vishay siliconix SI7925DN document number: 72343 s-81544-rev. c, 07-jul-08 www.vishay.com 1 dual p-channel 12-v (d-s) mosfet features ? halogen-free opti on available ? trenchfet ? power mosfet: 1.8 v rated applications ? load switch ? pa switch ? battery switch ? bi-directional switch product summary v ds (v) r ds(on) ( )i d (a) - 12 0.042 at v gs = - 4.5 v - 6.5 0.058 at v gs = - 2.5 v - 5.5 0.082 at v gs = - 1.8 v - 1.2 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 3.30 mm 3.30 mm bottom view powerpak 1212-8 ordering information: SI7925DN-t1-e3 (lead (pb)-free) SI7925DN-t1-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet s g d p-channel mosfet 2 2 2 1 1 1 notes: a. surface mounted on 1" x 1" fr4 board. b. see solder profile ( http://www.vishay.com/ppg?73257 ). the powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. c. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 12 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d - 6.5 - 4.8 a t a = 85 c - 4.7 - 3.4 pulsed drain current i dm - 20 continuous source current (diode conduction) a i s - 2.1 - 1.1 maximum power dissipation a t a = 25 c p d 2.5 1.3 w t a = 85 c 1.5 0.69 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b, c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 40 50 c/w steady state 75 94 maximum junction-to-case steady state r thjc 5.6 7 rohs compliant
www.vishay.com 2 document number: 72343 s-81544-rev. c, 07-jul-08 vishay siliconix SI7925DN notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.40 - 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v - 1 a v ds = - 12 v, v gs = 0 v, t j = 85 c - 5 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 6.5 a 0.033 0.042 v gs = - 2.5 v, i d = - 5.5 a 0.046 0.058 v gs = - 1.8 v, i d = - 1.2 a 0.065 0.082 forward transconductance a g fs v ds = - 6 v, i d = - 6.5 a 19 s diode forward voltage a v sd i s = - 2.1 a, v gs = 0 v - 0.8 - 1.2 v dynamic b total gate charge q g v ds = - 6 v, v gs = - 4.5 v, i d = - 6.5 a 11 12 nc gate-source charge q gs 1.7 gate-drain charge q gd 2.8 gate resistance r g 8.2 tu r n - o n d e l ay t i m e t d(on) v dd = - 6 v, r l = 6 i d ? - 1 a, v gen = - 4.5 v, r g = 6 20 30 ns rise time t r 50 75 turn-off delay time t d(off) 70 105 fall time t f 50 75 source-drain reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/s 41 80 output characteristics 0 4 8 12 16 20 0123456 v gs = 5 thru 2.5 v 2 v v ds - drain-to-source voltage (v) - drain current (a) i d 1.5 v 1 v transfer characteristics 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 t c = - 55 c 125 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72343 s-81544-rev. c, 07-jul-08 www.vishay.com 3 vishay siliconix SI7925DN typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage r ds(on) 0.00 0.04 0.08 0.12 0.16 0.20 048121620 i d - drain current (a) v gs = 4.5 v v gs = 1.8 v v gs = 2.5 v - on-resistance ( ) 0 1 2 3 4 5 024681012 v ds = 6 v i d = 6.5 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 t j = 150c t j = 25c 20 1 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s 10 capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 300 600 900 1200 1500 024681012 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 6.5 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) 0.00 0.04 0.08 0.12 0.16 0.20 012345 i d = 1.2 a r ds(on) v gs - gate-to-source voltage (v) i d = 6.5 a - on-resistance ( )
www.vishay.com 4 document number: 72343 s-81544-rev. c, 07-jul-08 vishay siliconix SI7925DN typical characteristics 25 c, unless otherwise noted threshold voltage - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power 0 20 30 10 15 power ( ) time (s) 25 100 600 0.1 0.001 1 10 0.01 5 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d 0.1 i d(on) limited limited by r ds (on)* i dm limited bv dss limited p(t) = 10 p(t) = 1 p(t) = 0.1 dc p(t) = 0.01 p(t) = 0.001 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 75 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72343 s-81544-rev. c, 07-jul-08 www.vishay.com 5 vishay siliconix SI7925DN typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72343 . normalized thermal transient impedance, junction-to-case 1 0.2 0.1 10 -3 10 -2 10 -1 10 -4 2 1 0.1 0.01 0.05 duty cycle = 0.5 square w ave pulse duration (s) normalized e f f ective t ransient thermal impedance 0.02 single pulse
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