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iam-91563 0.8C6 ghz 3v downconverter data sheet features ? lead-free option available ? +0 dbm input ip 3 at .9 ghz ? single +3v supply ? 8.5 db ssb noise figure at .9 ghz ? 9.0 db conversion gain at .9 ghz ? ultra-miniature package applications ? downconverter for pcs, phs, ism, wll, and other wireless applications description avagos iam-9 563 is an economical 3v gaas mmic mixer used for frequency down-conversion. rf frequency cover - age is from 0.8 to 6 ghz and if coverage is from 50 to 700 mhz. packaged in the sot-363 package, this 4.0 sq. mm. package requires half the board space of a sot- 43 and only 5% the board space of an so -8 package. at .9 ghz, the iam-9563 provides 9 db of conversion gain, thus eliminating an rf or if gain stage normally needed with a lossy mixer. lo drive power is nominally only -5 dbm, eliminating an lo bufer amplifer. the 8.5 db noise fgure is low enough to allow the system to use a low cost lna. the -6 dbm input ip 3 provides adequate system linearity for most commercial applications, but is adjustable to 0 dbm. the circuit uses gaas phemt technology with proven reli - ability, and uniformity. the mmic consists of a cascode fet structure that provides unbalanced gm modulation type mixing. an on-chip lo bufer amp drives the mixer while bias circuitry allows a single +3v supply (through a choked if port). the lo port is internally matched to 50 f. the rf and if ports are high impedance and require external matching networks. surface mount package: sot-363 (sc-70) mga-86563 pkg pin connections and package marking if and v d gnd 91 lo gnd rf 1 2 3 6 5 4 source bypass note: . package marking provides orientation and identifcation. lo 1 source bypass 4 rf 3 ground 2, 5 if and v d 6 simplifed schematic attention: observe precautions for handling electrostatic sensitive devices. esd human body model (class 0) refer to avago application note a004r: electrostatic discharge damage and control.
thermal resistance [2] : ch-c = 30c/w notes: . permanent damage may occur if any of these limits are exceeded. . tc = 5c (tc is defned to be the temperature at the package pins where contact is made to the circuit board). iam-91563 electrical specifcations, t c = 25c, v d = 3 v symbol parameters and test conditions units min. typ. max. std dev [2] g test gain in test circuit [] rf= 890 mhz, if= 50 mhz db 4.0 9.0 nf test noise figure in test circuit [] rf= 890 mhz, if= 50 mhz db 8.5 .0 i d device current ma 6.0 9.0 .0 nf noise figure (rf & if with external matching, f = 0.9 ghz db 7.0 if= 50 mhz, lo power=-5 dbm) f = .9 ghz 8.5 0.5 f = .4 ghz .0 f = 4.0 ghz 6.5 f = 6.0 ghz 8.0 g c conversion gain (rf and if with external matching, f = 0.9 ghz db .0 if= 50 mhz, lo power=-5 dbm) f = .9 ghz 9.0 .5 f = .4 ghz 7.7 f = 4.0 ghz 4.6 f = 6.0 ghz .7 p db output power @ db compression (rf and if with f = 0.9 ghz dbm -6.7 external matching, if= 50 mhz, lo power =-5 dbm) f = .9 ghz -8.0 .3 f = .4 ghz -8.7 f = 4.0 ghz -5.0 f = 6.0 ghz -7.8 rl rf rf port return loss f = 0.5 - 6.0 ghz db -.7 0. rl lo lo port return loss f = 0.5 - 6.0 ghz db -9.4 0.3 rl if if port return loss f = 50 - 700 mhz db -3.7 0. ip 3 input third order intercept point rf = .9 ghz, if = 50 mhz dbm -6.0 .3 i d = 9.0 ma, lo power = -5 dbm ip 3 input third order intercept point rf = .9 ghz, if = 50 mhz dbm 0 . i d = 5 ma, lo power = - dbm isol l-r lo-rf isolation rf = .9 ghz db 8 isol r-i rf-if isolation (no match) db isol r-i lo-if isolation (no match) db 4 notes: . guaranteed specifcations are 00% tested in the circuit in figure 8 in the applications information section. . standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specifcation. iam-91563 absolute maximum ratings absolute symbol parameter units maximum [1] v d device voltage, rf output to ground v 6.0 v rf, v lo rf voltage or lo voltage to ground v +0.5, -.0 p in cw rf input power dbm +3 t ch channel temperature c 50 t stg storage temperature c -65 to 50
