triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 1 60ghz low noise amplifier TGA4600 key features ? typical frequency range: 57 - 65 ghz ? 4 db nominal noise figure ? 13 db nominal gain ? bias 3.0 v, 41 ma ? 0.15 um 3mi phemt technology ? chip dimensions 1.62 x 0.84 x 0.10 mm (0.064 x 0.033 x 0.004 in) primary applications ? wireless lan ? point - to - point radio rf probe data bias conditions: vd = 3.0 v, id =41 ma irl orl gain note: datasheet is subject to change without notice. -30 -25 -20 -15 -10 -5 0 5 10 15 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) small signal (db) 0 1 2 3 4 5 6 7 8 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 2 TGA4600 q1 is 100 um fet, q2 is 100 um fet, q3 is 210 um fet. t a b l e i m a x im u m r a t in g s 1 / s y m b o l p a r a m e t e r v a l u e n o t e s vd d r a in v o lta g e 5 v 2/ vg g a te v o lta g e r a n g e - 1 t o + 0 .5 v id d r a in c u r r e n t 2 0 0 ma 2 / 3 / ? ig ? g a te c u r r e n t 5 ma 3 / p in in p u t c o n tin u o u s w a v e p o w e r 15 d b m p d p o w e r d is s ip a tio n 0 .3 9 w 2 / 4 / t ch o p e r a tin g c h a n n e l t e m p e r a tu r e 150 0 c 5 / 6 / t m m o u n tin g t e m p e r a tu r e ( 3 0 s e c o n d s ) 320 0 c t s t g s to r a g e t e m p e r a tu r e - 6 5 to 1 5 0 0 c 1 / t h e s e r a tin g s r e p r e s e n t th e m a x im u m o p e r a b le v a lu e s f o r th is d e v ic e . 2 / c o m b in a tio n s o f s u p p ly v o lta g e , s u p p ly c u r r e n t, in p u t p o w e r , a n d o u tp u t p o w e r s h a ll n o t e x c e e d p d . 3 / t o ta l c u r r e n t f o r th e e n tir e m m ic . 4 / w h e n o p e r a te d a t th is b ia s c o n d itio n w ith a b a s e p la te te m p e r a tu r e o f 7 0 0 c , th e m e d ia n lif e is 1.0e +6 hrs. 5 / j u n c tio n o p e r a tin g te m p e r a tu r e w i ll d ir e c tly a f f e c t th e d e v ic e m e d ia n tim e to f a ilu r e ( m t t f ) . f o r m a x im u m lif e , it is r e c o m m e n d e d th a t ju n c tio n te m p e r a tu r e s b e m a in ta in e d a t th e lo w e s t p o s s ib le le v e ls . 6 / t h e s e r a tin g s a p p ly to e a c h in d iv id u a l f e t . tab l e ii d c p r o b e te s ts ( t a = 2 5 0 c , n o m in a l) s y m b o l p a r a m e t e r m in . t y p . m a x . u n it s v b v g d , q 1 - q 3 b r e a k d o w n v o lta g e g a te - s o u r c e - 3 0 -5 v v b v g s , q 3 b r e a k d o w n v o lta g e g a te - s o u r c e - 3 0 -5 v v p , q 1 ,2 ,3 p in c h - o f f v o lta g e - 1 .0 - 0 .1 v
triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 3 table iii electrical characteristics (ta = 25 0 c nominal) TGA4600 p a r a m e t e r t y p ic a l u n it s f r e q u e n c y r a n g e 5 7 - 6 5 g h z d r a in v o lta g e , vd 3 .0 v d r a in c u r r e n t, id 41 ma g a te v o lt a g e , vg - 0 .5 - 0 v s m a ll s ig n a l g a in , s 2 1 13 db in p u t r e t u r n l o s s , s 1 1 20 db o u tp u t r e tu r n l o s s , s 2 2 6 db n o is e f ig u r e , n f 4 db t a b l e iv t h e r m a l in f o r m a t io n p a r a m e t e r t e s t c o n d it io n s t ch ( o c) r ? jc ( ? m ( h r s ) r ? j c t h e r m a l r e s is ta n c e ( c h a n n e l to c a s e ) v d = 3 v id = 4 1 ma p d is s = 0 .1 2 w 80 83 1 .2 e + 9 n o te : a s s u m e s e u te c tic a tta c h u s in g 1 .5 m il 8 0 /2 0 a u s n m o u n te d to a 2 0 m il c u m o c a r r ie r a t 7 0 o c b a s e p la te te m p e r a tu r e . w o r s t c a s e c o n d itio n w ith n o r f a p p lie d , 1 0 0 % o f d c p o w e r is d is s ip a te d .
triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 4 rf probe data bias conditions: vd = 3.0 v, id = 41 ma TGA4600 5 6 7 8 9 10 11 12 13 14 15 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) gain (db) 0 1 2 3 4 5 6 7 8 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 5 rf probe data bias conditions: vd = 3.0 v, id = 41 ma TGA4600 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) input return loss (db) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 6 mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4600
triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 7 recommended chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 3 mil ribbon 3 mil ribbon ribbons as short as possible TGA4600
triquint semiconductor texas: phone (972)994 - 8465 fax (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com product data sheet june 15, 2013 8 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4600 r e flo w p r o c e s s a s s e m b ly n o te s : ? u s e a u s n ( 8 0 /2 0 ) s o ld e r w ith lim ite d e x p o s u r e to te m p e r a tu r e s a t o r a b o v e 3 0 0 0 c ( 3 0 s e c o n d s m a x ) . ? a n a llo y s ta tio n o r c o n v e y o r fu r n a c e w ith r e d u c in g a tm o s p h e r e s h o u ld b e u s e d . ? n o flu x e s s h o u ld b e u tiliz e d . ? c o e ffic ie n t o f th e r m a l e x p a n s io n m a tc h in g is c r itic a l fo r lo n g - te r m r e lia b ility . ? d e v ic e s m u s t b e s to r e d in a d r y n itr o g e n a tm o s p h e r e . c o m p o n e n t p la c e m e n t a n d a d h e s iv e a tta c h m e n t a s s e m b ly n o te s : ? v a c u u m p e n c ils a n d /o r v a c u u m c o lle ts a r e th e p r e fe r r e d m e th o d o f p ic k u p . ? a ir b r id g e s m u s t b e a v o id e d d u r in g p la c e m e n t. ? t h e fo r c e im p a c t is c r itic a l d u r in g a u to p la c e m e n t. ? o r g a n ic a tta c h m e n t c a n b e u s e d in lo w - p o w e r a p p lic a tio n s . ? c u r in g s h o u ld b e d o n e in a c o n v e c tio n o v e n ; p r o p e r e x h a u s t is a s a fe ty c o n c e r n . ? m ic r o w a v e o r r a d ia n t c u r in g s h o u ld n o t b e u s e d b e c a u s e o f d iffe r e n tia l h e a tin g . ? c o e ffic ie n t o f th e r m a l e x p a n s io n m a tc h in g is c r itic a l. in te r c o n n e c t p r o c e s s a s s e m b ly n o te s : ? t h e r m o s o n ic b a ll b o n d in g is th e p r e fe r r e d in te r c o n n e c t te c h n iq u e . ? f o r c e , tim e , a n d u ltr a s o n ic s a r e c r itic a l p a r a m e te r s . ? a lu m in u m w ir e s h o u ld n o t b e u s e d . ? m a x im u m s ta g e te m p e r a tu r e is 2 0 0 0 c.
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