20b 1 of 2 features ! lo w forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability me c hanical data c ! c a se: molded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.40 grams (approx.) ! mounting position: any ! marking: type number maximum r a tings and electrical characteristics @t a =2 5 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol unit p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 300 400 600 800 1000 v rm s reverse voltage v r(rm s) 35 70 140 210 280 420 560 700 v a v erage rectified output current (note 1) @t a = 55 c i o 2.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 60 a forward v o ltage @i f = 2 . 0a v fm 1.0 1. 3 1. 7 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100 c i rm 5.0 100 a revers e rec overy time (note 2) t rr 50 75 ns t y pical junction capacitance (note 3) c j 60 40 pf operati ng temperature range t j -65 to +150 c st orage temperature range t stg -65 to +150 c *g lass pas sivated forms are available upon request note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. see figure 5. 3. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. do-15 dim m in max a 25. 4 ? b 5.50 7. 62 c 0. 71 0. 864 d 2.60 3. 60 all d i mensions in mm 2. 0 a glass passivated ultrafast diode ! g l ass passivated die construction ! lead free: for rohs / lead free version z ibo seno electronic engineering co., ltd. www.senocn.com egp20a ? egp20m 20a egp egp 20d egp 20f egp 20g egp egp 20j 20k egp 20m egp egp20a ? egp20m a l l d a t a s h e e t
2 of 2 0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175 200 i , a verage fwd rectified current (a) (av) t , ambient temperature ( c) fig. 1 forward current derating curve a single phase half-wave 60 hz resistive or inductive load 0.01 1.0 2.0 10 0.6 0.8 1.0 1.2 1.4 i , inst antaneous forward current (a) f v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25 c j pulse width = 300 s m i , peak forward surge current (a) fsm 0 20 40 60 1 10 100 number of cycles at 60hz fig. 3 peak forward surge current 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5/10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) z ibo seno electronic engineering co., ltd. www.senocn.com egp20j-egp20m egp20a ? egp20m egp20a ? egp20m egp20a-egp20f egp20g 1 10 100 1 10 100 c , cap acitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25 c f = 1.0mhz j egp20a-egp20g egp20j-egp20m a l l d a t a s h e e t
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