2010. 11. 11 1/3 semiconductor technical data KTC2825D epitaxial planar npn transistor revision no : 1 led drive application features h adoption of mbit processes. h low collector-to-emitter saturation voltage. h fast switching speed. maximum rating (ta=25 ? ) dpak dim millimeters a b c d d b e f g h h j j k l 1.0 max 2.3 0.2 0.5 0.1 0.5 0.1 e 0.9 0.1 m n m g a c f f 123 0.95 max 6.6 0.2 + _ 6.1 0.2 + _ 5.0 0.2 + _ 1.1 0.2 + _ 2.7 0.2 + _ + _ + _ + _ + _ 2.3 0.1 + _ 1.0 0.1 + _ n k l 1. base 2. collector 3. emitter electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 60 v vollector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6 v collector current i c 3 a collector current(pulse) i cp 6 a base current i b 600 ma collector power dissipation t a =25 ? p c 1 w t c =25 ? p c 15 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =40v, i e =0 - - 1 u emitter cut-off current i ebo v eb =4v, i c =0 - - 1 u dc current gain h fe (1) v ce =2v, i c =100 v 200 - 400 h fe (2) v ce =2v, i c =3a 35 - - collector-emitter saturation voltage v ce(sat) (1) i c =2a, i b =100 v - 0.19 0.5 v v ce(sat) (2) i c =360 v , i b =2 v - - 0.3 base-emitter saturation voltage v be(sat) i c =2a, i b =100 v - 0.94 1.2 v collector output capacitance c ob v cb =10v, f=1 ? , i e =0 - 25 - ? switching time turn-on time t on 5 hw( 25 -5v 25v 10i 1=-10i =i =1a b b2 c 100 50 vr i b1 pw=20 s dc 1% r8 input < = - 35 - ns storage time t stg - 470 - fall time t f - 90 -
2010. 11. 11 2/3 KTC2825D revision no : 1 collecotr current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 10 dc current gain h fe 0.3 0.1 0.03 0.01 collector current i (a) c h - i ce collector emitter voltage v (v) 0246 0 collector current i (a) 0.4 0.8 1.2 1.6 2.0 1.0 2.0 3.0 4.0 5.0 i =0 b fe c 1310 30 50 100 300 500 1k v =2v ce 81012 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 5ma 10ma 20ma 40ma 60ma 100ma collector current i (a) 0 0 0.8 1.6 c 2.4 3.2 base emitter voltage v (v) 0.4 i - v c be be 0.2 0.6 0.8 1.0 1.2 0.4 1.2 2.0 2.8 v =2v ce ta=75 c 25 c -25 c c ce i - v c 14 16 18 20 2.0 0.01 voltage v (mv) 10 100 30 50 500 300 ce(sat) 1k collector current i (a) 0.1 0.03 0.3 1 c 310 v - i ce(sat) c i /i =20 c b collector emitter saturation 80ma i =0 b 1ma 2ma 3ma 4ma 5ma 6ma 7ma 8ma ta=75 c ta=-25 c ta=25 c i /i =20 base-emitter saturation ta=25 c collector current i (a) 0.01 0.03 voltage v (v) 0.1 0.3 0.5 be(sat) 1 3 5 310 1 0.3 0.1 c ta=75 c ta=-25 c c b 10 v - i be(sat) c
2010. 11. 11 3/3 KTC2825D revision no : 1 outpuw capacitance c (pf) collector base voltage v (v) 3 1 1 5 3 10 30 100 cb ob 100 30 10 50 ob c - v cb f=1mhz 5 50 200 c collector power dissipation p (w) temperature (c ) 1 0 p c - t c 25 50 75 100 125 150 5 10 20 15
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