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AFT26H250W03SR6 aft26h250--24sr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistors n--channel enhancement--mode lateral mosfets these 50 w asymmetrical doherty rf power ldmos transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 mhz. ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 700 ma, v gsb =0.4vdc,p out = 50 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 2496 mhz 14.1 44.6 8.1 --31.5 2590 mhz 14.4 44.9 8.1 --33.8 2690 mhz 14.2 44.2 7.9 --37.6 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications (aft26h250w03s) ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13--inch reel. document number: aft26h250w03s_24s rev. 0, 11/2013 freescale semiconductor technical data 1. pin connections 1 and 2 are dc coupled and rf independent. 2. device cannot operate with the v dd current supplied through pin 3 and pin 6. ni--1230s--4l2l aft26h250--24sr6 (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (2) vbw b (2) 6 3 15 24 carrier peaking ni--1230s--4s AFT26H250W03SR6 (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb carrier peaking (1) figure 1. pin connections figure 2. pin connections 2496?2690 mhz, 50 w avg., 28 v airfast rf power ldmos transistors AFT26H250W03SR6 aft26h250--24sr6 ? freescale semiconductor, inc., 2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range aft26h250w03s aft26h250--24s t c --40 to +125 --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 294 1.7 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 78 ? c, 50 w--cdma, 28 vdc, i dqa = 700 ma, v gsb = 0.4 vdc, 2590 mhz r ? jc 0.42 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current aft26h250w03s (4,5) (v ds =65vdc,v gs = 0 vdc) aft26h250--24s (6) i dss ? ? 10 ? adc zero gate voltage drain leakage current aft26h250w03s (4,5) (v ds =28vdc,v gs = 0 vdc) aft26h250--24s (6) i dss ? ? ? ? 5 1 ? adc gate--source leakage current aft26h250w03s (4,5) (v gs =5vdc,v ds = 0 vdc) aft26h250--24s (6) i gss ? ? 1 ? adc on characteristics -- side a (carrier) gate threshold voltage aft26h250w03s (4,6) (v ds =10vdc,i d = 140 ? adc) aft26h250--24s (6) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage aft26h250w03s (4,6) (v dd =28vdc,i da = 700 madc, aft26h250--24s (6) measured in functional test) v gs(q) 1.4 1.8 2.2 vdc drain--source on--voltage aft26h250w03s (4,6) (v gs =6vdc,i d = 1.4 adc) aft26h250--24s (6) v ds(on) 0.1 0.15 0.3 vdc on characteristics -- side b (peaking) gate threshold voltage aft26h250w03s (4,6) (v ds =10vdc,i d = 200 ? adc) aft26h250--24s (6) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage aft26h250w03s (4,6) (v gs =6vdc,i d = 2.0 adc) aft26h250--24s (6) v ds(on) 0.1 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. v dda and v ddb must be tied together and powered by a single dc power supply. 5. side a and side b are tied together for these measurements. 6. each side of device measure separately. (continued)
AFT26H250W03SR6 aft26h250--24sr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 700 ma, v gsb =0.4vdc,p out =50wavg., f = 2496 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 13.0 14.1 16.0 db drain efficiency ? d 41.0 44.6 ? % output peak--to--average ratio @ 0.01% probability on ccdf aft26h250w03s aft26h250--24s par 7.5 7.4 8.1 8.1 ? ? db adjacent channel power ratio acpr ? --31.5 --29.0 dbc load mismatch ? aft26h250w03s (in freescale test fixture, 50 ohm system) i dqa = 700 ma, f = 2590 mhz vswr 10:1 at 32 vdc, 364 w (4) cw output power (3 db input overdrive from 230 w cw rated power) no device degradation load mismatch ? aft26h250--24s (in freescale test fixture, 50 ohm system) i dqa = 700 ma, f = 2590 mhz vswr 10:1 at 32 vdc, 335 w (4) cw output power (2 db input overdrive from 230 w cw rated power) no device degradation typical performances (2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 700 ma, v gsb =0.4vdc, 2496--2690 mhz bandwidth p out @ 1 db compression point, cw p1db ? 