v s t r < 20 ns t f < 20 ns t off t on note: logic input wa v eform is in v erted for dg442. 50 % 80 % 80 % v s c l (includes fixture and stray capacitance) v- v+ in s d 3 v r l 1 k c l 35 pf v o v- gnd v+ off on off off on off v o v o in x in x q = v o x c l (dg441) (dg442) c l 1 nf in d v o v- v+ s 3 v r g v- gnd v+
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 11 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits fig. 4 - crosstalk fig. 5 - off isolation fig. 6 - source / drain capacitances c = 1 f tantalum in parallel with 0.01 f ceramic 50 d 1 v o r g = 50 s 1 v+ v- d 2 gnd v+ v- nc c c s 2 r l in 1 x ta l k isolation = 20 log v s v o 0 v, 2.4 v 0 v, 2.4 v v s in 2 c = rf b ypass s in r l d r g = 50 v s v o 0 v, 2.4 v off isolation = 20 log v s v o v+ v- gnd v - c c v+ s d in v+ v- gnd v+ v- c c 0 v, 2.4 v meter hp4192a impedance analyzer or equi v alent
dg441le, dg442le www.vishay.com vishay siliconix s16-0392-rev. a, 07-mar-16 12 document number: 76754 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 applications fig. 7 - power mosfet driver fi g. 8 - open loop sample-and-hold fig. 9 - precision-weighted resistor programmable-gain amplifier ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76754 . + 12 v + 12 v gnd v - v+ 0 = load off 1 = load on + 24 v i = 3a vn0300l, m dg442l + 12 v 10 k 150 r l in h = sample l = hold 0 v + 12 v v in v out c h sd in 1/4 dg442l + - + - + 12 v v v+ v - gnd dg441l or dg442l + - v in v out gain error is determined only b y the resistor tolerance. op amp offset and cmrr will limit ac- curacy of circuit. gain 1 a v = 1 gain 2 a v = 10 gain 3 a v = 20 gain 4 a v = 100 r 1 90 k r 2 5 k r 3 4 k r 4 1 k v out v in = r 1 + r 2 + r 3 + r 4 r 4 = 100 with sw 4 closed
all leads 0.101 mm 0.004 in e h c d e b a1 l  4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1  
  jedec part number: ms-012    dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037  0  8  0  8  ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
e 1 e q 1 a l a 1 e 1 b b 1 s c e a d 15 max 12345678 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71261 06-jul-01 www.vishay.com 1 
  

 
 dim min max min max a 3.81 5.08 0.150 0.200 a 1 0.38 1.27 0.015 0.050 b 0.38 0.51 0.015 0.020 b 1 0.89 1.65 0.035 0.065 c 0.20 0.30 0.008 0.012 d 18.93 21.33 0.745 0.840 e 7.62 8.26 0.300 0.325 e 1 5.59 7.11 0.220 0.280 e 1 2.29 2.79 0.090 0.110 e a 7.37 7.87 0.290 0.310 l 2.79 3.81 0.110 0.150 q 1 1.27 2.03 0.050 0.080 s 0.38 1.52 .015 0.060 ecn: s-03946?rev. d, 09-jul-01 dwg: 5482
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
pad pattern www.vishay.com vishay siliconix revision: 02-sep-11 1 document number: 63550 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for tssop-16 0.281 (7.15) recommended minimum pads dimensions in inches (mm) 0.171 (4.35) 0.055 (1.40) 0.012 (0.30) 0.026 (0.65) 0.014 (0.35) 0.193 (4.90)
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.


▲Up To Search▲   

 
Price & Availability of DG441LEDQ-GE3

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X