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12007 10A02 DA0617 UPD78 UR3060 CY7C1347 T529D 3C40UM
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  smak plastic-encapsulate diodes hd ak 60 features i o 2a vrrm 50v-1000v high surge current capability applications rectifier : from a to m x marking polarity: color band denotes cathode glass passivated chip us2x 1 h igh diode semiconductor smak notes: thermal resistance from junction to ambient and from junction to lead mounted on p.c.b. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copp er pad areas US2AA thru us2ma high efficient rectifier us item symbol unit conditions 2a 2b 2d 2f 2g 2j 2k 2m repetitive peak reverse voltage v rrm v 50 100 200 300 400 600 800 1000 average forward current i f(av) a 60hz half-sine wave, resistance 2.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave,1 cycle, ta=25 50 junction temperature t j storage temperature t stg -55 ~ +150 -55 ~ +150 load, tl= 110 max i mum r m s v rms v vo ltage 35 70 140 210 420 560 700 280 electrical characteristics (t a =25 unless otherwise specified) us item symbol unit test condition 1a 1b 1d 1f 1g 1j 1k 1m peak forward voltage v fm v i fm =2.0a 1.0 1.3 1.7 i rrm1 t a =25 5 peak reverse current i rrm2 a v rm =v rrm reverse recovery time t rr ns i f =0.5a i r =1a i rr =0.25a 50 75 r j-a thermal resistance(typical) r j-l /w between junction and ambient 80 1) between junction and terminal 20 1) 2a 2b 2d 2f 2g 2j 2k 2m t a =100 100
typical characteristics 2 h igh diode semiconductor v r d r l i f 0 if i r i rr t t rr i fig.5: diagram of circuit and testing wave form of reverse recovery time ifsm(a) number of cycles fig.2: maximum non-repetitive forward urge current 8.3ms single half sine wave jedec method 110100 0 10 20 30 40 50 fig.4 typical reverse characteristics voltage(%) ir(ua) tj=25 tj=100 0 20 40 60 80 100 0.1 1.0 10 100 1000 if(a) fig.3: typical forward characteristics 0.001 vf(v) 0.4 tj=25 pulse width=300us 1% duty cycle 0.01 1.0 10 0.6 0.8 1.0 1.2 1.4 us2a-d us2f-g us2j-m 0.2 0.1 0 50 fig.1: forward current derating curve io(a) 60hz resistive or inductive load p.c.b. mounted on 0.3"0.3"(8.0mm8.0mm) copper pad areas tl( ) 0 70 90 110 130 150 0.50 1.00 1.50 2.00 2.50 3.00 3.50
3 jshd jshd h igh diode semiconductor smak smak 0.106(2.70) 0.096(2.45) 4.12 1.8
4 reel taping specifications for surface mount devices-sma h igh diode semiconductor


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