, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB719 description ? high collector-emitter breakdown voltage- : v(br)ceo=-160v(min) ? wide area of safe operation ? complement to type 2sd759 applications ? designed for power amplifier and tv vertical deflection output applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak total power dissipation? tc=25'c junction temperature storage temperature range value -160 -160 -5.0 -2 -3 25 150 -55-150 unit v v v a a w r c - "??>. 2 ^t^ 3 fih: 1 base 1 2 collector 3 emitter ! 2 3 to-220c package j '?? a ! * - b h ij-eft c.1 {" k t j -?| c f c t~ !? j dim a b c d f g h j k l q r s u v --? i mm win 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10.20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 r ? i? a ? ?*-? n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n,l semi-conductors is believed to he both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verity that datasheets are current before placing orders. qualify semi-conductors
silicon pnp power transistor 2SB719 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vbe(sat) icbo iebo hfe ft parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product conditions lc= -5ma; ib= 0 lc= -0.1ma; ie= 0 ie= -0.1ma; lc=0 lc= -500ma; ib= -50ma ic- -500ma; ib= -50ma vcb=-150v;ie=0 veb= -3.0v; lc=0 lc=-150ma;vce=-5v lc= - 1 00ma; vce=- 10v min -160 -160 -5 35 typ. 100 max -1.0 -1.5 -10 -10 200 unit v v v v v u a u a mhz classifications a 35-70 b 60-120 c 100-200
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