VS-VSKT105.., vs-vskh105.., vs-v skl105.., vs-vskn105.. series www.vishay.com vishay semiconductors revision: 21-mar-14 1 document number: 94628 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 add-a-pak generation vii power modules thyristor/diode and thyristor/thyristor, 105 a mechanical description the add-a-pak generation vii, new generation of add-a-pak module, combine s the excellent thermal performances obtained by th e usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplifie d internal structure with minimized number of interfaces. features ? high voltage ? industrial standard package ? low thermal resistance ? ul approved file e78996 ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? excellent thermal performances obtained by the usage of exposed direct bonded copper substrate ? up to 1600 v ? high surge capability ? easy mounting on heatsink electrical description these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, ups and battery charger. ? product summary i t(av) or i f(av) 105 a type modules - thyr istor, standard add-a-pak major ratings and characteristics symbol characteristics values units i t(av) or i f(av) 85 c 105 a i o(rms) as ac switch 235 i tsm, ? i fsm 50 hz 2000 60 hz 2094 i 2 t 50 hz 20 ka 2 s 60 hz 18.26 i 2 ? t 200 ka 2 ? s v rrm range 400 to 1600 v t stg -40 to 130 c t j -40 to 130
VS-VSKT105.., vs-vskh105.., vs-v skl105.., vs-vskn105.. series www.vishay.com vishay semiconductors revision: 21-mar-14 2 document number: 94628 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications notes (1) i 2 t for time t x = i 2 ? t x ? t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7 % x ? x i av < i < ? x i av (4) i > ? x i av voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v drm , maximum repetitive peak off-state voltage, gate open circuit v i rrm, i drm at 130 c ma vs-vsk.105 04 400 500 400 20 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 on-state conduction parameter symbol test conditions values units maximum average on-state current (thyristors) i t(av) 180 conduction, ha lf sine wave, ? t c = 85 c 105 a maximum average forward current (diodes) i f(av) maximum continuous rms on-state current, ? as ac switch i o(rms) 235 maximum peak, one-cycle non-repetitive on-state or forward current i tsm or i fsm t = 10 ms no voltage ? reapplied sinusoidal ? half wave, ? initial t j = t j maximum 2000 t = 8.3 ms 2094 t = 10 ms 100 % v rrm ? reapplied 1682 t = 8.3 ms 1760 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied initial t j = t j maximum 20 ka 2 s t = 8.3 ms 18.26 t = 10 ms 100 % v rrm ? reapplied 14.14 t = 8.3 ms 12.91 maximum i 2 ? t for fusing i 2 ? t (1) t = 0.1 ms to 10 ms, no voltage reapplied ? t j = t j maximum 200 ka 2 ? s maximum value or threshold voltage v t(to) (2) low level (3) t j = t j maximum 0.98 v high level (4) 1.12 maximum value of on-state ? slope resistance r t (2) low level (3) t j = t j maximum 2.7 m ? high level (4) 2.34 maximum peak on-state or forward voltage v tm i tm = ? x i t(av) t j = 25 c 1.8 v v fm i fm = ? x i f(av) maximum non-re petitive rate of rise of ? turned on current di/dt t j = 25 c, from 0.67 v drm , ? i tm = ? x i t(av) , i g = 500 ma, t r < 0.5 s, t p > 6 s 150 a/s maximum holding current i h t j = 25 c, anode supply = 6 v, ? resistive load, gate open circuit 250 ma maximum latching current i l t j = 25 c, anode supply = 6 v, resistive load 400 or i (rms) i (rms)
VS-VSKT105.., vs-vskh105.., vs-v skl105.., vs-vskn105.. series www.vishay.com vishay semiconductors revision: 21-mar-14 3 document number: 94628 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm 12 w maximum average gate power p g(av) 3 maximum peak gate current i gm 3a maximum peak negative gate voltage - v gm 10 v maximum gate voltage required to trigger v gt t j = -40 c anode supply = 6 v ? resistive load 4.0 t j = 25 c 2.5 t j = 125 c 1.7 maximum gate current required to trigger i gt t j = -40 c anode supply = 6 v ? resistive load 270 ma t j = 25 c 150 t j = 125 c 80 maximum gate voltage th at will not trigger v gd t j = 125 c, rated v drm applied 0.25 v maximum gate current th at will not trigger i gd t j = 125 c, rated v drm applied 6 ma blocking parameter symbol test conditions values units maximum peak reverse and off-state ? leakage current at v rrm , v drm i rrm, i drm t j = 130 c, gate open circuit 20 ma maximum rms insulation voltage v ins 50 hz 3000 (1 min) 3600 (1 s) v maximum critical rate of rise of off-state voltage dv/dt t j = 130 c, linear to 0.67 v drm 1000 v/s thermal and mechanical specifications parameter symbol test conditions values units junction operating temperature range t j -40 to 130 c storage temperature range t stg maximum internal th ermal resistance, ? junction to case per leg r thjc dc operation 0.22 c/w typical thermal resistance, ? case to heatsink per module r thcs mounting surface flat, smooth and greased 0.1 mounting torque 10 % to heatsink a mounting compound is recommended and the torque should be re checked after a period of 3 hours to allow for the spread of the compound. 4 nm busbar 3 approximate weight 75 g 2.7 oz. case style jedec ? aap gen vii (to-240aa) ? r conduction per junction devices sine half wave conduction rectangular wave conduction units 180 120 90 60 30 180 120 90 60 30 vsk.105.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 c/w
VS-VSKT105.., vs-vskh105.., vs-v skl105.., vs-vskn105.. series www.vishay.com vishay semiconductors revision: 21-mar-14 4 document number: 94628 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current average on-state current (a) maximum allowable case temperature (c) 0 20406080100120 70 80 90 100 110 120 130 180 120 90 60 30 rthjc (dc) = 0.22c/w 0 20406080100120140160180 70 80 90 100 110 120 130 180 120 90 60 30 dc rthjc (dc) = 0.22c/w average on-state current (a) maximum allowable case temperature (c) average on-state current (a) maximum average on-state power loss (w) 020406080100120 0 20 40 60 80 100 120 140 160 180 200 180 120 90 60 30 rms limit per leg, tj = 130c average on-state current (a) maximum average on-state power loss (w) 0 20406080100120140160180 0 20 40 60 80 100 120 140 160 180 200 220 240 260 180 120 90 60 30 rms limit dc per leg, tj = 130c peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 110100 800 1000 1200 1400 1600 1800 at any rated load condition and with rated vrrm applied following surge initial tj = tj max @ 60 hz 0.0083 s @ 50 hz 0.0100s per leg peak half sine wave on-state current (a) pulse train duration (s) 0.01 0.1 1 800 1000 1200 1400 1600 1800 2000 maximum non-repetitive surge current versus pulse train duration. control initial tj = 130c no voltage reapplied rated vrrm reapplied per leg of conduction may not be maintained.
