jiangsu changjiang electronics technology co., ltd sot-323 plastic-encapsulate transistors SS8050 transistor (npn) features complimentary to ss8550 marking: y1 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a collector cut-off current i ceo v c e =20v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 100ma 120 400 dc current gain h fe(2) v ce =1v, i c = 800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b = 80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b = 80ma 1.2 v transition frequency f t v ce =10v, i c = 50ma, f=30mhz 100 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 15 pf classification of h fe (1) rank l h j range 120-200 200-350 300-400 so t -323 1. base 2. emitter 3. collector www.cj-elec.com 1 a,jun,2014 www.cj-elec.com b,sep,2014 j c ( t m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 40 v v ceo collector - emitter voltage 25 v v ebo emitter - base voltage 5 v i c collector current 1 . 5 a p c collector power dissipation 250 m w r ja thermal resistance from j u nction to a mbient 500 /w t j junction temperature 150 t stg storage temperature - 55 + 150
200 300 400 500 600 700 800 900 1000 1 10 100 1000 110100 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 300 1 10 100 1000 100 1000 0.1 1 10 1 10 100 1 10 100 1000 10 100 1000 0.0 0.5 1.0 1.5 2.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 1 10 100 1000 1 10 100 1000 v ce =1v collcetor current i c (ma) base-emmiter voltage v be (mv) i c v be ?? ta=100 ta=25 i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce =10v ta=25 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a collector current i c (ma) base-emitter saturation voltage v besat (mv) i c v besat ?? =10 ta=100 ta=25 2000 1500 cob cib capacitance c (pf) reverse voltage v (v) v cb / v eb c ob / c ib ?? f=1mhz i e =0/i c =0 ta=25 200 20 dc current gain h fe collector current i c (ma) ta=100 ta=25 v ce =1v i c h fe ?? 1500 1000ua 900ua 800ua 700ua 600ua 500ua 400ua 300ua 200ua i b =100ua collector current i c (a) collector-emitter voltage v ce (v) static characteristic common emitter ta=25 1500 =10 ta=100 ta=25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? 1500 www.cj-elec.com 2 a,jun,2014 www.cj-elec.com b,sep,2014 typical characteristics
mi n ma x min max a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ 6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 a,jun,2014 www.cj-elec.com b,sep,2014
so t -323 tape and reel
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