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september 2015 docid028397 rev 1 1 / 15 this is information on a product in full production. www.st.com STD28P3LLH6AG automotive - grade p - channel - 30 v, 0.027 typ., - 12 a stripfet? h6 power mosfet in a dpak package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STD28P3LLH6AG - 30v 0.030 - 12a 33w ? designed for automotive applications and aec - q101 qualified ? very low on - resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power l oss ? logic level applications ? switching applications description this device is a p - channel power mosfet developed using the stripfet? h6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code marking package packing STD28P3LLH6AG 28p3llh6 dpak tape and reel am 1 1258v1 d(2, t ab) s(3) g(1)
contents STD28P3LLH6AG 2 / 15 docid028397 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 dpak (to - 252) type a package information ................................ ..... 9 4.2 dpak (to - 252) packing information ................................ ............... 1 2 5 revision history ................................ ................................ ............ 14
STD28P3LLH6AG electrical ratings docid028397 rev 1 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage - 30 v v gs gate - source voltage 18 v i d (1) drain current (continuous) at t case = 25 c - 12 a drain current (continuous) at t c ase = 100 c i dm (2) drain current (pulsed) - 48 a p tot total dissipation at t case = 25 c 33 w e as (3) single pulse avalanche energy 210 mj t stg storage temperature C 55 to 150 c t j m aximum operating junction temperature 150 c notes: (1) limited by wire bonding (2) pulse width is limited by safe operating area. (3) starting t j = 25 c, i as = - 6 a, v dd = - 25 v, v gs = - 10 v . table 3: thermal data symbol parameter value unit r thj - cas e thermal resistance junction - case 3.75 c/w r thj - pcb (1) thermal resistance junction - pcb 50 notes: (1) when mounted on a 1 - inch2 fr - 4, 2 oz copper board
electrical characteristics STD28P3LLH6AG 4 / 15 docid028397 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = - 250 a - 30 v i dss zero gate vol tage drain current v gs = 0 v, v ds = - 30 v - 1 a v gs = 0 v, v ds = - 30 v, t case = 125 c - 10 i gss gate - body leakage current v ds = 0 v, v gs = 18 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = - 250 a - 1 - 2.5 v r ds(on) static drain - sou rce on - resistance v gs = - 10 v, i d = - 6 a 0.027 0.03 v gs = - 4.5 v, i d = - 6 a 0.038 0.05 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = - 25 v, f = 1 mhz, v gs = 0 v - 1480 - pf c oss output capac itance - 170 - c rss reverse transfer capacitance - 125 - q g total gate charge v dd = - 15 v, i d = - 12 a, v gs = - 10 v (see figure 14: "gate charge test circuit" ) - 29 - nc q gs gate - source charge - 4.7 - q gd gate - dra in charge - 5.6 - table 6: switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = - 15 v, i d = - 6 a r g = 4.7 , v gs = - 10 v (see figure 13: "switching times test circuit for resistive load" ) - 10 - ns t r rise time - 7.9 - t d(off) turn - off delay time - 41.5 - t f fall time - 6.9 -
STD28P3LLH6AG electrical characteristics docid028397 rev 1 5 / 15 table 7: source - drain diode s ymbol parameter test conditions min. typ. max. unit i sd source - drain current - - 12 a i sdm (1) source - drain current (pulsed) - - 48 a v sd (2) forward on voltage v gs = 0 v, i sd = - 12 a - - 1.3 v t rr reverse recovery time i sd = - 12 a, di/dt = 100 a/s, v dd = - 24 v (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 17.8 ns q rr reverse recovery charge - 10.2 nc i rrm reverse recovery current - - 1.2 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STD28P3LLH6AG 6 / 15 docid028397 rev 1 2.2 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer charac teristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STD28P3LLH6AG electrical characteristics docid028397 rev 1 7 / 15 figure 8 : capacitance variations figure 9 : no rmalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain dio de forward characteristics for the p - channel power mosfet, current and voltage polarities are reversed.
test circuits STD28P3LLH6AG 8 / 15 docid028397 rev 1 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times
STD28P3LLH6AG package information docid028397 rev 1 9 / 15 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 dpak (to - 252) type a package information figure 16 : dpak (to - 252) type a package outline
package information STD28P3LLH6AG 10 / 15 docid028397 rev 1 table 8: dpak (to - 252) type a mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 (l1) 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
STD28P3LLH6AG package information docid028397 rev 1 11 / 15 figure 17 : dpak (to - 252) recommended footprint (dimension s are in mm)
package information STD28P3LLH6AG 12 / 15 docid028397 rev 1 4.2 dpak (to - 252) packing information figure 18 : dpak (to - 252) tape outline
STD28P3LLH6AG package information docid028397 rev 1 13 / 15 figure 19 : dpak (t o - 252) reel outline table 9: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
revision history STD28P3LLH6AG 14 / 15 docid028397 rev 1 5 revision history table 10: docume nt revision history date revision changes 21 - sep - 2015 1 first release.
STD28P3LLH6AG docid028397 rev 1 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st prod ucts are sold pursuant to sts terms and conditions of sale in place at the time of order acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this do cument. ? 2015 stmicroelectronics C all rights reserved

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