3 iam-91563 typical performance, t c = 25c, v d = 3.0 v, rf=1890 mhz, lo = -5 dbm, if = 250 mhz, unless otherwise stated. 0 3 4 5 1 2 6 0 3 4 5 1 2 6 0 3 4 5 1 2 6 f r e q u e n c y ( g h z ) f r e q u e n c y ( g h z ) f i g u r e 1 . a v a i l a b l e c o n v e r s i o n g a i n v s . f r e q u e n c y a n d t e m p e r a t u r e . f i g u r e 2 . n o i s e f i g u r e ( i n t o 5 0 ) v s . f r e q u e n c y a n d t e m p e r a t u r e . t a = + 8 5 c t a = + 2 5 c t a = ? 4 0 c 0 2 4 6 8 1 2 1 0 g a i n ( d b ) 6 8 1 0 1 2 1 4 2 0 1 8 1 6 n o i s e f i g u r e ( d b ) f r e q u e n c y ( g h z ) f i g u r e 3 . o u t p u t p o w e r ( @ 1 d b c o m p r e s s i o n ) v s . f r e q u e n c y a n d t e m p e r a t u r e . - 2 0 - 1 8 - 1 6 - 1 4 - 1 2 - 4 - 6 - 8 - 1 0 p 1 d b ( d b m ) t a = + 8 5 c t a = + 2 5 c t a = ? 4 0 c t a = + 8 5 c t a = + 2 5 c t a = ? 4 0 c 0 3 4 5 1 2 6 0 3 4 5 1 2 6 0 3 4 5 1 2 6 0 2 4 6 8 1 2 1 0 g a i n ( d b ) 6 8 1 0 1 2 1 4 2 0 1 8 1 6 n o i s e f i g u r e ( d b ) f r e q u e n c y ( g h z ) f r e q u e n c y ( g h z ) f i g u r e 4 . a v a i l a b l e c o n v e r s i o n g a i n v s . f r e q u e n c y a n d v o l t a g e . f i g u r e 5 . n o i s e f i g u r e ( i n t o 5 0 ) v s . f r e q u e n c y a n d s u p p l y v o l t a g e . f r e q u e n c y ( g h z ) f i g u r e 6 . o u t p u t p o w e r ( @ 1 d b c o m p r e s s i o n ) v s . f r e q u e n c y a n d v o l t a g e . - 2 0 - 1 8 - 1 6 - 1 4 - 1 2 - 4 - 6 - 8 - 1 0 p 1 d b ( d b m ) v d = 3 . 3 v v d = 3 . 0 v v d = 2 . 7 v v d = 3 . 3 v v d = 3 . 0 v v d = 2 . 7 v v d = 3 . 3 v v d = 3 . 0 v v d = 2 . 7 v 0 3 4 5 1 2 6 0 3 4 5 1 2 0 3 0 0 4 0 0 5 0 0 1 0 0 2 0 0 6 0 0 7 0 0 - 1 0 - 9 - 8 - 7 - 6 - 5 - 4 - 3 0 - 1 - 2 r e t u r n l o s s ( d b ) 0 2 4 8 6 1 2 1 0 d e v i c e c u r r e n t ( m a ) f r e q u e n c y ( g h z ) s u p p l y v o l t a g e ( v ) f i g u r e 7 . r f , l o , a n d i f r e t u r n l o s s v s . f r e q u e n c y . f i g u r e 8 . d e v i c e c u r r e n t v s . s u p p l y v o l t a g e a n d t e m p e r a t u r e . i f f r e q u e n c y ( m h z ) f i g u r e 9 . s s b n o i s e f i g u r e v s . f r e q u e n c y a n d s u p p l y v o l t a g e . 2 4 6 8 1 2 1 0 s s b n o i s e f i g u r e ( d b ) t a = + 8 5 c t a = + 2 5 c t a = - 4 0 c v d = 3 . 3 v v d = 3 . 0 v v d = 2 . 7 v l o r f i f
4 iam-91563 typical performance, t c = 25c, v d = 3.0 v, rf=1890 mhz, lo = -5 dbm, if = 250 mhz, unless otherwise stated. 0 3 0 0 4 0 0 5 0 0 1 0 0 2 0 0 6 0 0 7 0 0 i f f r e q u e n c y ( m h z ) f i g u r e 1 2 . c o n v e r s i o n g a i n v s . f r e q u e n c y a n d t e m p e r a t u r e . 2 4 6 8 1 2 1 0 c o n v e r s i o n g a i n ( d b ) t a = + 8 5 c t a = + 2 5 c t a = - 4 0 c 0 3 0 0 4 0 0 5 0 0 1 0 0 2 0 0 6 0 0 7 0 0 i f f r e q u e n c y ( m h z ) f i g u r e 1 0 . s s b n o i s e f i g u r e v s . f r e q u e n c y a n d t e m p e r a t u r e . - 1 0 - 7 - 6 - 5 - 9 - 8 - 4 - 3 - 2 - 1 l o p o w e r ( d b m ) f i g u r e 1 3 . a v a i l a b l e c o n v e r s i o n g a i n a n d n o i s e f i g u r e v s . l o d r i v e p o w e r . 2 4 6 8 1 2 1 0 s s b n o i s e f i g u r e ( d b ) 4 6 8 1 0 1 4 1 2 c o n v e r s i o n g a i n a n d n o i s e f i g u r e ( d b ) t a = + 8 5 c t a = + 2 5 c t a = - 4 0 c 0 3 0 0 4 0 0 5 0 0 1 0 0 2 0 0 6 0 0 7 0 0 i f f r e q u e n c y ( m h z ) f i g u r e 1 1 . c o n v e r s i o n g a i n v s . f r e q u e n c y a n d s u p p l y v o l t a g e . 