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?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc june 2015 FPAM50LH60pfc spm ? 2 series for 2-phase interleaved pfc features ul certified no.e209024 (ul1557) 600 v - 50 a 2-phase interleaved pfc with integral gate driver and protection very low thermal resistance using al 2 o 3 dbc sub- strate full-wave bridge rectifier and high-performance output diode optimized for 20khz switching frequency built-in ntc thermistor for temperature monitoring isolation rating: 2500 v rms /min applications 2-phase interleaved pfc converter general description the FPAM50LH60 is a pfc spm ? 2 module providing a fully-featured, high-performanc e interleaved pfc (power factor correction) input power stage for consumer, med- ical, and industrial applications. these modules inte- grate optimized gate drive of the built-in igbts to minimize emi and losses, while also providing multi- ple on-module protection features including under-volt- age lockout, over-current shutdown, thermal monitoring, and fault reporting. these modules also feature a full- wave rectifier and high-performance output diodes for additional space savings and mounting convenience. fig. 1. 3d package drawing (click to activate 3d content) package marking and ordering information device device marking package packing type quantity FPAM50LH60 FPAM50LH60 s32ea-032 rail 8
?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc integrated drive, protectio n and system control functions for igbts: gate drive circuit, over-curr ent protection (ocp), control supply circ uit under-voltage lock-out (uvlo) protection fault signal: corresponding to oc and uv fault built-in thermistor: temperature monitoring input interface : active-high interface, work s with 3.3 / 5 v logic, schmitt trigger input pin configuration figure 2. top view case temperature(t c ) detecting point (1)c sc (2)com (3)v fo (4)in x (5)in y (6)com (7)n.c. (8)v cc (9)v cc (10)com (11)r th (12)v th (13)n r (14)n r (15)n.c. (16)n.c. (17)n.c. (18)r (19)r (20)n.c. (21)n.c. (22)s (23)s (32)p r (31)n p (30)y (29)x (28)p x (27)n.c. (26)p y (24)p (25)p dimension unit: millimeter
?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc pin descriptions internal equivalent circuit figure 3. internal block diagram pin number pin name pin description 1c sc signal input for over-current detection 2,6,10 com common supply ground 3v fo fault output 4i n x pwm input for x igbt drive 5i n y pwm input for y igbt drive 7 n.c no connection 8,9 v cc common supply voltage of ic for igbt drive 11 r th series resistor for the use of thermistor 12 v th thermistor bias voltage 13,14 n r negative dc-link of rectifier diode 15,16,17 n.c no connection 18,19 r ac input for r-phase 20,21 n.c no connection 22,23 s ac input for s-phase 24,25 p output of diode 26 p y input of diode 27 n.c no connection 28 p x input of diode 29 x output of x phase igbt 30 y output of y phase igbt 31 n p negative dc-link of igbt 32 p r positive dc-link of rectifier diode cscvfo iny com vcc out x (1)c sc (2)(6)(10) com (24)(25)p (22)(23)s (32)p r out y inx (8)(9)v cc (3)v fo (4)in x (5)in y (31)n p (30)y (29)x (18)(19)r (13)(14)n r (11)r th (12)v th thermistor (26)p y (28)p x
?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc absolute maximum ratings (t j = 25c, unless otherwise specified.) converter part 1st notes: 1. the maximum junction temperature rating of the power chips integrated within the pfc spm ? product is 125c. 2. marking * is calculation value or design factor. control part total system thermal resistance symbol parameter conditions rating unit v i input supply voltage applied between r - s 264 v rms v pn output voltage applied between x - n p , y - n p , p - p x , p - p y 450 v v pn(surge) output supply voltage (surge) applied between x - n p , y - n p , p - p x , p - p y 500 v v ces collector-emitter voltage breakdown voltage between x - n p , y - n p 600 v v rrm repetitive peak reverse voltage of frd breakdown voltage between p - p x , p - p y 600 v v rrmr repetitive peak reverse voltage of rec- tifier breakdown voltage between p r - r, p r - s, r - n r , s - n r 900 v *i f frd forward current t c = 25c, t j < 125c 50 a *i fsm peak surge current of frd non-repetitiv e, 60 hz single