specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 5 january 2007 ag302-63 ingap hbt gain block product features ? dc ? 6000 mhz ? +13.5 dbm p1db at 900 mhz ? +26.5 dbm oip3 at 900 mhz ? 15.5 db gain at 900 mhz ? single voltage supply ? lead-free / rohs-compliant / green sot-363 package ? internally matched to 50 applications ? mobile infrastructure ? catv / fttx ? w-lan / ism ? rfid ? wimax / wibro product description the ag302-63 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mou nt package. at 900 mhz, the ag302-63 typically provid es 15.5 db gain, +26.5 dbm oip3, and +13.5 dbm p1db. t he device combines dependable performance with consist ent quality to maintain mttf values exceeding 1000 year s at mounting temperatures of +85 c and is housed in a lead- free/green/rohs-compliant sot-363 industry standard smt package. the ag302-63 consists of darlington pair amplifiers using the high reliability ingap/gaas hbt process technol ogy and only requires dc-blocking capacitors, a bias re sistor, and an inductive rf choke for operation. the broadband mmic amplifier can be directly applie d to various current and next generation wireless techno logies such as gprs, gsm, cdma, and w-cdma. in addition, the ag302-63 will work for other various applicatio ns within the dc to 6 ghz frequency range such as catv and wimax. functional diagram rf in gnd rf out gnd gnd gnd 1 2 3 4 6 5 function pin no. input 3 output/bias 6 ground 1, 2, 4, 5 specifications (1) parameter units min typ max operational bandwidth mhz dc 6000 test frequency mhz 900 gain db 15.6 input return loss db 18 output return loss db 18 output p1db dbm +13.4 output ip3 (2) dbm +26.4 output ip2 dbm +37 noise figure db 3.4 test frequency mhz 1900 gain db 13.5 14.5 15.5 output p1db dbm +12.2 output ip3 (2) dbm +24.8 device voltage v 4.23 device current ma 35 1. test conditions: . t = 25 oc, supply voltage = +5 v, r bias = 22.1 , 50 system. 2. 3oip measured with two tones at an output power of -2 db m/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate t he 3oip using a 2:1 rule. absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +125 c dc voltage +4.5 v rf input power (continuous) +10 dbm junction temperature +250 c operation of this device above any of these parameters m ay cause permanent damage. typical performance (1) parameter units typical frequency mhz 500 900 1900 2140 s21 db 15.9 15.6 14.5 14.2 s11 db -18 -18 -18 -18 s22 db -20 -18 -18 -15 output p1db dbm +13.2 +13.4 +12.2 +11.7 output ip3 dbm +26.6 +26.4 +24.8 +24.3 noise figure db 3.3 3.4 3.6 3.6 ordering information part no. description ag302-63g ingap hbt gain block (lead-free/green/rohs-compliant sot-363 package) ag302-63pcb 700 ? 2400 mhz fully assembled eval. bo ard
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 5 january 2007 ag302-63 ingap hbt gain block typical device rf performance supply bias = +5 v, r bias = 22.1 ? , i cc = 35 ma frequency mhz 100 500 900 1900 2140 2400 3500 5800 s21 db 16.0 15.9 15.6 14.5 14.2 13.9 12.5 9.2 s11 db -18 -18 -18 -18 -18 -18 -15 -11 s22 db -20 -20 -18 -18 -15 -15 -14 -8 output p1db dbm +13.5 +13.2 +13.4 +12.2 +11.7 +11.6 +9.5 output ip3 dbm +26.6 +26.6 +26.4 +24.8 +24.3 +23.9 noise figure db 3.3 3.3 3.4 3.6 3.6 3.7 1. test conditions: t = 25 oc, supply voltage = +5 v, devic e voltage = 4.23 v, rbias = 22.1 , icc = 35 ma typical, 50 system. 2. 3oip measured with two tones at an output power of -2 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 3. data is shown as device performance only. actual imp lementation for the desired frequency band will be determi ned by external components shown in the application circu it. gain vs. frequency 6 8 10 12 14 16 0 1 2 3 4 frequency (ghz) g a in (d b ) -40 c +25 c +85 c return loss -40 -30 -20 -10 0 0 1 2 3 4 5 6 frequency (ghz) s11, s22 (db) s11 s22 i-v curve 0 10 20 30 40 50 60 3.0 3.5 4.0 4.5 device voltage (v) device current (ma) optimal operating point output ip3 vs. frequency 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 frequency (ghz) oip3 (dbm) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 (dbm) -40c +25c +85c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) n f (d b ) -40 c +25 c +85 c p1db vs. frequency 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) p1db (dbm) -40 c +25 c +85 c output power / gain vs. input power frequency = 900 mhz 6 8 10 12 14 16 -20 -16 -12 -8 -4 0 4 input power (dbm) g a in ( d b ) -4 0 4 8 12 16 o u tp u t p o w e r (d b m ) output power gain output power / gain vs. input power frequency = 2000 mhz 4 6 8 10 12 14 -20 -16 -12 -8 -4 0 4 input power (dbm) g a in ( d b ) -4 0 4 8 12 16 o u tp u t p o w e r (d b m ) output power gain
