View AUIRF7665S2_9038266.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? AUIRF7665S2tr base part number ? package type ? standard pack form quantity AUIRF7665S2 directfet small can tape and reel 4800 AUIRF7665S2tr orderable part number ? automotive grade v (br)dss 100v r ds(on) typ. 51m ? r g (typical) 3.5 ? max. 62m ? q g (typical) 8.3nc ? directfet ? isometric ? sb automotive directfet ? power mosfet ? applicable directfet ? outline and substrate outline ? sb sc m2 m4 l4 l6 l8 description the AUIRF7665S2 combines the latest automotive hexfet ? power mosfet silicon technology with the advanced directfet ? packaging platform to produce a best in class part for automotive class d audio amplifier applications. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or c onvection soldering techniques, wh en application note an-1035 is followed regarding the manufacturing methods and processes. the directfet ? package allows dual sided cooling to maximize thermal transfer in automotive power systems. this hexfet ? power mosfet optimizes gate charge, body diode reverse recove ry and internal gate resistance to improve key class d audio amplifier performance factors such as effici ency, thd and emi. moreover the directfet ? packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded soic packages which improves em i performance by reducing the voltage ringi ng that accompanies current transients. these features combine to make this mosfet a highly desirabl e component in automotive class d audio amplifier systems. absolute maximum ratings stresses beyond those listed under ?absolut e maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. parameter max. units v ds drain-to-source voltage 100 v v gs gate-to-source voltage 20 i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) ? 14.4 a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) ? 10.2 i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) ? 4.1 i dm pulsed drain current ? 58 p d @t c = 25c power dissipation ? 30 w p d @t a = 25c power dissipation ? 2.4 e as single pulse avalanche energy (thermally limited) ? 37 mj e as (tested) single pulse avalanche energy ? 56 i ar avalanche current ? a e ar repetitive avalanche energy ? mj t p peak soldering temperature 270 c ? t j operating junction and -55 to + 175 t stg storage temperature range see fig. 16, 17, 18a, 18b i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 77 1 2015-10-5 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? advanced process technology ? optimized for class d audio amplifier applications ? low rds(on) for improved efficiency ? low qg for better thd and improved efficiency ? low qrr for better thd and lower emi ? low parasitic inductance for reduced ringing and lower emi ? delivers up to 100w per channel into 8 ? with no heatsink ? dual sided cooling ? 175c operating temperature ? repetitive avalanche capability for robustness and reliability ? lead free, rohs and halogen free ?? automotive qualified *
? AUIRF7665S2tr 2 2015-10-5 thermal resistance symbol parameter typ. max. units r ? ja junction-to-ambient ? ??? 63 r ? ja junction-to-ambient ? 12.5 ??? r ? ja junction-to-ambient ? 20 ??? r ? j-can junction-to-can ?? ??? 5.0 r ? j-pcb junction-to-pcb mounted 1.4 ??? linear derating factor ? 0.2 w/c c/w ? static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 51 62 m ?? v gs = 10v, i d = 8.9a ? v gs(th) gate threshold voltage 3.0 4.0 5.0 v v ds = v gs , i d = 25a ? v gs(th) / ? t j gate threshold voltage coefficient ??? -13 ??? mv/c gfs forward transconductance 8.8 ??? ??? s v ds = 25v, i d = 8.9a r g internal gate resistance ??? 3.5 5.0 ?? i dss drain-to-source leakage current ??? ??? 5.0 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 8.3 13 nc ? v ds = 50v q gs1 gate-to-source charge ??? 1.9 ??? v gs = 10v q gs2 gate-to-source charge ??? 0.77 ??? i d = 8.9a q gd gate-to-drain ("miller" ) charge ??? 3.2 ??? see fig. 11 q godr gate charge overdrive ??? 2.4 ??? q sw switch charge (q gs2 + q gd ) ??? 4.0 ??? q oss output charge ??? 4.7 ??? nc v ds = 16v, v gs = 0v t d(on) turn-on delay time ??? 3.8 ??? ns v dd = 50v t r rise time ??? 6.4 ??? i d = 8.9a t d(off) turn-off delay time ??? 7.1 ??? r g = 6.8 ? t f fall time ??? 3.6 ??? v gs = 10v ? c iss input capacitance ??? 515 ??? pf v gs = 0v c oss output capacitance ??? 110 ??? v ds = 25v c rss reverse transfer capacitance ??? 30 ??? ? = 1.0 mhz c oss output capacitance ??? 530 ??? v gs = 0v, v ds = 1.0v, ? = 1.0 mhz c oss output capacitance ??? 70 ??? v gs = 0v, v ds = 80v, ? = 1.0 mhz c oss output capacitance ??? 115 ??? v gs = 0v, v ds = 0 to 80v notes ? through ? are on page 3
