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  this is information on a product in full production. may 2014 docid16958 rev 4 1/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 n-channel 950 v, 1 typ., 9 a zener-protected supermesh? 5 power mosfets in dpak, to-220, to-247 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? dpak 950 v worldwide best r ds(on) ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these n-channel zener-protected power mosfets are designed using st?s revolutionary avalanche-rugged very high voltage supermesh? 5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. dpak 1 3 tab 1 2 3 tab to-220 1 2 3 to-247 3 2 1 tab ipak d(2, tab) g(1) s(3) am01476v1 order codes v ds r ds(on) max. i d p tot std6n95k5 950 v 1.25 9 a 90 w stp6n95k5 stw6n95k5 STU6N95K5 table 1. device summary order codes marking packages packaging std6n95k5 6n95k5 dpak tape and reel stp6n95k5 to-220 tube stw6n95k5 to-247 STU6N95K5 ipak www.st.com
contents std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 2/23 docid16958 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dpak, std6n95k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, stp6n95k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-247, stw6n95k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 ipak, STU6N95K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid16958 rev 4 3/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 9 a i d drain current (continuous) at t c = 100 c 6 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 36 a p tot total dissipation at t c = 25 c 90 w i ar (2) 2. pulse width limited by t jmax. max current during repetitive or single pulse avalanche 3a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 90 mj dv/dt (3) 3. i sd 9 a, di/dt 100 a/ s, v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 760 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit to-220, ipak dpak to-247 r thj-case thermal resistance junction-case max 1.39 c/w r thj-amb thermal resistance junction-amb max 62.5 50 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w
electrical characteristics std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 4/23 docid16958 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 950 v i dss zero gate voltage drain current v gs = 0, v ds = 950 v 1 a v gs = 0, v ds = 950 v, tc=125 c 50 a i gss gate body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3 a 1 1.25 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds =100 v, f=1 mhz -450- pf c oss output capacitance - 30 - pf c rss reverse transfer capacitance -1.6- pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v -45-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -19-pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 7 - q g total gate charge v dd = 760 v, i d = 6 a, v gs =10 v, (see figure 18 ) -13-nc q gs gate-source charge - 3 - nc q gd gate-drain charge - 7 - nc
docid16958 rev 4 5/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 electrical characteristics 23 the built-in back-to-back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 475 v, i d = 3 a, r g =4.7 , v gs =10 v (see figure 20 ) -12-ns t r rise time - 12 - ns t d(off) turn-off delay time - 33 - ns t f fall time - 21 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 9 a i sdm source-drain current (pulsed) - 36 a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs =0 - 1.6 v t rr reverse recovery time i sd = 6 a, v dd = 60 v di/dt = 100 a/ s, (see figure 19 ) - 372 ns q rr reverse recovery charge - 4 c i rrm reverse recovery current - 22 a t rr reverse recovery time i sd = 6 a,v dd = 60 v di/dt=100 a/ s, tj=150 c (see figure 19 ) - 522 ns q rr reverse recovery charge - 5 c i rrm reverse recovery current - 20 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 6/23 docid16958 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse am07105v1 figure 4. safe operating area for to-220 and to-247 figure 5. thermal impedance for to-220 and to-247 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse am07107v1 figure 6. output characteristics figure 7. transfer characteristics i d 6 4 2 0 0 10 v ds (v) 20 (a) 5 15 25 8 10 5v 6v 7v v gs =10v 12 am07108v1 i d 6 4 2 0 0 4 v gs (v) 8 (a) 2 6 8 v ds =15v am07109v1
docid16958 rev 4 7/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 electrical characteristics 23 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =760v i d =6a 10 12 300 200 100 0 400 500 v ds (v) 600 700 12 14 v ds am07110v1 r ds(on) 0.93 0.91 0.89 0.87 0.5 1.5 i d (a) (ohm) 1.0 2.0 0.95 0.97 0.99 1.01 v gs =10v 2.5 3.0 1.03 am07111v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am07112v1 eoss 6 4 2 0 0 100 vds(v) (j) 400 8 200 300 10 12 500 600 14 16 18 1 20 22 700 800 900 am07113v1 v gs(th) 0.7 0.6 0.5 0.4 -75 t j (c) (norm) -25 0.8 75 25 125 0.9 1.0 1.1 1.2 i d =100 a am07114v1 r ds(on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 v gs =10v am07115v1
electrical characteristics std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 8/23 docid16958 rev 4 figure 14. source-drain diode forward characteristics figure 15. normalized v (br)dss vs temperature figure 16. maximum avalanche energy vs starting tj v sd 2.0 4.0 i sd (a) (v) 3.0 5.0 6.0 0.55 0.65 0.75 0.85 0.95 t j =-50c t j =150c t j =25c am07118v1 v (br)dss -75 t j (c) (norm) -25 75 25 125 0.7 0.8 0.9 1.0 1.1 1.2 i d =1 ma am07116v1 e as 0 40 t j (c) (mj) 20 100 60 80 0 10 20 30 40 120 140 50 60 70 80 90 100 i d =3 a v dd =50 v am07117v1
docid16958 rev 4 9/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 test circuits 23 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 10/23 docid16958 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid16958 rev 4 11/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 package mechanical data 23 4.1 dpak, std6n95k5 figure 23. dpak (to-252) type a drawing b2
package mechanical data std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 12/23 docid16958 rev 4 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid16958 rev 4 13/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 package mechanical data 23 figure 24. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters )3b2
package mechanical data std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 14/23 docid16958 rev 4 4.2 to-220, stp6n95k5 figure 25. to-220 type a drawing bw\sh$b5hyb7
docid16958 rev 4 15/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 package mechanical data 23 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 16/23 docid16958 rev 4 4.3 to-247, stw6n95k5 figure 26. to-247 drawing 0075325_g
docid16958 rev 4 17/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 package mechanical data 23 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 18/23 docid16958 rev 4 4.4 ipak, STU6N95K5 figure 27. ipak (to-251) drawing 0068771_k
docid16958 rev 4 19/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 package mechanical data 23 table 12. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
packaging mechanical data std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 20/23 docid16958 rev 4 5 packaging mechanical data figure 28. tape for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid16958 rev 4 21/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 packaging mechanical data 23 figure 29. reel for dpak (to-252) table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 22/23 docid16958 rev 4 6 revision history table 14. document revision history date revision changes 12-jan-2010 1 first release. 01-jul-2010 2 document status promoted from preliminary data to datasheet. 31-aug-2012 3 inserted new device in ipak. updated table 1: device summary , table 2: absolute maximum ratings , and table 3: thermal data . updated section 4: package mechanical data and section 5: packaging mechanical data . minor text changes in the cover page. 16-may-2014 4 ? the part number stf6n95k5 has been moved to a separate datasheet ? added: mosfet dv/dt ruggedness parameter in table 2 ? updated: section 4: package mechanical data ? minor text changes
docid16958 rev 4 23/23 std6n95k5, stp6n95k5, stw6n95k5, STU6N95K5 23 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com


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