ap10P230h advanced power p-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss -100v simple drive requirement r ds(on) 230m fast switching characteristic i d -8.5a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a 62.5 /w rating -100 + 20 total power dissipation 3 2 total power dissipation parameter drain-source voltage gate-source voltage drain current, v gs @ 10v halogen-free product -32 1 34.7 -55 to 150 201706011 -8.5 8.8 drain current, v gs @ 10v -5.4 maximum thermal resistance, junction-ambient (pcb mount) 3 -55 to 150 parameter operating junction temperature range thermal data pulsed drain current 1 storage temperature range a p10P230 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. g d s g d s to-252(h) .
ap10P230h electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -100 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4.2a - - 230 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-4.2a - 14 - s i dss drain-source leakage current v ds =-80v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-4.2a - 32 51.2 nc q gs gate-source charge v ds =-50v - 5.5 - nc q gd gate-drain ("miller") charge v gs =-10v - 5 - nc t d(on) turn-on delay time v ds =-50v - 11 - ns t r rise time i d =-4.2a - 10 - ns t d(off) turn-off delay time r g =3.3 -43- ns t f fall time v gs =-10v - 26 - ns c iss input capacitance v gs =0v - 1840 2944 pf c oss output capacitance v ds =-50v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-4.2a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-4.2a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=-100a/s - 34 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 4.starting t j =25 o c , v dd =-50v , l=1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board .
ap10P230h fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 105 109 113 117 121 125 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -4.2 a t c =25 0 8 16 24 32 0 4 8 12 16 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v - 7.0 v - 6.0 v v g = - 5.0v 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = - 4.2 a v g = -10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = - 250ua 0 4 8 12 16 20 0 4 8 12 16 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -7.0v -6.0v v g = -5.0v .
ap10P230h fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. typical power dissipation fig 12. gate charge waveform 4 q v g -10v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -50 v i d = - 4.2 a 0 1000 2000 3000 4000 1 21 41 61 81 101 121 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms dc operation in this area limited by r ds(on) 0 10 20 30 40 50 0 50 100 150 t c , case temperature ( o c ) p d (w) .
ap10P230h fig 13. normalized bv dss v.s. junction fig 14. transfer characteristics temperature fig 15. typ. drain-source on state fig 16. drain current v.s. case temperature resistance 5 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d = -1ma 0 200 400 600 800 0 4 8 12 16 20 24 -i d , drain current (a) r ds(on) (m ) t j =25 o c v gs = -10v 0 10 20 30 0123456 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -10v 0 2 4 6 8 10 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) .
ap10P230h marking information 6 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 10P230 ywwsss .
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