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  lite-on dcc release lite-on technology corp. / optoelectronics no.90,chien 1 road, chung ho, new taipei city 23585, taiwan, r.o.c. tel: 886-2-2222-6181 fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto ir emitter and detectorproduct data sheetLTE-C216-P-W spec no.: ds50-2013-0034effective date: 07/15/2014revision: b bns-od-fc001/a4 bns-od-fc001/a4 bns-od-fc001/a4 bns-od-fc001/a4
1 / 7 part no. : lt e - c 216 - p - w bns - od - fc 002/a4 ir emitter and detector lt e - c 216 - p - w 1. description lit e - on offers a broad range of discrete infrared components for application such as remote control, ir wireless data transmission, security alarm & etc . customers need infrared solutions featuring high power, high speed and wide viewing ang els. the product line includes gaas 940nm ireds, algaas high speed 850nm ireds, pin photodiodes and phototransistors. photodiodes and phototransistors can be provided with a filter that reduces digital light noise in the sens or function, which enables a hi gh signal - to - noise ratio. 1 . 1. features ? meet rohs , green product . ? package in 8 mm carrier tape on 7" diameter reels. . ? compatible with automatic placement equipment. ? compatible with infrared reflow solder process. ? eia std package. ? peak wavelength p= 85 0 n m ? p ackage type 1206 . 1.2 . applications ? infrared emitter ? pcb mounted infrared sensor 2 . outline dimensions notes : 1. all dimensions are in millimeters (inches). 2. tolerance is 0. 1 mm (.0 04 ") unless otherwise noted. 3. specifications are s ubject to change without notice.
2 / 7 part no. : lt e - c 216 - p - w bns - od - fc 002/a4 ir emitter and detector lt e - c 216 - p - w 3. absolute maximum ratings at ta=25 parameter maximum rating unit power dissipation 100 mw peak forward current (300pps, 10s pulse) 80 0 ma dc forward current 6 0 ma reverse voltage 5 v operating temperature range - 40 c to + 85c storage temperature range - 55 c to + 100 c infrared sol dering condition 260c for 10 seconds max. suggestion ir reflow profile for pb free process :
3 / 7 part no. : lt e - c 216 - p - w bns - od - fc 002/a4 ir emitter and detector lt e - c 216 - p - w 4. electrical / optical characteristics at ta=25 parameter symbol min. typ. max. unit test condition radiant intensity i e 2.2 3.0 - mw/sr i f = 20m a peak emission wavelength peak - 850 - nm i f = 20ma spectral line half - width ? - 5 0 - nm i f = 20ma forward voltage v f - 1.4 1.8 v i f = 20ma reverse current i r - - 10 a v r = 5v rise/fall time tr/tf - 20 - ns 10%~90% viewing angle (see fig.6) 2 1/2 - 100 - deg. n ote : 1 . 1/2 is the off - axis angle at which the luminous intensity is half the axial luminous intensity. 2 . the dominant wavelength, d is derived from the cie chromaticity diagram and represents the single wavelength which defines the c olor of the device.
4 / 7 part no. : lt e - c 216 - p - w bns - od - fc 002/a4 ir emitter and detector lt e - c 216 - p - w 5 . typical electrical / optical characteristics curves (25 ambient temperature unless otherwise noted) value at if=20ma output power relative to 1.0 2.0 0 3.0 4.0 5.0 40 vs. forward current fig.5 relative radiant intensity foward current (ma) 20 0 80 60 100 100 80 60 40 20 0 0.5 1.0 950 850 750 70 60 50 40 30 20 relative radiant intensity wavelength (nm) fig.1 spectral distribution 10 forward current if (ma) ambient temperature fig.2 forward current vs. ambient temperature ta ( c) o 100 -40 0 -20 20 60 40 80 ambient temperature ta ( c) vs. ambient temperature fig.4 relative radiant intensity -20 output power relative to value at if=20ma 0.6 0.2 0 0.4 0.8 1.0 1.2 60 40 20 0 o 80 forward current (ma) 0 1.6 forward voltage fig.3 forward current vs. forward voltage (v) 1.2 0 2.8 2.4 2.0 value at if=20ma output power relative to 1.0 2.0 0 3.0 4.0 5.0 40 vs. forward current fig.5 relative radiant intensity foward current (ma) 20 0 80 60 100 relative radiant intensity fig.6 radiation diagram 0.6 0.5 0.3 0.1 0.2 0.4 0 20 10 o o o 80 o 90 o 70 60 o o 50 40 o o 30 o 0.9 0.7 0.8 1.0
5 / 7 part no. : lt e - c 216 - p - w bns - od - fc 002/a4 ir emitter and detector lt e - c 216 - p - w 6 . suggest soldering pad dimensions 7 . package dimensions of tape and reel note: all dimensions are in millimeters (inches).