VS-VSKT105.., vs-vskh105.., vs-v skl105.., vs-vskn105.. series www.vishay.com vishay semiconductors revision: 21-mar-14 5 document number: 94628 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - on-state powe r loss characteristics fig. 8 - on-state powe r loss characteristics fig. 9 - on-state powe r loss characteristics total rms output current (a) maximum total on-state power loss (w) maximum allowable ambient temperature (c) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 2c/w 0 40 80 120 160 200 240 0 50 100 150 200 250 300 350 400 180 120 90 60 30 vsk.105 series per module tj = 130c total output current (a) maximum total power loss (w) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 2 c/w maximum allowable ambient temperature (c) 0 40 80 120 160 200 0 100 200 300 400 500 600 700 180 (sine) 180 (rect) 2 x vsk.105 series single phase bridge connected tj = 130c total output current (a) maximum allowable ambient temperature (c) maximum total power loss (w) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.5 c/w 1 c/w 0 40 80 120 160 200 240 0 100 200 300 400 500 600 700 800 900 120 (rect) 3 x vsk.105 series three phase bridge connected tj = 130c
VS-VSKT105.., vs-vskh105.., vs-v skl105.., vs-vskn105.. series www.vishay.com vishay semiconductors revision: 21-mar-14 6 document number: 94628 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - on-state voltage drop characteristics fig. 11 - thermal impedance z thjc characteristics fig. 12 - gate characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100 1000 tj = 25c tj = 130c per leg square wave pulse duration (s) transient thermal impedance z thjc (c/w) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 steady state value rthjc = 0.22 c/w (dc operation) per leg 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) (4) (3) (2) (1) tj = - 40 c tj = 2 5 c tj = 1 2 5 c a)recommended load line for b)recommended load line for vgd igd frequenc y limited by pg(av) (1) pgm = 200 w, t p = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% rated di/dt: 15 v, 40 ohms tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 ohms tr = 0.5 s, tp >= 6 s rectangular gate pulse irk.105.. series instantaneous gate voltage (v) instantaneous gate current (a) vsk.
VS-VSKT105.., vs-vskh105.., vs-v skl105.., vs-vskn105.. series www.vishay.com vishay semiconductors revision: 21-mar-14 7 document number: 94628 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration circuit description circuit configuration code circuit drawing two scrs doubler circuit t scr/diode doubler circuit, positive control h scr/diode doubler circuit, negative control l scr/diode common anodes n links to related documents dimensions www.vishay.com/doc?95368 2 - module type 1 - vishay semiconductors product 3 4 - current code (105 a) 5 - voltage code (see voltage ratings table) device code 2 1 4 3 5 k vs-vs t 105 / 16 - circuit configuration (see circuit configuration table) + - k1 (5) k2 (7) g2 (6) g1 (4) ~ (1) (2) (3) vskt 1 2 3 4 5 7 6 + - k1 (5) g1 (4) ~ (1) (2) (3) vskh 1 2 3 4 5 + - k2 (7) g2 (6) ~ (1) (2) (3) vskl 1 2 3 7 6 + + k1 (5) g1 (4) - (1) (2) (3) vskn 1 2 3 4 5
document number: 95368 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-nov-08 1 add-a-pak generation vii - thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 35 ref. 30 0.5 (1.18 0.020) 29 0.5 (1 0.020) viti m5 x 0.8 screws m5 x 0.8 18 (0.7) ref. 15.5 0.5 (0.6 0.020) fast-on tab 2.8 x 0.8 (0.110 x 0.03) 6.7 0.3 (0.26 0.012) 30 1 (1.18 0.039) 24 0.5 (1 0.020) 1 2 3 4 5 7 6 80 0.3 (3.15 0.012) 92 0.75 (3.6 0.030) 20 0.5 (0.79 0.020) 20 0.5 (0.79 0.020) 15 0.5 (0.59 0.020) 22.6 0.2 (0.89 0.008) 6.3 0.2 (0.248 0.008) 5.8 0.25 (0.228 0.010) 4 0.2 (0.157 0.008)
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