2 4 6 8 1 2 1 0 c o n v e r s i o n g a i n ( d b ) t a = 3 . 3 v t a = 3 . 0 v t a = 2 . 7 v - 1 0 - 7 - 6 - 5 - 9 - 8 - 4 - 3 - 2 - 1 l o p o w e r ( d b m ) f i g u r e 1 4 . o n e d b c o m p r e s s i o n a n d i n p u t t h i r d o r d e r i n t e r c e p t v s . l o d r i v e p o w e r . - 1 0 - 8 - 6 - 4 0 - 2 p 1 d b a n d i n p u t i p 3 ( d b m ) 0 3 4 5 1 2 6 - 2 0 - 1 8 - 1 6 - 1 4 - 1 2 - 1 0 - 8 - 6 0 - 2 - 4 i s o l a t i o n ( d b , n o m a t c h ) r f f r e q u e n c y ( g h z ) f i g u r e 1 5 . i s o l a t i o n ( l o - r f , r f - i f , l o - i f ) v s . f r e q u e n c y w i t h n o r f a n d i f m a t c h i n g n e t w o r k s . 0 3 4 5 1 2 6 - 4 0 - 3 6 - 3 2 - 2 8 - 2 4 - 2 0 - 1 6 - 1 2 0 - 4 - 8 i s o l a t i o n ( d b ) r f f r e q u e n c y ( g h z ) f i g u r e 1 6 . i s o l a t i o n ( r f - l o , r f - i f , l o - i f ) v s . f r e q u e n c y w i t h r f a n d i f m a t c h i n g n e t w o r k s . g a i n n f i p 3 p 1 d b r f - i f l o - i f l o - r f r f - l o r f - i f l o - i f
5 iam-91563 typical refection coefcients, t c =25c, z o = 50 ?, v d =3 v frequency (ghz) rf (mag) rf (ang) lo (mag) lo (ang) if (mag) if (ang) 0. 0.43 - 0.64 -8 0. 0.39 -6 0.63 -9 0.3 0.39 -8 0.63 -0 0.4 0.39 -9 0.63 -0 0.5 0.39 -0 0.6 - 0.6 0.39 - 0.6 - 0.7 0.40 -4 0.6 -3 0.8 0.9 -8 0.39 -4 0.9 0.9 - 0.39 -6 0.9 -3 0.38 -7 . 0.9 -5 0.39 -7 . 0.9 -8 0.39 -9 .3 0.88 -9 0.40 - .4 0.87 -3 0.39 - .5 0.85 -33 0.39 -4 .6 0.84 -34 0.39 -5 .7 0.83 -35 0.39 -6 .8 0.8 -37 0.39 -7 .9 0.8 -37 0.38 -9 0.8 -39 0.39 -9 . 0.8 -40 0.38 -3 . 0.8 -4 0.38 -3 .3 0.8 -4 0.37 -3 .4 0.8 -44 0.37 -33 .5 0.80 -45 0.36 -34 .6 0.80 -45 0.36 -35 .7 0.8 -46 0.35 -36 .8 0.8 -48 0.35 -36 .9 0.8 -50 0.34 -37 3 0.8 -5 0.34 -37 3. 0.83 -53 0.33 -38 3. 0.83 -55 0.33 -39 3.3 0.83 -56 0.3 -39 3.4 0.85 -59 0.3 -40 3.5 0.86 -6 0.3 -40 3.6 0.87 -64 0.3 -4 3.7 0.85 -67 0.3 -4 3.8 0.83 -7 0.30 -45 3.9 0.83 -7 0.30 -43 4 0.8 -73 0.9 -46 4. 0.83 -76 0.9 -45 4. 0.83 -79 0.8 -47 4.3 0.84 -8 0.9 -48 4.4 0.84 -85 0.7 -49 4.5 0.84 -87 0.8 -50 4.6 0.85 -9 0.6 -5 4.7 0.84 -95 0.8 -5 4.8 0.85 -97 0.5 -5 4.9 0.85 -00 0.7 -54 5 0.85 -03 0.5 -54 5. 0.86 -06 0.7 -57 5. 0.85 -08 0.5 -56 5.3 0.84 -3 0.7 -58 5.4 0.84 -5 0.5 -58 5.5 0.84 -7 0.7 -6 5.6 0.83 - 0.5 -6 5.7 0.83 -3 0.7 -64 5.8 0.8 -5 0.5 -65 5.9 0.8 -8 0.6 -67 6 0.80 -30 0.4 -65
6 v d if 250 mhz 500 pf 4.7 pf 68 nh z = 50 z = 50 z = 110 i=10.4 mm 0.5 pf 220 nh 100 pf (2) lo 1640 mhz rf 1890 mhz 91 if fet 2 lo rf fet 1 iam-91563 applications information introduction the iam-9 563 is a miniature downconverter developed for use in superheterodyne receivers for commercial wire - less applications with rf bands from 800 mhz to 6 ghz. operating from only 3 volts, the iam-9 563 is an excellent choice for use in low current applications such as: .9 ghz personal communication systems (pcs) & personal handy system (phs), ghz digital european cordless telephone (dect), and 800 mhz cellular telephones (e.g., gsm, nadc, jdc). combined with avagos other rfics and discrete components housed in the same ultra-miniature sot-363 package, the iam-9 563 also provides fexible, building- block solutions for wlans and wireless datacomm such as pcmcia rf modems as well as many industrial, sci - entifc and medical (ism) systems operating at 900 mhz, .5 ghz, and 5.8 ghz. the iam-9 563 is a 3-port, downconverting rfic mixer of the cascode (common source - common gate) type that uses a low level (-5 dbm) local oscillator (lo) to convert an rf signal in the 800 mhz to 6 ghz range to an if between 50 and 700 