230 ? w p out @ 3 db compression point (5) p3db ? 320 ? w am/pm (maximum value measured at the p3db compression point across the 2496--2690 mhz frequency range) ? ? -- 2 2 ? ? vbw resonance point aft26h250w03s (imd third order intermodulation inflection point) aft26h250--24s vbw res ? ? 140 110 ? ? mhz gain flatness in 194 mhz bandwidth @ p out =50wavg. g f ? 0.3 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.002 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (4) ? p1db ? 0.006 ? db/ ? c 1. part internally matched both on input and output. 2. v dda and v ddb must be tied together and powered by a si ngle dc power supply (aft26h250w03s). 3. measurements made with device in an a symmetrical doherty configuration. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 5. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6 figure 3. AFT26H250W03SR6(--24sr6 ) test circuit component layout + -- + -- aft26h250w03s/24s rev. 1 cut out area c1 d52784 c2 r2 c3 c4 c5 c6 c7 c8 z1 r1 c9 c10 r3 c22 c19 c20 c18 c17 c16 c15 c14 c13 c12 c11 c21 c p v dda v ddb v ggb v gga note: v dda and v ddb must be tied together and powered by a single dc power supply. table 5. AFT26H250W03SR6(--24sr6) test ci rcuit component designations and values part description part number manufacturer c1, c9, c11, c12, c19, c20 10 ? f chip capacitors c5750x7s2a106m230kb tdk c2, c5, c8, c10, c13, c18 6.8 pf chip capacitors atc600f6r8bt250xt atc c3, c4 0.5 pf chip capacitors atc600f0r5bt250xt atc c6, c7 0.3 pf chip capacitors atc600f0r3bt250xt atc c14 0.8 pf chip capacitor atc600f0r8bt250xt atc c15 2.0 pf chip capacitor atc600f2r0bt250xt atc c16 10 pf chip capacitor atc600f100jt250xt atc c17 0.9 pf chip capacitor atc600f0r9bt250xt atc c21, c22 220 ? f electrolytic capacitors 227cks050m illinois capacitor r1 50 ? , 4 w chip resistor cw12010t0050gbk atc r2, r3 2.0 ? , 1/4 w chip resistors crcw12062r00jnea vishay z1 2300--2700 mhz band, 5 db directional coupler x3c25p1-05s anaren pcb rogers ro4305b, 0.020 ? , ? r =3.66 d52784 mtl
AFT26H250W03SR6 aft26h250--24sr6 5 rf device data freescale semiconductor, inc. typical characteristics parc (db) 2480 acpr f, frequency (mhz) figure 4. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. -- 2 . 3 -- 1 . 5 -- 1 . 7 -- 1 . 9 -- 2 . 1 13 15 14.8 14.6 -- 3 9 47 46 45 44 -- 2 9 -- 3 1 -- 3 3 -- 3 5 ? d , drain efficiency (%) ? d g ps , power gain (db) 14.4 14.2 14 13.8 13.6 13.4 13.2 2510 2540 2570 2600 2630 2660 2690 2720 43 -- 3 7 -- 2 . 5 acpr (dbc) parc figure 5. intermodulation distortion products versus two--tone spacing ? aft26h250w03s two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 300 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im5--u im5--l im7--l im7--u g ps im3--l 100 v dd =28vdc,p out = 100 w (pep), i dqa = 700 ma v gsb = 0.4 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2590 mhz figure 6. intermodulation distortion products versus two--tone spacing ? aft26h250--24s two--tone spacing (mhz) 10 -- 7 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 300 imd, intermodulatio n distortion (dbc) -- 4 0 im5--u im5--l im7--u im3--l 100 v dd =28vdc,p out = 100 w (pep), i dqa = 700 ma v gsb = 0.4 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2590 mhz im3--u im7--l -- 6 0 v dd =28vdc,p out =50w(avg.) i dqa = 700 ma, v gsb =0.4ma single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf
