1 2 10.2 0.2 1.3 0.2 8.9 0.3 0.8 0.1 5.0 0.5 1.4 0.2 4.5 0.2 0.5 0.2 0.4 0.1 pin 13.2 0.5 1.3 0.1 1 3 2 3 4 0.1 0.1 features low cost low leakage l o w f o r wa r d v o l t a g e d r o p h i gh c u r r e n t c a p a b i li t y mechanical data c a s e : jedec d 2 pak,molded plastic body t e r m i n a l s : solderable per mil-std-750, method 2026 p o l a r i t y : as marked w e ig h t : 0.087 ounces,2.2 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. h e r 520 b h e r 540 b h e r u n i t s maximum recurrent peak reverse voltage v r r m v max imum rms v olt age v r m s v maximum dc blocking voltage v dc v maximum average forw ard rectified current 9.5mm lead length, @t c = 7 5 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 5 . 0 a v f v maximum reverse current @t a =25 a t r a t e d d c b l o c k i ng v o l t a g e @ t a =100 maximum reverse recovery time (note1) t rr ns t y p i c a l j u n c t i o n c a p a c i t a n c e ( n o t e 2 ) c j pf j c /w operating junction temperature range t j storage temperature range t stg d 2 pak 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 1.3 1 . 7 1 . 0 40 50 100 150 h e r 510b - - - h e r 560b a 1 0 e a s ily c l e a n e d w i t h al c o ho l ,i s o p r o p a n o l a n d s i m i l a r s o l v e n t s i f ( a v ) 5 . 0 h i g h e ff i c i e n cy r ec t i f i er s v o l t a g e r a n g e : 10 0 - - - 600 v c urr e n t : 5 . 0 a 70 140 280 420 the plastic material carries u/l recognition 94v-0 a 3.thermal resistance junction to ambient. h e r 510 b 100 200 400 600 a 1 00 i r maximum ratings and electrical characteristics i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. - 55 ---- + 150 100 200 400 600 - 55 ---- + 150 560 b typical thermal resistance (note3) r 2 0 dimensions in millimeters www.diode.kr diode semiconductor korea
0 . 1 1 10 1 0 0 t j =25 pulse width=300 s 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 1 .8 2 .0 2.2 1 0 0 \ 2 00v 6 0 0v 4 00 v 1 2 4 108 20 40 60 100 100 0 25 50 75 t j =125 ?? 8.3ms single half sine-wave .2 tj=25 f=1mhz 1 0 .1 2 0 4 0 .4 1 . 0 2 4 0 0 1 0 0 2 0 0 6 0 0 10 0 0 4 10 20 40 1 0 0 0 1.0 2.0 25 50 75 100 125 150 3.0 4.0 5.0 amperes amperes amperes fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance f i g .5 - - p e a k f o r w a r d s u r g e c u r r e n t case t e m p e r a t u r e , peak forward surge current n u m b e r o f c y c l e s a t 6 0 h z reverse voltage,volts h e r 510b --- h e r 560b fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current s e t t i m e b a se f o r 20 / 45 n s / c m junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward voltage, volts instantaneous forward current t rr - 1 . 0 a - 0 . 25a 0 + 0 . 5 a 1cm pulse generator (note2) d.u.t. 50 n 1. 10 n1. oscilloscope (note 1) (+) 50vdc (approx) (-) 1 nonin- ductive diode semiconductor korea www.diode.kr
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