mhz. the basic mixing function takes place in a cascode connected pair of fets as shown in figure 7. using a minimum of external components with a standard bias of 3 volts/9 ma and lo power of - 5 dbm, the iam-9 563 mixer achieves an rf to if conversion gain of 9 db at .9 ghz with a noise fgure of 8.5 db and an input third order inter - cept point of - 6 dbm. lo-to-if isolation is greater than 35 db. setting the bias for the higher linearity/higher current mode (approximately 6 ma) along with an lo drive level of - dbm will boost the input ip 3 to approximately 0 dbm. test circuit the circuit shown in figure 8 is used for 00% rf and dc testing. the test circuit is impedance matched for an rf of 890 mhz and an if of 50 mhz. the lo is set at 640 mhz and -5 dbm for low side conversion. (high side conversion with an lo of 40 mhz would produce similar performance.) the rf choke at the if port is used to provide dc bias. tests in this cir - cuit are used to guarantee the g test , nf test , and device current (i d ) parameters shown in the table of electrical specifcations. figure 17. cascode fet mixer. the received rf signal is connected to the gate of fet and the lo is applied to the gate of fet . the purpose of fet is to vary the transconductance of fet over a highly nonlinear region at the rate of the lo frequency. this pro - duces the nonlinearity required for frequency mixing to take place. this type of mixer is also known as a transcon - ductance mixer. the if is taken from the drain of fet . an advantage of the cascode type of design is the inher - ent isolation between the gates of the two fets which re - sults in very good lo-to-rf isolation. an integrated bufer amplifer between the lo input and the gate of fet not only increases the lo-rf isolation but also reduces the amount of lo input power required by the mixer. the iam-9 563 uses an innovative bias regulation circuit that realizes several benefts to the designer. first, the iam-9 563 operates with a single, positive device voltage from .5 to 5 volts with stable performance over a wide temperature range. second, a unique feature of the iam- 9 563 allows the device current to be easily increased by adding an external resistor to boost device current and increase linearity. figure 18. test circuit. specifcations and statistical parameters several categories of parameters appear within this data sheet. parameters may be described with values that are either minimum or maximum, typical, or standard devia - tions. the values for parameters are based on comprehensive product characterization data, in which automated mea - surements are made on of a minimum of 500 parts taken from 3 non-consecutive process lots of semiconductor wafers. the data derived from product characterization tends to be normally distributed, e.g., fts the standard bell curve. parameters considered to be the most important to system performance are bounded by minimum or maximum val - ues. for the iam - 9 563, these parameters are: conversion gain (g test ), noise figure (nf test ), and device current (i d ). each of these guaranteed parameters is 00% tested. values for most of the parameters in the table of electri - cal specifcations that are described by typical data are the mathematical mean ( ), of the normal distribution taken from the characterization data. for parameters where mea - surements or mathematical averaging may not be practical, such as the typical refection coefcients table or perfor - mance curves, the data represents a nominal part taken from the center of the characterization distribution. typi - cal values are intended to be used as a basis for electrical design.