? AUIRF7665S2tr 3 2015-10-5 diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 14.4 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 8.9a, v gs = 0v ? t rr ? reverse recovery time ??? 33 ??? ns t j = 25c, i f = 8.9a, v dd = 25v q rr reverse recovery charge ??? 38 ??? nc dv/dt = 100a/s ? 58 ? surface mounted on 1 in. square cu board (still air). ? mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). ? mounted to a pcb with small clip heatsink (still air) ? click on this section to link to the appropriate technical paper. ? click on this section to link to the directfet ? website. ? surface mounted on 1 in. square cu board, steady state. ? t c measured with thermocouple mounted to top (drain) of part. ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.944mh, r g = 25 ? , i as = 8.9a. ? pulse width ? 400s; duty cycle ? 2%. ? used double sided cooling, mounting pad with large heatsink. ? mounted on minimum footprint full size board with metalized back and with small clip heat sink. ? r ? is measured at t j of approximately 90c. d s g
? AUIRF7665S2tr 4 2015-10-5 fig. 3 typical on-resistance vs. gate voltage fig. 1 typical output characteristics fig 5. transfer characteristics fig 6. normalized on-resistance vs. temperature fig. 2 typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v ? 60s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 6 7 8 9 10 11 12 13 14 15 v gs, gate -to -source voltage (v) 40 60 80 100 120 140 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 8.9a t j = 25c t j = 125c 0 10 20 30 40 i d , drain current (a) 40 80 120 160 200 240 280 320 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v ds = 25v ? fig. 4 typical on-resistance vs. drain current
? AUIRF7665S2tr 5 2015-10-5 ? fig 11. typical gate charge vs. gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.5 3.5 4.5 5.5 6.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a id = 250a id = 1.0ma d = 1.0a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v gs = 0v 024681012141618 i d ,drain-to-source current (a) 0 2 4 6 8 10 12 14 16 18 20 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width fig. 7 typical threshold voltage vs. junction temperature 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 8. typical source-drain diode forward voltage 024681012 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 8.9a fig 9. typical forward trans conductance vs. drain current 25 50 75 100 125 150 175 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 i d , d r a i n c u r r e n t ( a ) fig 10. typical capacitance vs. drain-to-source voltage
? AUIRF7665S2tr 6 2015-10-5 fig 16. typical avalanche current vs. pulse width fig 14. maximum avalanche energy vs. temperature fig 15. maximum effective transient thermal impedance, junction-to-case 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.64a 3.04a bottom 8.90a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 0.49687 0.000119 0.00517 8.231486 2.55852 0.018926 1.94004 0.002741 ri (c/w) ? i (sec) ? fig 13. maximum safe operating area 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
? AUIRF7665S2tr 7 2015-10-5 notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 15) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18a. unclamped inductive test circuit fig 18b. unclamped inductive waveforms fig 19a. gate charge test circuit fig 19b. gate charge waveform vdd ? fig 20a. switching time test circuit fig 20b. switching time waveforms 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 30 35 40 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 8.9a fig 17. maximum avalanche energy vs. temperature
? AUIRF7665S2tr 8 2015-10-5 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ directfet ? board footprint, sb (small size can). please see directfet ? application note an-1035 for all details regarding the assembly of directfet ? . this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source d gs d d d cl
? AUIRF7665S2tr 9 2015-10-5 directfet ? outline dimension, sb outline (small size can). please see directfet ? application note an-1035 for all details regarding the assembly of directfet ? . this includes all recommendations for stencil and substrate designs. directfet ? part marking note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? AUIRF7665S2tr 10 2015-10-5 directfet ? tape & reel dimension (showing component orientation) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts, ordered as AUIRF7665S2tr. b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f a d
? AUIRF7665S2tr 11 2015-10-5 ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification leve l is granted by extension of the higher automotive level. moisture sensitivity level dfet2 small can msl1 esd machine model class b aec-q101-002 human body model ? class 2 aec-q101-001 charged device model class iv aec-q101-005 rohs compliant yes revision history date comments 10/5/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ?? updated tape and reel option on page 10

▲Up To Search▲

Price & Availability of AUIRF7665S2

	To Download AUIRF7665S2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .