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| pre-irradiation radiation hardened power mosfet thru-hole (mo-036ab) www.irf.com 1 product summary part number radiation level r ds(on) i d IRHG9110 100k rads (si) 1.1 ? -0.75a irhg93110 300k rads (si) 1.1 ? -0.75a features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight for footnotes refer to the last page mo-036ab IRHG9110 100v, quad p-channel rad-hard ? hexfet ? mosfet technology international rectifier?s rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. absolute maximum ratings (per die) parameter units i d @ v gs = 12v, t c = 25c continuous drain current -0.75 i d @ v gs = 12v, t c = 100c continuous drain current -0.5 i dm pulsed drain current -3.0 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0.011 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 75 mj i ar avalanche current -1.0 a e ar repetitive avalanche energy 0.14 mj dv/dt peak diode recovery dv/dt 2.4 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 (0.63in./1.6mm from case for 10s) weight 1.3 (typical) g a pd-93819c
IRHG9110 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -0.75 i sm pulse source current (body diode) ? ? -3.0 v sd diode forward voltage ? ? -2.5 v t j = 25c, i s = -0.75a, v gs = 0v t rr reverse recovery time ? ? 90 ns t j = 25c, i f = -0.75a, di/dt -100a/ s q rr reverse recovery charge ? ? 257 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance (per die) parameter min typ max units t est conditions r thjc junction-to-case ? ? 17 r thja junction-to-ambient ? ? 90 c/w electrical characteristics @ tj = 25c (unless otherwise specified) (per die) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.11 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 1.2 v gs = -12v, i d = -0.75a resistance ? ? 1.1 v gs = -12v, i d =- 0.5a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 0.6 ? ? s v ds > -15v, i ds = -0.5a i dss zero gate voltage drain current ? ? -25 v ds = -80v, v gs = 0v ? ? -250 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = - 20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 15 v gs = -12v, i d = -0.75a, q gs gate-to-source charge ? ? 4.0 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 4.3 t d (on) turn-on delay time ? ? 22 v dd = -50v, i d = -0.75a, t r rise time ? ? 19 v gs = -12v, r g = 24 ? t d (off) turn-off delay time ? ? 66 t f fall time ? ? 51 l s + l d total inductance ? 10 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 335 ? v gs = 0v, v ds = 25v c oss output capacitance ? 100 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 22 ? na nh ns a ? note: corresponding spice and saber models are available international rectifier website. www.irf.com 3 pre-irradiation IRHG9110 table 1. electrical characteristics @ tj = 25c, post total dose irradiation (per die) parameter 100k rads (si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage - 2.0 - 4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -25 ? -25 a v ds = -80v, v gs = 0v r ds(on) static drain-to-source ? 1.06 ? 1.06 ? v gs = -12v, i d =-0.5a on-state resistance (to-39) r ds(on) static drain-to-source ? 1.1 ? 1.1 ? v gs = -12v, i d = -0.5a on-state resistance (mo-036ab) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHG9110 2. part number irhg93110 fig a. typical single event effect, safe operating area v sd diode forward voltage ? -2.5 ? -2.5 v v gs = 0v, i s = -0.75a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i table 2. typical single event effect safe operating area (per die) ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =20v cu 28.0 285 43.0 -100 -100 -100 -70 -60 br 36.8 305 39.0 -100 -100 -70 -50 -40 i 59.8 343 32.6 -60 ? ? ? ? IRHG9110 pre-irradiation 4 www.irf.com 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 5 7 9 11 13 15 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -0.75a www.irf.com 5 pre-irradiation IRHG9110 ! ! " " " #$ 1 10 100 0 100 200 300 400 500 600 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 12 14 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -0.75a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 1ms 10ms IRHG9110 pre-irradiation 6 www.irf.com % & ' () * " $ $ +& v 1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.2 0.3 0.5 0.6 0.8 t , case temperature ( c) -i , drain current (a) c d www.irf.com 7 pre-irradiation IRHG9110 & % " , ' & +& , ' & t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v ! -! +& q g q gs q gd v g charge ./ d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.34a -0.47a -0.75a v IRHG9110 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, l=150mh, peak i l = -1.0a, v gs = -12v i sd -0.75a, di/dt -132a/ s, v dd -100v, t j 150c case outline and dimensions ? mo-036ab footnotes: ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2014 q3 q4 q2 q1 q3 q4 q2 q1 |
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