7 to assist designers in optimizing not only the immedi - ate circuit using the iam-9 563, but to also optimize and evaluate trade-ofs that afect a complete wireless system, the standard deviation ( ) is provided for many of the elec - trical specifcations parameters (at 5) in addition to the mean. the standard deviation is a measure of the variabil - ity about the mean. it will be recalled that a normal distri - bution is completely described by the mean and standard deviation. standard statistics tables or calculations provide the prob - ability of a parameter falling between any two values, usually symmetrically located about the mean. referring to figure for example, the probability of a parameter being between is 68.3%; between is 95.4%; and between 3 is 99.7%. 68% 95% 99% parameter value mean ( ) (typical ) -3 -2 -1 +1 +2 +3 figure 19. normal distribution. phase reference planes the positions of the reference planes used to specify re - fection coefcients for this device are shown in figure 0. as seen in the illustration, the reference planes are located at the point where the package leads contact the test cir - cuit. c r test circuit reference planes figure 20. phase reference planes. rf layout an rf layout similar to the one in figure is suggested as a starting point for microstripline designs using the iam-9 563 mixer. this layout shows the capacitor for the source bypass pin and the optional resistor used to in - crease bias current. adequate grounding is important to obtain maximum pe r formance and to maintain stability. both of the ground pins of the mmic should be connect - ed to the rf groundplane on the backside of the pcb by means of plated through holes (vias) that are placed near the package terminals. as a minimum, one via should be located next to each of the ground pins to ensure good rf grounding. it is a good practice to use multiple vias to further minimize ground path inductance. figure 21. rf layout. it is recommended that the pcb pads for the ground pins not be connected together underneath the body of the package. pcb traces hidden under the package cannot be adequately inspected for smt solder quality. pcb material fr-4 or g- 0 printed circuit board materials are a good choice for most low cost wireless applications. typi - cal board thickness is 0.0 0 to 0.03 inches. thicknesses greater than 0.03 inch began to introduce excessive inductance in the ground vias. the width of the 50f mi - crostriplines on pc boards in this thickness range is also very convenient for mounting chip components such as the series inductor at the input or dc blocking and bypass capacitors. for applications using higher frequencies such as the 5.8 ghz ism band, the additional cost of ptfe/glass dielectric materials may be warranted to minimize transmission line loss at the mixers rf input. an additional consideration of using lower cost materials at higher frequencies is the degradation in the qs of transmission lines used for im - pedance matching. biasing the iam-9 563 is a voltage-biased device and is designed to operate in the normal mode from a single, +3 volt power supply with a typical current drain of only 9 ma. the internal current regulation circuit allows the mixer to be operated with voltages as high as +5 volts or as low as + .5 volt. the device current can be increased up to 0 ma by adding an external resistor from the source bypass pin to ground. this feature makes it possible to operate the iam-9 563 in the high power mode to achieve greater linearity. refer to the section titled high linearity mode for information on applications and performance when using this feature.
8 rf rf input c l if lo hp filter rf if lo lp filter rf if output if lo application guidelines several design considerations should be taken into ac - count to ensure that maximum performance is obtained from the iam -9 563 downconverter. the rf and if ports must be impedance matched at their respective frequen - cies to the circuits to which they are connected. this is typically 50 ohms when the mixer is used as a building block component in a 50-ohm system. these ports have been left untuned on the mmic to allow the mixer to be used over a wide range of rf and if bands. the lo port is already sufciently well matched (less than db of mis - match loss) for most applications. as with most mixers, appropriate flters must be placed at the rf port and if port such as in figure . the flter in front of the rf port eliminates interference from the im - age frequency and the if flter prevents rf and lo signal leakage into the if signal processing circuitry. it is advantageous to use a -element matching network of the series c, shunt l type as shown in figure 3 in - stead. there are two main reasons for this choice. the frst is to incorporate a high pass flter characteristic into the matching circuit. second, the series c, shunt l combina - tion will match the entire range of rf port impedances to 50 ? . most wireless communication bands are sufciently narrow that a single (mid-band) frequency approach to impedance matching is adequate. figure 22. image and if filters. additional design considerations