b,may,2012 sot-89-3l 1. base 2. collector 3. emitter sot-89-3l plastic-encapsulate transistors a44 transistor (npn) features z low collector-emitter saturation voltage z high breakdown voltage marking: a44 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol t est conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 500 v collector-emitter breakdown voltage v (br)ceo * i c =1ma,i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector cut-off current i cbo v cb =400v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) * v ce =10v, i c =1ma 40 h fe(2) * v ce =10v, i c =10ma 50 200 h fe(3) * v ce =10v, i c =50ma 45 dc current gain h fe(4) * v ce =10v, i c =100ma 40 i c =1ma,i b =0.1ma 0.4 v i c =10ma,i b =1ma 0.5 v collector-emitter saturation voltage v ce(sat) * i c =50ma,i b =5ma 0.75 v base-emitter saturation voltage v be(sat) * i c =10ma,i b =1ma 0.75 v collector output capacitance c ob v cb =20v, i e =0, f=1mhz 7 pf emitter input capacitance c ib v be =0.5v, i c =0, f=1mhz 130 pf *pulse test: pulse width 300 s, duty cycle 2.0%. symbol par ameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 6 v i c collector current -continuous 2 00 ma p c collector power dissipation 500 mw r ja thermal resistance f rom junction t o ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 i cm collector current -pulsed 300 ma dongguan nanjing electronics ltd.,
|