6 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6 typical characteristics figure 7. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 30 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 10 50 70 110 0 60 50 40 30 20 10 ? d ? drain efficiency (%) --2db=54.1w 90 ? d acpr parc acpr (dbc) -- 4 5 -- 1 5 -- 2 0 -- 2 5 -- 3 5 -- 3 0 -- 4 0 16 g ps , power gain (db) 15 14 13 12 11 10 g ps --1db=33.6w -- 3 d b = 7 1 w -- 5 1 v dd =28vdc,i dqa = 700 ma v gsb = 0.4 vdc, f = 2590 mhz single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf 1 g ps acpr p out , output power (watts) avg. figure 8. single--carrier w--cdma power gain, drain efficiency and acpr versus output power 10 16 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 15 14 10 100 300 10 13 12 11 2690 mhz 2590 mhz 2496 mhz 2690 mhz 2496 mhz 2590 mhz 2496 mhz 2690 mhz 2590 mhz 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf v dd =28vdc,i dqa = 700 ma v gsb = 0.4 vdc, single--carrier w--cdma -- 1 0 -- 2 0 -- 6 0 acpr (dbc) 0 -- 3 0 -- 4 0 -- 5 0 figure 9. broadband frequency response 0 18 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 700 ma v gsb =0.4vdc 12 9 6 gain (db) 15 3 2300 2400 2500 2600 2700 2800 2900 3000 gain
AFT26H250W03SR6 aft26h250--24sr6 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dqa = 689 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 4.07 - j10.7 4.00 + j9.61 2.03 - j4.57 17.4 51.8 151 54.1 -13 2590 7.57 - j11.9 6.72 + j10.7 2.00 - j4.75 17.6 51.7 147 53.2 -12 2690 15.7 - j9.50 12.9 + j8.73 2.00 - j5.11 17.6 51.6 143 52.4 -13 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 4.07 - j10.7 3.92 + j10.2 1.92 - j4.78 15.2 52.5 179 54.9 -17 2590 7.57 - j11.9 7.03 + j11.7 1.91 - j4.97 15.3 52.4 174 53.6 -17 2690 15.7 - j9.50 14.9 + j9.37 1.92 - j5.34 15.3 52.3 170 52.4 -17 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 10. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 689 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 4.07 - j10.7 4.07 + j10.0 4.82 - j3.58 19.7 49.9 97 64.0 -19 2590 7.57 - j11.9 6.62 + j11.4 3.74 - j2.51 20.0 49.6 92 62.6 -21 2690 15.7 - j9.50 13.3 + j9.45 3.36 - j2.87 19.9 49.5 90 61.2 -20 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 4.07 - j10.7 3.77 + j10.6 4.53 - j2.90 17.8 50.4 111 64.0 -28 2590 7.57 - j11.9 6.80 + j12.2 3.67 - j2.58 18.0 50.3 108 62.7 -29 2690 15.7 - j9.50 15.2 + j9.96 3.36 - j2.87 17.9 50.2 105 61.2 -28 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 11. carrier side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6 v dd =28vdc,v gsb =0.4ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 3.33 - j9.36 3.00 + j9.43 2.00 - j5.09 12.1 53.2 209 54.4 -22 2590 4.98 - j10.4 5.22 + j10.6 2.11 - j5.43 12.2 53.1 203 53.8 -22 2690 10.9 - j8.12 11.3 + j9.48 2.35 - j6.10 12.1 52.9 196 52.8 -20 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 3.33 - j9.36 3.14 + j9.86 1.99 - j5.35 9.9 53.9 243 54.3 -28 2590 4.98 - j10.4 5.76 + j11.2 2.11 - j5.74 10.0 53.7 236 53.0 -28 2690 10.9 - j8.12 13.0 + j9.24 2.40 - j6.29 10.0 53.5 226 52.5 -26 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 12. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =0.4ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 3.33 - j9.36 2.65 + j9.45 4.22 - j3.35 13.3 51.6 144 64.3 -30 2590 4.98 - j10.4 4.64 + j10.7 3.57 - j3.41 13.4 51.6 145 63.8 -30 2690 10.9 - j8.12 10.5 + j10.4 3.29 - j3.86 13.1 51.6 143 62.4 -27 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2496 3.33 - j9.36 2.81 + j9.82 3.97 - j3.62 11.2 52.3 171 64.6 -38 2590 4.98 - j10.4 5.16 + j11.3 3.50 - j3.54 11.3 52.2 167 63.7 -38 2690 10.9 - j8.12 12.3 + j10.3 3.17 - j3.92 11.1 52.1 163 61.8 -35 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 13. peaking side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