relate to the use of high - er bias current where greater linearity is required, bypass - ing of the source bypass pin, bias injection, and dc block - ing and bypassing. each of these design factors will be discussed in greater detail in the following sections. rf port a well matched rf port is especially important to maxi - mize the conversion gain of the iam-9 563 mixer. match - ing is also necessary to realize the specifed noise fgure and rf-to-lo isolation. the amount the conversion gain can be increased by impedance matching is equal to the mismatch loss at the rf port. the impedance of the rf port is characterized by the measured refection coef - cients shown in typical refection coefcients table. the maximum mismatch gain that results from eliminating the mismatch loss is expressed in db as a function of the refection coefcient as: figure 23. rf input hpf matching. impedance matching can be accomplished with lumped element components, transmission lines, or a combina - tion of both. the use of surface mount inductors and ca - pacitors is convenient for lower frequencies to minimize printed circuit board space. the use of high impedance transmission lines works well for higher frequencies where lumped element inductors may have excessive parasitics and/or self-resonances. if other types of matching networks are used, it should be noted that while the rf input terminal of the iam-9 563 is at ground potential, it should not be used as a current sink. if the input is connected directly to a preceding stage that has a voltage present, a dc blocking capacitor should be used. if port the iam-9 563 can be used for downconvesion to inter - mediate frequencies in the 50 to 700 mhz range. similar to the rf port, the refection coefcient at the if is fairly high and equation can be used to predict a mismatch gain of up to . db by impedance matching. a well matched if port will also provide the optimum output power and lo-to-if isolation. refection coefcients for the if port are shown in the typical refection coefcients table. the if port impedance matching network should be of the low pass flter type to refect rf and lo power back into the mixer while allowing the if to pass through. the shunt c, series l type of network in figure 4 is a very practical choice that will meet the low pass flter require - ment while matching any if impedances over the 50 - 700 mhz range to 50 ohms. figure 24. if output lpf matching. g r f , m m = 1 0 l o g 1 0 1 1 ? r f 2 ( 1 ) for wireless bands in the 800 mhz to 6 ghz range, the magnitude of the refection coefcient of the rf port var - ies from 0.9 to 0.80, which corresponds to a mismatch gain of 7.6 to 4.4 db. the impedance of the rf port is capacitive, and for fre - quencies from 800 mhz to .4 ghz, falls very near the r= circle of a smith chart. while these impedances could be easily matched to 50 ohms with a simple series inductor,
9 rf if lo rfc bypass capacitor v d if output figure 26. available conversion gain and ssb noise figure vs. device current (source resistor). the dc bias is also applied to the mixer through the if port. figure 5 shows how an inductor (rfc) is used to isolate the if from the dc supply. the bias line is bypassed to ground with a capacitor to keep rf of of the dc supply lines and to prevent dips or peaks in the response of the mixer. figure 25. bias connection. lo port the lo input port is internally matched to 50 f within a .: vswr over the entire operating frequency range. ad - ditional matching will normally not be needed. however, if desired, a small series inductor can be used to provide some improvement in the lo match and thus reduce the lo drive level requirement by up to 0.7 db. refection co - efcients for the lo port are shown in the table of typical refection coefcients. source bypass pin the source bypass pin should be rf bypassed to ground at both the rf and lo frequencies as well as the if. many capacitors with values large enough to adequately bypass lower intermediate frequencies contain parasitics that may have resonances in the rf band. it is often practical to use two capacitors in parallel for this purpose instead of one. a small value, high quality capacitor is used to by - pass the rf/lo frequencies and a large value capacitor for the if. when biased in the high linearity mode, a resistor is added from the source bypass pin to ground. high linearity mode the iam-9 563 has a feature that allows the user to place an external resistor from the source bypass pin to ground and increase the device current from a nominal 9 ma to as high as 0 ma. the additional current increases mixer linearity (ip 3 ) and output power(p db ). mixer performance at higher device current is shown in figures 6 and 7. figure 27. one db compression and input third order intercept point vs. de - vice current (resistor). as an example of improved linearity, the use of a 5 f re - sistor at the source bypass pin increases the device cur - rent to 4 ma. at .9 ghz, the input ip 3 is increased from -6.5 dbm to -3 dbm. increasing the lo drive level from -5 dbm to - dbm further increases the input ip 3 to 0 dbm. 7 1 3 1 5 1 7 9 1 1 1 9 4 6 8 1 0 1 4 1 2 c o n v e r s i o n g a i n a n d n f ( d b ) d e v i c e c u r r e n t ( m a ) f i g u r e 2 6 . a v a i l a b l e c o n v e r s i o n g a i n a n d s s b n o i s e f i g u r e v s . d e v i c e c u r r e n t ( s o u r c e r e s i s i t o r ) . 1 0 0 0 9 5 3 5 6 2 1 a p p r o x i m a t e r e s i s t o r v a l u e ( ) n f g a i n 7 1 3 1 5 1 7 9 1 1 1 9 1 0 0 0 9 5 3 5 6 2 1 - 1 0 - 8 - 6 - 4 0 - 2 p 1 d b a n d i n p u t i p 3 ( d b m ) d e v i c e c u r r e n t ( m a ) a p p r o x i m a t e r e s i s t o r v a l u e ( ) f i g u r e 2 7 . o n e d b c o m p r e s s i o n a n d i n p u t t h i r d o r d e r i n t e r c e p t p o i n t v s . d e v i c e c u r r e n t ( r e s i s t o r ) . i p 3 p 1 d b
