*rohs directive 2002/95/ec jan 27 2003 including annex march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series tisp3240f3, tisp3260f3, tisp3290f3,tisp3320f3,tisp3380f3 high-voltage dual bidirectional thyristor overvoltage protectors d package (top view) description these high-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. offered in five voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to switch. the high crowbar holding current prevents d.c. latchup as the current subsides. how to order ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state current <10 ? rated for international surge wave shapes 1 2 3 45 6 7 8 g g g g nc t r nc nc - no internal connection sl package (top view) device symbol md1xab 1 2 3 t g r g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c device v drm v v (bo) v 3240f3 180 240 3260f3 200 260 3290f3 220 290 3320f3 240 320 3380f3 270 380 waveshape standard i tsp a 2/10 s gr-1089-core 175 8/20 s iec 61000-4-5 120 10/160 s fcc part 68 60 10/700 s itu-t k.20/21 fcc part 68 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 dev i ce p acka g e c a r r i er tisp3xxxf3 d, s m all-o u tli n e t a p e a n d r eele d t i s p 3x xx f 3 dr sl, single-in-line tube tisp3xxxf3sl t i s p 3x xx f 3 dr-s tisp3xxxf3sl-s insert xxx value corresponding to protection voltages of 240 through 380 for standard termination finish order as for lead free termination finish order as .......................................ul recognized component *rohs compliant versions available
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series description (continued) these monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover c ontrol and are virtually transparent to the system in normal operation. absolute maximum ratings, t a = 25 ? (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage, 0 c < t a < 70 c 3240f3 3260f3 3290f3 3320f3 3380f3 v drm 180 200 220 240 270 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 350 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 175 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 90 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 120 10/160 (fcc part 68, 10/160 voltage wave shape) 60 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 38 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 35 non-repetitive peak on-state current, 0 c < t a < 70 c (see notes 1 and 3) 50 hz, 1 s d package sl package i tsm 4.3 7.1 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -65 to +150 c storage temperature range t stg -65 to +150 c notes: 1. further details on surge wave shapes are contained in the applications information section. 2. initially, the tisp device m ust be in thermal equilibrium with 0 c < t j <70 c. the surge may be repeated after the tisp device returns to its initial conditions. 3. above 70 c, derate linearly to zero at 150 c lead temperature. electrical characteristics for r and t terminal pair, t a = 25 ? (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = 2v drm , 0 c march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series electrical characteristics for t and g or r and g terminals, t a = 25 ? (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm , 0 c |