dual igbt module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 04/10 rev. 1 QID0660023 preliminary outline drawing and circuit diagram description: powerex dual igbt power module is configured as a half-bridge inverter. the aluminum silicon carbide (alsic) baseplate offers light weight module design. the power module is designed to operate reliably in harsh aerospace, military and other environments. the module is rated to operate over full temperature range of -55c to 125c. powerex is using high accelerated stress test (hast) to assure long term reliability of plastic power modules. features: ? class h hybrid screened to mil-prf-38534 requirements ? withstand hast ? light weight alsic baseplate ? low drive requirement ? ultra-fast free wheeling diode ? internal zener protection on gates ? high side collector sense pin for de-sat detection ? high power density ? aluminum nitride dbc ceramic applications: ? aerospace ? military ? motor control dimensions inches millimeters a 4.00 101.6 b 2.50 63.5 c 1.000.015 25.40.4 d 3.39 86.1 e 1.89 48.0 f 0.435 11.0 g 0.165 4.2 h #10-32 x 0.31 min. dimensions inches millimeters j 0.87 22.1 k 0.98 24.9 l 0.22 dia. 5.6 dia. m 0.53 13.5 n 0.09 min. 2.3 min. p 0.27 6.9 q #2-56 x 0.17 min. c2e1 e2 e2 g2 e1 g1 c1 c1 a f g g n p d e b k k j m m label m c l - (4 places) q - (5 places) c1 c1 e2 c2e1 g1 e1 18v 18v e2 g2 h - (3 places)
2 QID0660023 dual igbt module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 04/10 rev. 1 preliminary maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID0660023 units collector emitter voltage v ces 600 volts gate emitter voltage v ges 20 volts collector current i c 600 amperes peak collector current (1msec) i cm 1200* amperes diode forward current i f 600 amperes diode forward surge current (1msec) i fm 1200* amperes junction temperature t j 150 c storage temperature t stg -55 to 125 c mounting torque, terminal screws 26 in-lb mounting torque, control screws 4 in-lb mounting torque, mounting screws 26 in-lb module weight (typical) 270 grams v isolation v rms 2500 volts static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 10.0 a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 5.0 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v 1.7 2.2 volts i c = 300a, v ge = 15v 2.0 volts i c = 600a, v ge = 15v, t j = 125c 1.7 volts total gate charge q g v cc = 300v, i c = 600a, v gs = 15v 2400 nc diode forward voltage v fm i e = 600a, v gs = 0v 1.8 2.5 volts i e = 600a, v gs = 0v, t j = 125c 2.2 volts * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating.
3 QID0660023 dual igbt module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 04/10 rev. 1 preliminary dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 90 nf output capacitance c oes v ge = 0v, v ce = 10v 11.0 nf reverse transfer capacitance c res 3.6 nf turn-on delay time t d(on) 500 ns rise time t r v cc = 300v, i c = 600a, 300 ns turn-off delay time t d(off) v ge1 = v ge2 = 15v, 750 ns fall time t f r g = 4.2 , i e = 600a, 300 ns diode reverse recovery time t rr inductive load 250 ns diode reverse recovery charge q rr 8.7 c turn-on energy e on v cc = 350v, i c = 300a, r g = 5.0, 18.0 mj v ge = +15v/-7v, t j = 125c turn-off energy e off v cc = 350v, i c = 300a, r g = 10, 40.0 mj v ge = +15v/-7v, t j = 125c reverse recovery energy e rec v cc = 350v, i c = 300a 8.0 mj v ge = -7v, di/dt = -2000a/s thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case** r th(j-c) per igbt, half module, t j = 125c 0.063 0.075 c/w thermal resistance, junction to case** r th(j-c) per fwdi, half module, t j = 125c 0.100 0.120 c/w contact thermal resistance, case to fin r th(c-f) per module,thermal grease applied 0.020 c/w ** t c measurement point is just under the chip.
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