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  to ? 92 1.emitter 2.base 3.colle ctor jiangsu changjiang electron ics technology co., l td to-92 plastic-encap sulate t ransistors MPSL51 transistor (pn p ) features z general purpose amplifier maximum ratings (t a =25 unless otherwis e noted) electrical characteristics (t a =25 unless otherwis e specified) parameter symbol test conditions min typ max unit collector -b ase breakdown voltage v (br)cbo i c = -0.1ma,i e =0 -100 v collector -emitter b reakdown voltage v (br)ceo * i c =-1ma,i b =0 -100 v emitter-bas e breakdown voltage v (br) ebo i e =-0.01ma,i c =0 -4 v collector cu t-off current i cbo v cb =-50v ,i e =0 -1 a emitter cut-off current i ebo v eb =-3v,i c =0 -0.1 a dc curren t g ain h fe * v ce =-5v, i c =-5 0 ma 40 250 v ce(sat )(1 ) * i c =-10ma,i b =-1ma -0.25 v collector -emitter satu ration voltage v ce(sat )(2 ) * i c =-50ma,i b =-5ma -0.3 v v be(sat)( 1 ) * i c =-10ma,i b =-1ma -1.2 v base-emitte r satu ration voltage v be(sat)( 2 ) * i c =-50ma,i b =-5ma -1.2 v tra n sition frequency f t v ce =10v,i c =10ma, f=20mhz 60 mhz collector o utput capacitance c ob v cb =10v,i e =0, f=1mhz 8 pf *pulse test: pul se width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo coll ector-base v oltage -100 v v ceo collector-emitter vo lt age -100 v v ebo emitter-base v olt ag e -4 v i c collector curre n t 200 ma p c coll ector pow e r dissipation 625 mw r ja thermal resistance f r om junction to ambient 200 / w t j junction t e mperature 150 t stg storage t e mperature -55~+150 www.cj-elec.com 1 c , dec,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com , dec ,2015
to-92 7 dshdqg5hho zzzfmhohffrp 3  c,dec,2015


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