0 if output rfc c4 c6 c5 c7 c1 l3 lo input rf input c2 l2 v d c3 91 l1 = 0 mli n a 1 c c b a 2 1 -2 b 0.5 0.5 0.2 -0.2 0.2 2 -0.5 -1 rf input c1 l a 1 c c b a 2 1 -2 b 0.5 0.5 0.2 -0.2 0.2 2 -0.5 -1 if output c2 l2 ries c - shunt l network (from the 50 ? source to rf ) will be used to match rf to 50 ? . addition of a 6.5 nh shunt inductance moves the impedance trajectory from point a to point b. the match to 50 ? is completed with a 0.6 pf series capacitance, c , that moves the match to point c, the center of the smith chart. application example the printed circuit layout in figure 8 is a general purpose layout that will accommodate components for using the iam -9 563 for rf inputs from 800 mhz to 6 ghz. this lay - out is a microstripline design (solid groundplane on the backside of the circuit board) with 50 f interfaces for the rf input, if output, and lo input. the circuit is fabricated on 0.03 -inch thick fr-4 dielectric material. plated through holes (vias) are used to bring the ground to the top side of the circuit where needed. multiple vias are used to reduce the inductance of the paths to ground. figure 28. pcb layout. 1.9 ghz design example to illustrate a design approach for using the iam-9 563, a pcs band downconverter with an rf of .9 ghz and if of 0 mhz is presented. the pcb layout above was used to assemble the mixer and verify performance. a schematic diagram of the .9 ghz circuit is shown in fig - ure 9. figure 29. schematic of example application circuit. at the rf input port, series capacitor c and transmission line mlin form the input matching network and high pass flter. (note: the pcb layout above has provision for an in - ductor, l , in series with mlin. inductor l is not used in this design.) referring to the table of refection coefcients, the rf input port rf = 0.8 ? 37 at .9 ghz. this point is plot - ted as point a on the smith chart in figure 30. for reasons previously discussed in the rf port section above, a se - figure 30. rf input impedance match. for this example, the shunt inductor was realized with the transmission line, mlin in figure 9 (z o = 90 ? , length = 0.35 in.). a high quality capacitor should be selected for c to minimize the efects of the capacitors parasitic in - ductance and resistance. series capacitor c also serves to block any dc that may be present at the output of the stage preceding the mixer. at the if output, the low pass flter and impedance match is formed by shunt capacitor c and series inductor l . refer - ring again to the table of refection coefcients, the if out - put port if = 0.64 -8 at 00 mhz, which is the frequency point closest to the desired if of 0 mhz. if is plotted as point a in figure 3 . figure 31. if input impedance match. r f i f + v l o i a m - 9 1
rf if +v c6 c5 c4 c2 c3 mun 1 l 1 c 1 c 7 l3 l2 rfc lo iam-91 adding a shunt capacitance (c ) of .3 pf brings the im - pedance to point b. the match to point c at the center of the chart is completed with a series inductance (l ) of 50 nh. although not necessary for many applications, the match at the lo port can be improved by the addition of series inductor l3 with a value of approximately 8 nh. design in - formation ( lo ) for matching the lo port is obtained from the table of refection coefcients. capacitor c7 is a dc block for the lo port. dc bias is applied to the iam -9 563 through the rfc at the if output pin. the power supply is bypassed to ground with capacitor c5 to keep rf, if, and lo signals of of the dc bias lines and to prevent gain dips or peaks in the re - sponse of the mixer. c4 is a dc blocking capacitor for the output. the values of the rf bypass capacitors and dc blocking capacitors that are not part of a impedance matching structure (i.e., c3 - c7) should be chosen to provide a small reactance (typically < 5 ohms) at the lowest frequency at the port for which they are used. the reactance of the rf choke (rfc) should be high (e.g., several hundred ohms) at the lowest if. the completed .9 ghz mixer from the design example above with all components and sma connectors in place is shown in figure 3 . again, l is not used and is replaced by a metal tab. the length of the shunt transmission line, mlin, is adjustable by moving the position of the short - ing tab between the line and the ground pad. provision is made for an additional bypass capacitor, c6, to be added to the bias line near the v d connection to eliminate un - wanted