half-sine wave 500 a *i fr rectified forward current t c = 25c, t j < 125c 50 a *i fsmr peak surge current of rectifier non-repetitive, 60 hz single half-sine wave 500 a *i c each igbt collector current t c = 25c, t j < 125c 50 a *i cp each igbt collector current(peak) t c = 25c, t j < 125c, under 1 ms pulse width 100 a *p c collector dissipation t c = 25c per igbt 135 w t j operating junction temperature (1st note 1) -40 ~ 125 c symbol parameter conditions rating unit v cc control supply voltage applied between v cc - com 20 v v in input signal voltage applied between in x , in y - com -0.3 ~ v cc + 0.3 v v fo fault output supply voltage applied between v fo - com -0.3 ~ v cc + 0.3 v i fo fault output current sink current at v fo pin 1 ma v sc current sensing input voltage applied between c sc - com -0.3 ~ v cc + 0.3 v symbol parameter conditions rating unit t stg storage temperature -40 ~ 125 c v iso isolation voltage 60 hz, sinus oidal, ac 1 minute, connect pins to heat-sink plate 2500 v rms symbol parameter condition min. typ. max. unit r th(j-c)q junction to case thermal resistance each igbt under operating condition - - 0.74 c/w r th(j-c)d each diode under operating condition - - 1.13 c/w r th(j-c)r each rectifier under operating condition - - 0.74 c/w
?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc electrical characteristics (t j = 25c, unless otherwise specified.) converter part 1st notes: 3. t on and t off include the propagation delay of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under th e given gate driving condition internally. for the detailed information, please see figure 4. figure 4. switching time definition symbol parameter conditions min. typ. max. unit v ce(sat) igbt saturation voltage v cc = 15 v, v in = 5 v, i c = 50 a - 1.7 2.2 v v ff frd forward voltage i f = 50 a - 1.9 2.4 v v fr rectifier forward voltage i fr = 50 a - 1.13 1.35 v i rr switching characteristic v pn = 400 v, v cc = 15 v, i c = 25 a, v in = 0 v ? 5 v, inductive load (1st note 3), per igbt -2 7- a t rr -5 5- n s t on - 772 - ns t off -1 1 1 7- n s t c(on) -1 1 0- n s t c(off) - 125 - ns i ces collector - emitter leakage current v ces = 600 v - - 250 ? a v ce i c v in t on t c(on) 10% i c 10% v ce 90% i c t off t c(off) 10% v ce 10% i c (a) turn-on (b) turn-off i rr t rr 100% i c 100% i c
?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc control part 1st notes: 4. t th is the temperature of thermister itself. to know case temperature ( t c ), please make the experiment considering your application. figure 5. r-t curve of the built-in thermistor symbol parameter conditions min. typ. max. unit i qcc quiescent v cc supply current v cc = 15 v, in x , in y - com = 0 v, supply current between v cc and com - - 2.65 ma i pcc operating v cc supply current v cc = 15 v, f pwm = 20 khz, duty = 50% applied to one pwm signal input per igbt supply current between v cc and com --7 . 0m a v foh fault output voltage v sc = 0 v, v fo circuit: 10 k ? to 5 v pull-up 4.5 - - v v fol v sc = 1 v, v fo circuit: 10 k ? to 5 v pull-up - - 0.5 v v sc(ref) over-current protection trip level voltage of csc pin v cc = 15 v 0.45 0.5 0.55 v uv ccd supply circuit under- voltage protection detection level 10.5 - 13.0 v uv ccr reset level 11.0 - 13.5 v t fod fault-out pulse width 30 - - ? s v in(on) on threshold voltage applied between in x , in y - com 2.6 - - v v in(off) off threshold voltage applied between in x , in y - com - - 0.8 v r th resistance of thermistor at t th = 25c (1st note 4, figure 5) -4 7-k ? at t th = 100c (1st note 4, figure 5) -2 . 9-k ? 02 55 07 51 0 01 2 5 0 50 100 150 200 r-t curve resistance r th [k ? ] temperature t th [ o c] 95 100 105 110 115 120 125 1 2 3 4 resistance r th [k ? ] temperature t th [ o c]
?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc recommended oper ating conditions (t j = 25c, unless otherwise specified.) mechanical characteristics and ratings figure 6. flatness measurement position symbol parameter conditions min. typ. max. unit v i input supply voltage applied between r - s 187 - 253 v rms i i input current t c < 100c, v i = 220 v, v o = 360 v, f pwm = 20 khz per igbt --3 5a rms v pn supply voltage applied between x - n p , y - n p , p - p x , p - p y - - 400 v v cc control supply voltage applied between v cc - com 13.5 15.0 16.5 v dv cc /dt supply variation -1 - 1 v/ ? s i fo fault output current sink current at v fo pin - - 1 ma f pwm pwm input frequency -40c < t j < 125c per igbt - 20 - khz parameter conditions min. typ. max. unit mounting torque mounting screw: m4 recommended 0.98 n m 0.78 0.98 1.17 n m recommended 10 kg cm 8 10 12 kg cm device flatness see figure 6 0 - +150 ? m weight -3 2- g
