nzt651 nzt651 npn current driver transistor notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 60 v v cbo collector-bas e voltage 80 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 4.0 a t j , t stg operating and storage j unction temperature range -55 to +150 c symbol characteristic max units *nzt651 p d total device dissipation derate above 25 c 1.2 9.7 w mw/ c r q ja thermal resistanc e, j unction to ambient 103 c/w b c c sot-223 e * device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . this device is designed for power amplifier, regulator and switching circuits where speed is important. sourced from process 4p. discrete power & signal technologies ? 1997 fairchild semiconductor corporation
nzt651 electrical characteristics ta = 25c unless otherwise noted off characteristics on characteristics* symbol parameter test conditions min max units h fe dc current gain i c = 50 ma, v ce = 2.0 v i c = 500 ma, v ce = 2.0 v i c = 1.0 a, v ce = 2.0 v i c = 2.0 a, v ce = 2.0 v 75 75 75 40 v ce( sat ) collector-emitter saturation voltage i c = 1.0 a, i b = 100 ma i c = 2.0 a, i b = 200 ma 0.3 0.5 v v v be( sat ) base-emitter saturation voltage i c = 1.0 a, i b = 100 ma 1.2 v v be( on ) base-emitter on voltage i c = 1.0 a, v ce = 2.0 v 1.0 v small signal characteristics dc typical characteristics v (br)ceo collector-emitter sustaining voltage i c = 10 ma, i b = 060v v (br)cbo collector-bas e breakdown voltage i c = 100 m a, i e = 0 80 v v (br) ebo emitter-base breakdown voltage i e = 100 m a, i c = 0 5.0 v i cbo collector-cutoff current v cb = 80 v, i e = 0 100 na i ebo emitter-cutoff current v eb = 4.0 v, i c = 0 0.1 m a f t current gain - bandwidth product i c = 50 ma, v ce = 5.0 v, f = 100 mhz 75 mhz * pulse test: pulse width 300 m s, duty cycle 2.0% typical pulsed current gain vs collector current 0.01 0.1 1 10 0 50 100 150 200 i - collector current (a) h - typical pulsed current gain fe - 40 oc 25 c c v = 5v ce 125 c collector-emitter saturation voltage vs collector current p4p 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 i - collector current (a) v - collector-emitter voltage (v) cesat c b b = 10 - 40 oc 25 c 125 c npn current driver transistor (continued)
nzt651 dc typical characteristics (continued) ac typical characteristics base-emitter saturation voltage vs collector current 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 i - collector current (a) v - base- emitter voltage (v) besat c b b = 10 - 40 oc 25 c 125 c base-emitter on voltage vs collector current p4p 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i - collector current (a) v - base-emitter on voltage (v) be(on) c v = 5v ce - 40 oc 25 c 125 c collector-cutoff current vs ambient temperature p4p 25 50 75 100 125 150 0.01 0.1 1 10 100 t - ambient temperature ( c) i - collector current (na) a v = 50v cb o cbo npn current driver transistor (continued) junction capacitance vs. reverse bias voltage
nzt651 ac typical characteristics (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 temperature ( c) p - power dissipation (w) d o sot-223 npn current driver transistor (continued)
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