jiangsu changjiang electron ics technology co., l td dfnwb5 2-6l-a plastic-encap sulate mosfets CJND2007 dual n-channel mosfet description the cjnd2 007 uses advanced tr ench technology to provide excellent r ds(on) and low gate charge . it is esd protected. this device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. marking: maximum ratings (t a =25 unless otherw ise noted) paramete r symbol value unit drain-sourc e voltage v ds 20 v gate-source voltage v gs 12 v continuo us drain current i d 7 a pulsed drain current i dm * 30 a thermal resist ance from junction to ambient(note1) r ja 175 /w thermal resist ance from junction to ambient(note2) 70 /w junction temperature t j 150 storage te mperature t stg -55~+ 150 lead t emperature for soldering purposes(1/8?? from case for 10 s) t l 260 *repetitive rati ng pluse width limited by junction temperature. note 1.when mounted on a minimum pad. 2.when mounted on 1 in 2 of 2oz copper boar d. dfn w b5 2-6 l-a ? v (br) dss r ds(on) max i d 20v ? 20 m @10 v 7 a ? 22 m @4 .5v 24 m@3.8v ? 26 m @2 .5v 35 m @1. 8v equivalent circuit www.cj-elec.com 1 c,may,2015
paramete r symbol test condition min typ max unit sta tic parameters drain-sourc e breakdown voltage v (br) ds s v gs = 0v, i d = 250a 20 v ze ro gate voltage drain current i dss v ds =16v,v gs = 0 v 1 a gate-body l eakage current i gss v gs = 4.5v, v ds = 0v 1 a v gs =8v, v ds = 0 v 10 a gate threshold voltage (note 1) v gs(t h) v ds =v gs , i d =250a 0.4 1 v drain-sourc e on-resistance (note 1) r ds (on) v gs =10v, i d =7a 20 m ? v gs =4.5v, i d =6.6 a 22 m ? v gs =3.8v, i d =6a 24 m ? v gs =2.5v, i d =5.5 a 26 m ? v gs =1.8v, i d =5a 35 m ? fo rward tranconductance (note 1) g fs v ds =5v, i d =7a 9 s diode forward voltage (note 1) v sd i s =1a, v gs = 0v 1 v dyna mic parameters (note 2) input capa citance c iss v ds =10v,v gs =0v,f =1mhz 1150 pf output capa citance c oss 185 pf reverse t ransfer capacitance c rss 145 pf to tal gate charge q g v ds =10v,v gs =4.5 v,i d =7a 15 nc gate-source charg e q gs 0.8 nc gate-drain charge q gd 3.2 nc switching par ameters (note 2) tu rn-on delay time t d(on) v gs =5v,v dd =10v, r l =1.3 5 ?,r gen =3 ? 6 ns tu rn-on rise time t r 13 ns tu rn-off delay time t d(o ff) 52 ns tu rn-off fall time t f 16 ns notes : 1. pulse test : pulse width 300s, duty cycle 0.5%. 2. guaranteed by design, not su bject to production testing. www.cj-elec.com 2 c,may,2015 mosfet electrical characteristics a t =25 / unless otherwise specified
01234 56 0 4 8 12 16 20 02468 1 0 0 20 40 60 80 0 4 8 12 16 20 0 20 40 60 80 0123 0 5 10 15 20 0.4 0.6 0.8 1 .0 1.2 0.01 0.1 1 10 25 50 75 100 125 0.55 0.60 0.65 0.70 0.75 0.80 22 2.2v 2.0v 1.8v 1.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =1.2v gate to source voltage v gs (v) on -resistance r ds( on) (m ? ) i d =3a t a =25 pulsed v gs ?? r ds(o n) t a =25 pulsed v gs =10v v gs =2v on -resistance r ds( on) (m ? ) drain current i d (a) i d ?? r ds(o n) ou tput characteristics drain current i d (a) gate to source voltage v gs (v) v ds =5v pulsed t a =100 t a =25 tr ansfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? thresho ld voltage v th (v) ambient temperature t a ( ) i d =250ua thr eshold voltage 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 c,may.2015
4 c,may,2015
!" ! #" !" !#" a1 0.000 0.050 0.000 0.002 a3 d 1.924 2.076 0.076 0.082 e 4.924 5.076 0.194 0.200 d1 1.350 1.550 0.053 0.061 e1 2.950 3.150 0.116 0.124 k b 0.200 0.300 0.008 0.012 e l 0.424 0.576 0.017 0.023 0.500typ. 0.020typ. $ %!& %%' 0.200min. 0.008min. 0.203ref. 0.008ref. a 0. 700 0.800 0.028 0.031
dfnwb5x2-6l tape and reel www.cj-elec.com 5 c,may,2015
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