sot-23 plastic-encapsulate transistors CJ3420 n-channel enhancement mode field effect transistor description the CJ3420 uses advanced trench technology to provide excellent r ds(on) . this device is suitable for use as a uni-directional or bi-directional load switch . marking: r20 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 gate-source voltage v gs 12 v continuous drain current i d 6 pulsed drain current i dm 25 maximum body-diode continuous current i s 2 a power dissipation p d 0.35 w thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -55 ~+150 so t -23 1. gate 2. source 3. drain 1 of 3 sales@zpsemi.com www.zpsemi.com CJ3420
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 20 v gate-source leakage current i gss v ds =0v, v gs =12v 100 na zero gate voltage drain current i dss v ds =16v, v gs =0v 1.0 a gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.5 0.7 1.0 v v gs =10v, i d =6.0a 19 24 v gs =4.5v, i d =5.0a 22 27 v gs =2.5v, i d =4.0a 35 42 drain-source on-state resistance r ds(on) v gs =1.8v, i d =2.0a 74 m ? diode forward voltage v sd v gs =0v,i s =1a 0.75 1 v forward transconductance g f s v ds =5v, i d =3.8a 4 s dynamic parameters* input capacitance c iss 630 output capacitance c oss 164 reverse transfer capacitance c rss v ds =10v,v gs =0v,f =1mhz 137 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 1.5 ? switching parameters* turn-on delay time t d(on) 5.5 rise time t r 14 turn-off delay time t d(off) 29 fall time t f v gs =5v,v ds =10v, r l =1.7
, r gen =6
10.2 ns *these parameters have no way to verify. 2 of 3 sales@zpsemi.com www.zpsemi.com CJ3420
0.0 0.2 0.4 0.6 0.8 1.0 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 0 2 4 6 8 0 30 60 90 0 2 4 6 8 10 10 20 30 40 50 60 70 0 1 2 3 4 5 0 5 10 15 20 source current i s (a) source to drain voltage v sd (v) t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =25 pulsed i d =6a v gs r ds(on) on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) i s v sd t a =25 pulsed t a =25 pulsed t a =25 pulsed v gs =1.8v v gs =2.5v v gs =4.5v v gs =10v i d r ds(on) on-resistance r ds(on) (m ? ) drain current i d (a) output characteristics v gs =10v 4v 3v 2.5v 2v v gs =1.5v drain current i d (a) drain to source voltage v ds (v) 3 of 3 sales@zpsemi.com www.zpsemi.com CJ3420 b,may,2011
|