?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc time charts of protective function a1 : control supply voltage rises: after the voltage rises uv ccr , the circuits start to operate when the next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under-voltage detection (uv ccd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under-voltage reset (uv ccr ). a7 : normal operation: igbt on and carrying current. figure 7. under-voltage protection (with the external over current detection circuit) c1 : normal operation: igbt on and carrying current. c2 : over-current detection (oc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : fault output timer operation starts. c6 : input low: igbt off state. c7 : input high: igbt on state, but during the active period of fault output the igbt doesnt turn on. c8 : igbt off state. figure 8. over-current protection input signal output current fault output signal control supply voltage reset uv ccr protection circuit state set reset uv ccd a1 a3 a2 a4 a6 a5 a7 internal igbt gate-emitter voltage input voltage (v in ) output current fault output signal oc input signal to csc pin for protection set reset c6 c7 c3 c2 c1 c8 c4 c5
?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc figure 9. typical a pplication circuit 2nd notes: 1. to avoid malfunction, the wiring of each input should be as short as possible(less than 2 ~ 3 cm). 2. v fo output is open-drain type. this signal line should be pulled up to the positive-side of the mcu or control power supply with a resistor that makes i fo up to 1 ma. 3. input signal is active -high type. there is a 5 k resistor inside the ic to pull-down each input signal line to gnd. rc coupling circuits is recommanded for the prevention of input signal oscillation. r f c f constant should be selected in the range 50~150ns ( recommended r f = 100 , c f = 1 nf). 4. to prevent error of the protection function, the wiring related with r scf and c scf should be as short as possible. 5. in the over current protection circuit, please select the r scf , c scf time constant in the range 1.5 ~ 2 s. 6. each capacitors should be mounted as close to the pfc spm ? product pins as possible. 7. relays are used at almost every systems of electrical equipments of home appliances. in these cases, there should be suffici ent distance between the mcu / controller and the relays. 8. internal ntc thermistor can be used for monitoring of the case temperature and protecting the devi ce from the overheating op eration. select an appropriate resistor r t accord- ing to the application. 9. it is recommended that anti-parallel diode ( d x , d y ) be connected with each igbt. mcu / controller +5 v +15 v +5 v input signal for over current protection c scf r scf v dc r fo l l csc vfo iny vcc com out x p s p r out y inx n p x y r p x p y n r r th v th thermistor current sensing v ac d y d x r f r f c f c f r t
?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc detailed package outline drawings package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or data on the drawing and contact a fairchildsemicondu ctor representative to veri fy or obtain the most recent revision. package s pecifications do not expand the terms of fa irchilds worldwide therm and conditions, specifically the the warranty therei n, which covers fairchild products. always visit fairchild semiconduct ors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/mo/mod32ba.pdf
?2012 fairchild semiconductor corporation 11 www.fairchildsemi.com FPAM50LH60 rev. 1.4 FPAM50LH60 pfc spm? 2 seri es for 2-phase interleaved pfc
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including typic als must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your localsales representative ? semiconductor components industries, llc

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