rf feedback through bias lines. when multiple bypass capacitors are used, consideration should be given to potential resonances. it is important to ensure that the capacitors, when combined with addi - tional parasitic ls and cs on the circuit board, do not form resonant circuits. the addition of a small value resistor in the bias supply line between bypass capacitors will often de-q the bias circuit and eliminate resonance efects. table summarizes the component values for the .9 ghz design. table 1. component values for 1.9 ghz downconverter. component value c 0.5 pf c 9 pf c3, c5, c7 00 pf c4 500 pf l (not used) l 00 nh l3 8. nh mlin zo=90 l = 0.4 in. rfc 30 nh the values shown in table may vary from those used above to describe the basic impedance matching ap - proach. the fnal component values take into consider - ation additional efects such as, the various line lengths between components, parasitics in components (e.g., the series inductance in c ), as well as other circuit parasitics. a cad program such as avago touchstone ? may be used to fully analyze and account for these circuit variables. figure 32. complete 1.9 ghz mixer. the following performance was measured for a .9 ghz circuit: measured results: conversion gain = 9.0 db lo-rf isolation = 7 db ssb noise figure = 8.5 db lo-if isolation = 34 db p db (output) = -8. db rf-if isolation = 3 db ip 3 (input) = -7 dbm operating conditions: rf frequency = .89 ghz lo drive level = -5 dbm lo frequency = .78 ghz dc power = 3.0v @ 9 ma if frequency = 0 mhz
220 nh 100 pf 0.5 pf 100 pf 500 pf 4.7 pf 110 ? , 3 mm 68 nh gc gn if rf 91 gnd lo vd lo 2200 mh z rf 2450 mh z if 250 mh z 3.3 nh 50 ? 50 ? 50 ? 0.026 0.07 9 0.01 8 0.03 9 dimensions in inches. 220 nh 100 pf 0.9 pf 220 pf 1000 pf 15 pf 10 nh 180 nh gc gn if rf 91 gnd lo vd lo 2200 mh z rf 2450 mh z if 250 mh z 50 ? 50 ? 50 ? measured results: conversion gain = 7.7 db lo-rf isolation = 6 db ssb noise figure = db lo-if isolation = 35 db db compression = -8.7 db rf-if isolation = 7 db ip3 (input) = -7 dbm operating conditions: rf frequency = .45 ghz lo drive level = -5 dbm if frequency = 50 mhz dc power = 3.0v @ 9 ma lo frequency = . ghz figure 34. 2.4 ghz ism band mixer. sot-363 pcb footprint a recommended pcb pad layout for the miniature sot- 363 (sc-70) package used by the iam-9 563 is shown in figure 35 (dimensions are in inches). this layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the high frequency rf performance of the iam- 9 563. the layout is shown with a nominal sot-363 pack - age footprint superimposed on the pcb pads. measured results: conversion gain = 0.6 db lo-rf isolation = db ssb noise figure = 7. db lo-if isolation = 33 db db compression = -7.0 db rf-if isolation = 7 db p3 (input) = -7 dbm operating conditions: rf frequency = 900 mhz lo drive level = -5 dbm if frequency = 80 mhz dc power = 3.0v @ 9 ma lo frequency = 980 mhz figure 33. 800-900 mhz cellular and ism band mixer. designs for other frequencies the same design methodology described above can be applied to other wireless frequency bands. design ex - amples and measurement results for the 900 mhz and .4 ghz bands are shown in figures 33 and 34. figure 35. recommended pcb pad layout for avagos sc70 6l/sot-363 products.
3 package dimensions outline 63 (sot-363/sc-70) note: for lead-free option, the part number will have the character g at the end. part number ordering information no. of part number devices container iam-9 563-tr 3000 7" reel iam-9 563-tr 0000 3" reel iam-9 563-blk 00 antistatic bag iam-9 563-trg 3000 7" reel iam-9 563-trg 0000 3" reel iam-9 563-blkg 00 antistatic bag e he d e a1 b a a2 q1 l c dimensions (mm) min. max. symbol 0.650 bcs .5 .80 .80 0.80 0.80 0.00 0.0 0.5 0.0 0.0 .35 .5 .40 .0 .00 0.0 0.40 0.30 0.0 0.30 e d he a a a q e b c l notes: . all dimensions are in mm. . dimensions are inclusive of plating. 3. dimensions are exclusive of mold flash & metal burr. 4. all specifications comply to eiaj sc70. 5. die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. package surface to be mirror finish.
tape dimensions and product orientation for outline 63 device orientation for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2008 avago technologies. all rights reserved. obsoletes 5989-4218en av02-1701en - december 9, 2008 p p 0 p 2 f w c d 1 d e a 0 10 max. t 1 (carrier tape thickness) t t (cover tape thickness ) 10 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d .40 0.0 .40 0.0 .0 0.0 4.00 0.0 .00 + 0.5 0.094 0.004 0.094 0.004 0.047 0.004 0.57 0.004 0.039 + 0.00 cavity diameter pitch position d p 0 e .55 0.0 4.00 0.0 .75 0.0 0.06 + 0.00 0.57 0.004 0.069 0.004 perforation width thicknes s w t 8.00 + 0.30 - 0.0 0.54 0.0 0.35 + 0.0 0.000 0.0008 carrier tape cavity to perforatio n (width direction) cavity to perforatio n (length direction) f p 3.50 0.05 .00 0.05 0.38 0.00 0.079 0.00 distance width tape thicknes s c t t 5.40 0.0 0.06 0.00 0.05 + 0.004 0.005 0.0004 cover tape u s e r f e e d d i r e c t i o n c o v e r t a p e c a r r i e r t a p e r e e l e n d v i e w 8 m m 4 m m t o p v i e w 9 1 9 1 9 1 9 1

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