n-channel super junction power mosfet v ds @ t jmax 650 v r ds(on) max 180 m i d 21 a general description the series of devices use advanced super junction technology and design to provide excellent r ds(on) with low gate charge. this super juncti on mosfet fits the industrys ac-dc smps requirements for pfc, ac/dc power conversion, a nd industrial power applications. features ? new technology for high voltage device ? low on-resistance and low conduction losses ? small package ? ultra low gate charge cause lower driving requirements ? 100% avalanche tested ? rohs compliant application ? power factor correction ? pfc ? ? switched mode power supplies(smps) ? uninterruptible power supply ? ups ? package marking and ordering information device device package marking RM21N650T7 to-247 21n650 table 1. absolute maximum ratings (t c =25 ) parameter symbol RM21N650T7 unit drain-source voltage ( v gs= 0v ? v ds 650 v gate-source voltage ( v ds= 0v) v gs f 30 v continuous drain current at tc=25c i d (dc) 21 a continuous drain current at tc=100c i d (dc) 13.2 a pulsed drain current (note 1) i dm (pluse) 63 a maximum power dissipation(tc=25 ) derate abov e 25 c p d 200 1.6 w w/ c single pulse avalanche energy (note 2) e as 690 mj avalanche current (note 1) i ar 7 a repetitive avalanche energy t ar limited by t jmax (note 1) e ar 1 mj schematic dia g ram RM21N650T7 2016-12 rev:o15
drain source voltage slope, v ds 0 480 v, dv/dt 50 v/ns reverse diode dv/dt v ds 0 480 v,i sd RM21N650T7 unit parameter symbol RM21N650T7 unit " " " " " " "
figure1. safe operating area figure3. source-drain diode forward voltage figure4. output characteristics figure5. transfer characteristics figure6. static drain-source on resistance figure7. r ds(on) vs junction temperature rating and characteristics curves (RM21N650T7) " " " " " " "
figure8. bv dss vs junction temperature figure9. maximum i d vs junction temperature figure10. gate charge waveforms figure11. capacitance figure12. transient thermal impedance " " " " " " " rating and characteristics curves (RM21N650T7)
testcircuit 1 ? ? gate charge test circuit & waveform 2 ? switch time test circuit ? 3 ? unclamped inductive switching test circuit & waveforms " " " " " " "
to-247 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.850 5.150 0.191 0.200 a1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 d 15.450 15.750 0.608 0.620 e1 3.500 ref 0.138 ref e2 3.600 ref 0.142 ref l 40.900 41.300 1.610 1.626 l1 24.800 25.100 0.976 0.988 l2 20.300 20.600 0.799 0.811 ? 7.100 7.300 0.280 0.287 e 5.450 typ 0.215 typ h 5.980 ref 0.235 ref " " " " " " "
rectron inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. rectron inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. data sheet specifications and its information contained are intended to provide a product description only. "typical" paramet- ers which may be included on rectron data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. rectron inc does not assume any liability arising out of the application or use of any product or circuit. rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of rectron inc. customers using or selling rectron components for use in such applications do so at their own risk and shall agree to fully indemnify rect- ron inc and its subsidiaries harmless against all claims, damages and expendit- ures. disclaimer notice
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