AFT26H250W03SR6 aft26h250--24sr6 9 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 2590 mhz -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 14. p1db load pull output power contours (dbm) real ( ? ) -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 figure 15. p1db load pull efficiency contours (%) real ( ? ) figure 16. p1db load pull gain contours (db) real ( ? ) figure 17. p1db load pull am/pm contours ( ? ) real ( ? ) -- 4 -- 5 3.5 4 3 60 58 56 54 52 50 62 e e p e e 46 48 p p p 47.5 48 48.5 49 49.5 50 50.5 51 20 20.5 -- 1 2 -- 2 2 -- 2 8 51.5 16.5 17 17.5 18 18.5 19 19.5 -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 2 4 -- 2 6
10 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6 p3db -- typical carrier side load pull contours ? 2590 mhz -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 -- 6 -- 1 -- 2 imaginary ( ? ) 22.5 15 -- 3 4.5 1.5 -- 4 -- 5 3.5 4 3 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 18. p3db load pull output power contours (dbm) real ( ? ) figure 19. p3db load pull efficiency contours (%) real ( ? ) figure 20. p3db load pull gain contours (db) real ( ? ) figure 21. p3db load pull am/pm contours ( ? ) real ( ? ) 51.5 50 49.5 49 48.5 p e e p e 18.5 -- 1 6 -- 1 8 -- 2 0 e -- 2 2 -- 2 4 -- 2 6 -- 2 8 -- 3 0 -- 3 2 52 51 50.5 60 58 56 54 p 62 54 52 50 48 46 14.5 15 15.5 16 16.5 17 17.5 18 p
AFT26H250W03SR6 aft26h250--24sr6 11 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 2590 mhz figure 22. p1db load pull output power contours (dbm) real ( ? ) -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 -- 5 -- 6 3.5 4 3 -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 -- 5 -- 6 3.5 4 3 -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 -- 5 -- 6 3.5 4 3 -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 -- 5 -- 6 3.5 4 3 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 23. p1db load pull efficiency contours (%) real ( ? ) figure 24. p1db load pull gain contours (db) real ( ? ) figure 25. p1db load pull am/pm contours ( ? ) real ( ? ) 52.5 52 51.5 51 50.5 e p p e -- 3 6 -- 3 4 -- 3 2 -- 3 0 -- 2 8 -- 2 6 -- 2 4 -- 2 2 49 49.5 50 53 10 10.5 11 11.5 12 12.5 13 e p p p p p p e p p 48 50 52 54 56 58 60 62
12 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6 p3db -- typical peaking side load pull contours ? 2590 mhz -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 -- 5 -- 6 3.5 4 3 -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 -- 5 -- 6 3.5 4 3 -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 -- 5 -- 6 3.5 4 3 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 26. p3db load pull output power contours (dbm) real ( ? ) -- 7 -- 2 -- 3 imaginary ( ? ) 22.5 15 -- 4 4.5 1.5 figure 27. p3db load pull efficiency contours (%) real ( ? ) figure 28. p3db load pull gain contours (db) real ( ? ) figure 29. p3db load pull am/pm contours ( ? ) real ( ? ) -- 5 -- 6 3.5 4 3 p e 52.5 51.5 49.5 53 52 51 50 e p 62 60 58 56 54 52 50 48 p e 8.5 9 8 e p -- 4 2 -- 4 0 -- 3 8 -- 3 6 -- 3 4 -- 3 2 -- 3 0 -- 2 8 -- 2 6 9.5 10 10.5 11 53.5 50.5
AFT26H250W03SR6 aft26h250--24sr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6
AFT26H250W03SR6 aft26h250--24sr6 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6
AFT26H250W03SR6 aft26h250--24sr6 17 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 nov. 2013 ? initial release of data sheet
18 rf device data freescale semiconductor, inc. AFT26H250W03SR6 aft26h250--24sr6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft26h250w03s_24s rev. 0, 11/2013

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