q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U bv dss = 700 v r ds(on) typ
i d = 4.8 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 16.0 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested features absolute maximum ratings t c =25 e unless otherwise specified hfd6n70u / HFU6N70U 700v n-channel mosfet symbol parameter value units v dss drain-source voltage 700 v i d drain current ? continuous (t c = 25 e ) 4.8 a drain current ? continuous (t c = 100 e ) 3.0 a i dm drain current ? pulsed (note 1) 19.2 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 170 mj i ar avalanche current (note 1) 4.8 a e ar repetitive avalanche energy (note 1) 9.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 e )* 2.5 w power dissipation (t c = 25 e ) - derate above 25 e 95 w 0.76 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e 1.gate 2. drain 3. source thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 1.31 e /w r ja junction-to-ambient* -- 50 r ja junction-to-ambient -- 110 august 2015 2 1 2 3 1 3 d-pak i-pak hfd6n70u HFU6N70U * when mounted on the minimum pad size recommended (pcb mount)
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=8.7mh, i as =6.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t c =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 4.8 a i sm pulsed source-drain diode forward current -- -- 19.2 v sd source-drain diode forward voltage i s = 4.8 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 6.0 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 275 -- qrr reverse recovery charge -- 2.1 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.4 a -- 1.8 2.3 ? on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 700 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 3 , referenced to 25 e -- 0.6 -- v/ e i dss zero gate voltage drain current v ds = 700 v, v gs = 0 v -- -- 1 3 v ds = 560 v, t c = 125 e -- -- 10 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 870 1130 ? c oss output capacitance -- 80 105 ? c rss reverse transfer capacitance -- 10 13 ? dynamic characteristics t d(on) turn-on time v ds = 350 v, i d = 6.0 a, r g = 25 ? (note 4,5) -- 30 60 t r turn-on rise time -- 40 80 t d(off) turn-off delay time -- 80 160 t f turn-off fall time -- 40 80 q g total gate charge v ds = 560 v, i d = 6.0 a, v gs = 10 v (note 4,5) -- 16.0 21.0 nc q gs gate-source charge -- 5.0 -- nc q gd gate-drain charge -- 4.5 -- nc switching characteristics source-drain diode maximum ratings and characteristics package marking and odering information device marking week marking package packing quantity rohs status hfd6n70u ywwx to-252 reel 2,500 pb free hfd6n70u ywwxg to-252 reel 2,500 halogen free HFU6N70U ywwx to-251 tube 80 pb free HFU6N70U ywwxg to-251 tube 80 halogen free
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 0 5 10 15 20 0 2 4 6 8 10 12 v ds = 350v v ds = 140v v ds = 560v
note : i d = 6.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 051015 0 2 4 6 v gs = 20v v gs = 10v
note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 300 600 900 1200 1500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 10 0 10 1 10 -1 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 246810 0.1 10 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0
note : 1. v gs = 10 v 2. i d = 2.4 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] t 2 t 1 p dm 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 1.31 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 100 ms 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U package dimension k t w h r g o { v t y \ y h p g
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U package dimension p t w h r g o { v t y \ x h p g 7.0 0.1 / 9.5 0.2
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U package dimension p t w h r g o { v t y \ x h g y u \ ? ? g z ? ? ? ? g s ? ? ? p g
q?v~zy??q?v?_rg]r|?|qcabfq hfd6n70u_HFU6N70U package dimension p t w h r g o { v t y \ x i g y u \ ? ? g z ? ? ? ? g s ? ? ? p g
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