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 5 january 2007 ag302-63 ingap hbt gain block typical device rf performance (cont?d) supply bias = +6 v, r bias = 51 ? , i cc = 35 ma gain vs. frequency 6 8 10 12 14 16 0 1 2 3 4 frequency (ghz) g a in (d b ) -40 c +25 c +85 c output ip3 vs. frequency 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 frequency (ghz) oip3 (dbm) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 (dbm) -40c +25c +85c p1db vs. frequency 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) p1db (dbm) -40 c +25 c +85 c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) n f (d b ) -40 c +25 c +85 c typical device rf performance supply bias = +8 v, r bias = 108 ? , i cc = 35 ma gain vs. frequency 6 8 10 12 14 16 0 1 2 3 4 frequency (ghz) g a in (d b ) -40 c +25 c +85 c output ip3 vs. frequency 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 frequency (ghz) oip3 (dbm) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 (dbm) -40c +25c +85c p1db vs. frequency 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) p1db (dbm) -40 c +25 c +85 c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) n f (d b ) -40 c +25 c +85 c
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 5 january 2007 ag302-63 ingap hbt gain block application circuit recommended component values reference frequency (mhz) designator 50 500 900 1900 2200 2500 3500 l1 820 nh 220 nh 68 nh 27 nh 22 nh 18 nh 15 nh c1, c2, c4 .018 f 1000 pf 100 pf 68 pf 68 pf 56 pf 39 pf 1. the proper values for the components are dependent upon the intended frequency of operation. 2. the following values are contained on the evaluation board to achieve optimal broadband performance: ref. desig. value / type size l1 39 nh wirewound inductor 0603 c1, c2 56 pf chip capacitor 0603 c3 0.018 f chip capacitor 0603 c4 do not place r1 22.1 1% tolerance 0805 recommended bias resistor values s upply voltage r1 value s ize 5 v 22.1 ohms 0603 6 v 51 ohms 0805 7 v 80 ohms 1206 8 v 108 ohms 1210 9 v 137 ohms 1210 10 v 166 ohms 1210 12 v 223 ohms 2010 the proper value for r1 is dependent upon the supply voltage and allows for bias stability over temperature. wj recommends a minimum supply bias of +5 v. a 1% tolerance resistor is recommended. typical device data s-parameters (v device = +4.23 v, i cc = 35 ma, t = 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -19.85 -177.05 15.79 177.89 -19.50 1.85 -22.57 - 9.39 250 -19.98 175.72 15.72 170.42 -19.97 1.77 -22.62 - 20.70 500 -18.01 168.09 15.61 160.75 -19.89 -1.49 -25.70 -57.42 750 -18.03 161.31 15.46 151.46 -19.75 -0.83 -23.67 -81.31 1000 -18.40 155.28 15.23 142.64 -20.03 -5.40 -21.92 -97.33 1250 -18.41 151.47 15.04 133.43 -19.57 -3.15 -20.29 -113.22 1500 -18.66 151.02 14.72 124.92 -19.70 -3.55 -19.00 -123.83 1750 -19.00 148.77 14.42 116.42 -19.61 -2.45 -17.99 -133.36 2000 -19.53 143.58 14.09 108.45 -19.21 -4.88 -17.12 -142.08 2250 -20.76 113.17 13.77 100.67 -19.05 -5.29 -15.05 -130.60 2500 -20.87 111.03 13.52 95.18 -19.25 -9.57 -15.35 -142.08 2750 -19.68 123.77 13.23 87.31 -18.88 -8.74 -15.64 -156.85 3000 -19.28 129.86 12.90 79.66 -18.52 -7.78 -15.96 -175.61 3250 -17.79 131.49 12.55 72.44 -18.46 -10.45 -15.54 163.89 3500 -15.90 129.32 12.20 64.86 -18.38 -12.94 -14.38 142.50 3750 -14.24 123.22 11.76 57.50 -18.15 -16.94 -12.52 126.50 4000 -12.67 119.37 11.34 49.91 -17.95 -17.17 -10.93 117.72 4250 -11.41 115.92 10.89 43.03 -17.83 -21.16 -9.42 109.93 4500 -10.59 112.56 10.41 36.71 -17.67 -22.91 -8.57 104.82 4750 -10.10 109.83 9.99 30.18 -17.43 -25.99 -7.86 1 02.35 5000 -9.85 106.48 9.64 24.37 -17.45 -26.81 -7.45 10 2.33 5250 -10.24 105.44 9.33 19.39 -17.45 -29.65 -7.63 1 02.18 5500 -10.79 104.94 9.06 14.78 -16.94 -30.74 -7.77 1 03.04 5750 -11.50 106.52 8.93 9.92 -16.70 -31.15 -8.37 10 4.38 6000 -12.41 105.88 8.77 4.74 -16.46 -33.40 -9.03 10 3.86 device s-parameters are available for download on the websit e at: http://www.wj.com c1 blocking capacitor rf out l1 rf choke c3 0.018 f r1 bias resistor rf in c4 bypass capacitor c2 blocking capacitor vcc icc = 35 ma ag302-63
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 5 january 2007 ag302-63 ingap hbt gain block mechanical information this package is lead-free/green/rohs-compliant. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the pla ting material on the leads is annealed matte tin ov er copper. outline drawing land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance, rth (1) 325 c / w junction temperature, tj (2) 133 c 1. the thermal resistance is referenced from the ho ttest part of the junction to the ground pin (pin 4). 2. this corresponds to the typical biasing conditio n of +4.23v, 35 ma at an 85 c case temperature. a minimum mttf of 1 million hours is achieved for junction temperatures below 177 c. product marking the component will be marked with an ?i? designator followed by a two-digit numeric lot code on the top surface of the package. the obsolete tin-lead package is marked with a ?d? designator followed by a two-digit numeric lot code on the top surface of the package. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. mttf vs. gnd lead temperature 1 10 100 1000 10000 60 70 80 90 100 110 120 ground lead temperature (c) mttf (million hrs)
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