cir cuit outl ine drawi ng dimension: mm t par t of diode brid ge & thy rist or m a ximu m ra ti ngs ? parameter ? symb ol conditions max. rated value g unit ? average rectified output current io (av) ? 3- phase full wave rectified t c = 1 13 ?R?? non - biased for thyristor 150 a t c = 88 ?R?? biased for thyristor 150 ??? operating junction temperature range tjw 125 150 ???R ?? tj 125 , can not be biased for thyristor - 40 +150 ?? storage temperature range tstg - 40 + 125 ~F?R isolation voltage viso ?g ac 1 g term inal to base, ac 1min. 20 00 v mounting torque ? mounting f ??T greased 6 2. 5 3.5 ? terminal 6 2. 5 3.5 ?? gate terminal m4 1.2 1.6 th er ma l ch ar ac te ri sti cs ? parameter ? symb ol conditions ? maximum value g unit ?? thermal resistance r th(c - f) ? ?g ( ?? ) ? ??T case to fin , total , greased 0.06 / (6 ) pa rt o f di od e br id ge (6 ar m. ) ma xi mu m ra ti ng ? parameter ? symbol max.rated value g unit ??R *1 repetitive peak reverse voltage v rrm 800 v ???R *1 non - repetitive peak reverse voltage v rsm 900 v ? parameter ? symb ol conditions max. rated value g unit *1 surge forward current i f sm 50hz ?? 1 ?? half sine wave, 1pulse, non - repetitive 12 00 a \rge *1 i squared t i 2 t 2 10ms 7200 a 2 S? allowable operating frequency f 400 hz *1 1 ?? value per 1 arm. 1 5 0 vg 8 0 0 ol t s p g h 1 5 0 n8
(6 ) p ar t of di od e br id ge (6 a rm .) el ec tr ic al c har a ct er is ti cs ? parameter ? symbol conditions ? maximum value g unit *1 peak reverse current i rm tj = 125 , v rm = v r rm 15 m a ?R *1 peak forward voltage v fm tj = 25 , i fm = 15 0a 1. 28 v ? thermal resistance r th( j- c) ??D ?g ( ?? ) ju nction to case , total 0. 08 / *1 1 ?? value per 1 arm. ( ) pa rt of th yr is to r( 1 ar m. ) ma xi mu m ra ti ng ? parameter ? symbol max.rated value g unit ??R *2 repetitive peak off - state voltage v drm 800 v ???R *2 non - repetitive peak off - state voltage v dsm 900 v *2 ?R?? can not be biased for thyristor ? parameter ? symb ol conditions max. rated value g unit surge on - state current i sm 50hz ?? 1 ?? half sine wave, 1pulse, non - repetitive 32 00 a \rg i squared t i 2 t 2 10ms 51200 a 2 RN critical rate of rise of turned - on current di/dt v d = 2/3 v d rm , i tm = 2 io , tj =125 i g = 300ma, di g /dt = 0.2a/ s 100 a/ s p? peak gate power p gm 5 w ?p? average gate power p g(av) 1 w peak gate current i gm 2 a ?R peak gate voltage v gm 10 v ?R peak gate reverse voltage v rgm 5 v elect rica l charac teri stic s ? parameter ? symbol conditions ? max imum value g unit min ? typ max peak off - state current i dm tj = 125 , v dm = v d rm 20 ma ?R peak off - state voltage v tm tj = 25 , i tm = 15 0a 1. 18 v ? gate current to trigger i gt v d = 6 v , i t = 1a tj = 40 3 00 ma tj = 25 150 tj = 125 80 ??R gate voltage to trigger v gt v d = 6 v , i t = 1a tj = 40 5 .0 v tj = 25 3.0 tj = 125 2 .0 ???R gate non - trigger voltage v gd tj =125 , v d = 2/3 v d rm 0.25 v R?RN critical rate of rise of off - state voltage dv/dt tj =125 , v d = 2/3 v d rm 500 v/ s ??rg turn - off time t q tj =125 , i tm = io , v d = 2/3 v d rm dv/dt = 20v/ s, v r = 100 v , \ di/dt = 20a/ s 150 s
? parameter ? symbol conditions ? max imum value g unit min ? typ max ??rg turn - on time t gt tj =25 , v d = 2/3 v d rm , i t =3 i o i g = 300ma, di g /dt = 0.2a/ s 6 s Wrg delay time t d 2 s rg rise time t r 4 s ? latching current i l tj =25 150 ma holding current i h tj =25 10 0 ma ? thermal resistance r th(j - c) ??g junction to case 0. 23 /w | s 450g approximate weight
forward current vs. voltage R PGH150N8 (per arm) 0 1 2 3 4 instantaneous forward voltage (v) ? r R 2 5 10 20 50 100 200 500 1000 2000 instantaneous forward current (a) ?r tj=25c tj=150c forward current vs. voltage R PGH150N8 (per arm) 0 1 2 3 4 instantaneous forward voltage (v) ? r R 2 5 10 20 50 100 200 500 1000 2000 instantaneous forward current (a) ?r tj=25c tj=150c PGH150N8(diode per 1 arm.)
on-state current vs. voltage R PGH150N8 0 1 2 3 4 5 6 instantaneous on-state voltage (v) ? r R 2 5 10 20 50 100 200 500 1000 2000 5000 instantaneous on-state current (a) ?r tj=25c tj=150c on-state current vs. voltage R PGH150N8 0 1 2 3 4 5 6 instantaneous on-state voltage (v) ? r R 2 5 10 20 50 100 200 500 1000 2000 5000 instantaneous on-state current (a) ?r tj=25c tj=150c PGH150N8(thyristor)
average on-state power dissipation ? p ? 0 40 80 120 160 average on-state current (a) ? 0 20 40 60 80 100 120 140 160 average on-state power dissipation (w) ? p ? PGH150N8 0 180 ? ? conduction angle d.c. average on-state power dissipation ? p ? 0 40 80 120 160 average on-state current (a) ? 0 20 40 60 80 100 120 140 160 average on-state power dissipation (w) ? p ? PGH150N8 0 180 ? ? conduction angle d.c. PGH150N8(thyristor) average forward power dissipation ? p ? 0 40 80 120 160 average output current (a) ? 0 50 100 150 200 250 300 350 400 average forward power dissipation (w) ? p ? PGH150N8 (total) 0 180 ? ? conduction angle 3phase average forward power dissipation ? p ? 0 40 80 120 160 average output current (a) ? 0 50 100 150 200 250 300 350 400 average forward power dissipation (w) ? p ? PGH150N8 (total) 0 180 ? ? conduction angle 3phase PGH150N8( diode t otal )
thyristo r diode per 1 arm. non biased biased d . c . PGH150N8( total)
5w 50 duty 20 4 0 2 5 1 2 5
transient thermal impedance ^ PGH150N8(diode per 1 arm.) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 time t (s) rg t (s) 0.05 0.1 0.2 0.5 1 transient thermal impedance rth(j-c) (c/w) ^ ?/w transient thermal impedance ^ PGH150N8(thyristor) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 time t (s) rg t (s) 0.01 0.02 0.05 0.1 0.2 0.5 transient thermal impedance rth(j-c) (c/w) ^ ?/w
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