1 h igh diode semiconductor to- 9 2 electrical characteristics (t a=25 unless otherwise specified 1 2 3 features the output volt age can be adjusted to 36v low dynamic output impedance ,its typical value is 0.2 ? trapping current capability is 1 to 100ma the typical value of the equivalent temperature factor in the whole temperature scope is 50 ppm/ range of full temperature low output noise voltage fast on -state response z z z z z z z parame ter 6 \ p e r o v d o x h u q l w cathode v oltage v ka 37 v cathode current range (co ntinuous) i ka -100-+1 5 0 ma re ference lnp ut current ra n ge i r e f 0 . 0 5-+10 ma power dissipation p d 770 mw storage t emperature ran g e tstg -65 ~ +150 thermal resistance from junction to ambient r ja 16 2 /w operating ambient t emperature range t opr -25 ~ + 85 operating junction t emperature t j 150 paramet er symbol test conditions m in t yp m ax u nit reference lnput vo lt age v ref v ka =v ref , i ka =10ma 2.4 75 2.5 2.5 25 v deviation of r eference i np ut v oltage over t emperature (note) v ref /t v ka =v ref , i ka =10ma 4.5 17 mv v ka =10v~v ref -1.0 -2.7 m v/v ratio of change in referen c e lnput voltage to the c hange in cathode voltage v ref /v ka i ka =10ma v ka =36v~10v -0.5 -2. 0 m v/v reference lnp u t current l ref i ka = 1 0 ma,r 1 =10 k ? r 2 = 1.5 4 a deviati o n of r e fe rence ln put cu rre nt over f u ll t e mperature range l ref /t l ka =10ma, r 1 =10 k ? r 2 = 0.4 1.2 a minimum c athode c urrent for r egulation i ka(min) v ka =v ref 0.45 1.0 ma off-state c athode current i ka(off) v ka =36v ,v ref =0 0.05 1.0 a d y namic lm p e da nc e z ka v ka =v ref , l ka =1 to 1 00m a f 1. 0 k h z 0.1 5 0.5 ? min = -25 ,t max =+ 85 t min t a t max t a =-25 to 85 classification r i v ref rank 0 .5 % 1% range 2.4 87 -2.513 2.475-2.525 1.reference 2 .anode 3.cathode tl431 limiting values (absolute maximum rating) the effective temperature compensation in the working to-92 encapsulate adjustable refer ence source
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