? 2017 ixys corporation, all rights reserved ds100779a(5/17) x2-class power mosfet n-channel enhancement mode ixtu4n70x2 IXTY4N70X2 ixta4n70x2 ixtp4n70x2 v dss = 700v i d25 = 4a r ds(on) ? ? ? ? ? 850m ? ? ? ? ? features ? international standard packages ? low r ds(on) and q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 700 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 5 ? a t j = 125 ? c 50 ? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 850 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 700 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 700 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c4a i dm t c = 25 ? c, pulse width limited by t jm 8a i a t c = 25 ? c2a e as t c = 25 ? c 150 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns p d t c = 25 ? c80w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force (to-263 & to-251) 10..65 / 2.2..14.6 n/lb m d mounting torque (to-220) 1.13 / 10 nm/lb.in weight to-251 0.40 g to-252 0.35 g to-263 2.50 g to-220 3.00 g g = gate d = drain s = source tab = drain g d s to-220 (ixtp) d (tab) to-252 (ixty) g s to-263 (ixta) g d (tab) s d (tab) to-251 (ixtu) d (tab) g s d preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixtu4n70x2 IXTY4N70X2 ixta4n70x2 ixtp4n70x2 note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 4 a i sm repetitive, pulse width limited by t jm 16 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 186 ns q rm 1.3 ???????????? c i rm 14.0 a i f = 2a, -di/dt = 100a/ s v r = 100v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 2.6 4.0 s r gi gate input resistance 13 ? c iss 386 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 280 pf c rss 1 pf c o(er) 29 pf c o(tr) 80 pf t d(on) 20 ns t r 27 ns t d(off) 66 ns t f 28 ns q g(on) 11.8 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 3.8 nc q gd 3.5 nc r thjc 1.56 ? c/w r thcs to-220 0.50 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 50 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2017 ixys corporation, all rights reserved ixtu4n70x2 IXTY4N70X2 ixta4n70x2 ixtp4n70x2 fig. 1. output characteristics @ t j = 25 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 00.511.522.53 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ t j = 125 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 012345678 v ds - volts i d - amperes v gs = 10v 7v 5v 6v 4v fig. 4. r ds(on) normalized to i d = 2a value vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 4a i d = 2a fig. 5. r ds(on) normalized to i d = 2a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0123456789101112 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 2. extended output characteristics @ t j = 25 o c 0 2 4 6 8 10 12 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 8v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. ixtu4n70x2 IXTY4N70X2 ixta4n70x2 ixtp4n70x2 fig. 8. input admittance 0 1 2 3 4 5 6 7 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 7. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 1 2 3 4 5 6 7 8 9 01234567 i d - amperes g f s - siemens t j = - 40 o c 125 o c 25 o c fig. 10. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 11. gate charge 0 2 4 6 8 10 024681012 q g - nanocoulombs v gs - volts v ds = 350v i d = 2a i g = 10ma fig. 12. capacitance 0.1 1 10 100 1000 10000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss
? 2017 ixys corporation, all rights reserved ixys ref: t_4n70x2(x1-s602) 1-19-17 ixtu4n70x2 IXTY4N70X2 ixta4n70x2 ixtp4n70x2 fig. 15. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 14. forward-bias safe operating area 0.01 0.1 1 10 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 25 o c single pulse 25 s 1ms 100 s r ds( on ) limit 10ms dc fig. 13. output capacitance stored energy 0 1 2 3 4 5 6 7 0 100 200 300 400 500 600 700 v ds - volts e oss - microjoules
ixys reserves the right to change limits, test conditions, and dimensions. ixtu4n70x2 IXTY4N70X2 ixta4n70x2 ixtp4n70x2 to-220 outline 1 - gate 2,4 - drain 3 - source e1 e a d1 d q l1 op h1 a1 l a2 d2 e c e1 e1 3x b2 e 3x b ejector pin to-251 outline to-252 aa outline 1 - gate 2,4 - drain 3 - source l1 b2 e1 l4 e a c2 h a1 a2 l2 l a e c 0 e1 e1 e1 e1 e1 optional 5.55min 1.25min 6.50min 2.28 6.40 bottom view 2.85min land pattern recommendation 4 1 2 3 4 l3 b3 to-263 outline 1 - gate 2,4 - drain 3 - source c2 a h 1 b d e d1 e1 b2 l2 l1 2 3 4 l3 a2 a1 e c e 0 ??? 0.43 [11.0] 0.66 [16.6] 0.06 [1.6] 0.10 [2.5] 0.20 [5.0] 0.34 [8.7] 0.12 [3.0]
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