6 / 7 part no. : lt e - c 216 - p - w bns - od - fc 002/a4 ir emitter and detector lt e - c 216 - p - w note: 1. all dimensions are in millimeters (inches). 2 . empty component pockets sealed with top cover tape. 3 . 7 inch reel - 3000 pieces per reel. 4. the maximum number of consecutive missin g lamps is two. 5 . in accordance with ansi/eia 481 - 1 - a - 1994 specifications. 8 . cautions 8 . 1. application the leds described here are intended to be used for ordinary electronic equipment (such as office equipment, communication equipment and household app lications).consult liteons sales in advance for information on applications in which exceptional reliability is required, particularly when the failure or malfunction of the leds may directly jeopardize life or health (suc h as in aviation, transportation, traffic control equipment, medical and life support systems and safety devices). 8 . 2. storage the package is sealed: the leds should be stored at 30c or less and 90%rh or less. and the leds are limited to use within one year, while the leds is pa cked in moisture - proof package with the desiccants inside. the package is opened: the storage ambient for the leds should not exceed 30c temperature or 6 0% relative humidity. it is recommended that leds out of their original packaging are ir - reflowed with in one week hrs . for extended storage out of their original packaging, it is recommended that the leds be stored in a sealed container with appropriate desiccant, or in a desiccators with nitrogen ambient. leds stored out of their original packaging for more than one week hrs should be baked at about 60 deg c for at least 2 0 hours before solder assembly.
7 / 7 part no. : lt e - c 216 - p - w bns - od - fc 002/a4 ir emitter and detector lt e - c 216 - p - w 8 . 3. cleaning use alcohol - based cleaning solvents such as isopropyl alcohol to clean the leds if necessary. 8 . 4 . soldering r ecommended soldering c onditions : reflow soldering s oldering iron pre - heat pre - heat time peak temperature soldering time 150~20 0c 120 seconds max. 260 c max. 10 seconds max.(max. two times) temperature soldering time 3 00c max. 3 seconds max. (one time one) becaus e different board designs use different number and types of devices, solder pastes, reflow ovens, and circuit boards, no single temperature profile works for all possible combinations. however, you can successfully mount your packages to the pcb by follo wing the proper guidelines and pcb - specific characterization . lite - on runs both component - level verification using in - house kyramx98 reflow chambers and board - level assembly. the results of this testing are verified through post - reflow reliability testing. profiles used at lite - on are based on jedec standards to ensure that all packages can be successfully and reliably surface mounted. figure on page3 shows a sample temperatu re profile compliant to jedec standards. you can use this example as a generic target to set up your reflow process. you should adhere to the jedec profile limits as well as specifications and recommendations from the solder paste manufacturer to avoid damaging the device and create a reliable solder joint. 8 . 5 . drive method an led is a current - operated device. in order to ensure intensity uniformity on multiple leds connected in parallel in an application, it is recommended that a current limiting resi stor be incorporated in the drive circuit, in series with each led as shown in circuit a below. circuit model ( a ) circuit model ( b ) (a) recommended circui t (b) the brightness of each led might appear different due to the differences in the i - v characteristics of those leds. 9 . others the appearance and specifications of the product may be modified for improvement, without prior notice. led led


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