, o na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC2707 description ? collector-emitter breakdown voltage^-, = 180v(min ? high power dissipation ? complement to type 2sa1147 applications ? designed for power switching amplifier and general purpose applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc t, tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @tc=25"c junction temperature storage temperature value 180 180 5 15 5 150 150 -65-150 unit v v v a a w ?c t: '"'"'v-^bh^x^ ", pin 1. base [x^ 2. emitter t?l 3. collect or (case) ' to-3 package 2 r i ? v- 1 | r- i i ~*iu~d ?pl lk ?/!~rt\ ,/' ^ 4 ^-?--^ g b >sj^ ^y t | '-re=i nun [hm mih max a 3900 b 25 30 26.s7 c 7.80 6.5c d 0.30 1 ,10 e mo 160 (j_ 1092 h s4& k ::.a 1350 l 1675 170s ~n~ 19.?" 1962 i 400 433 v 4 30 4 50 n.i scnii-conduttors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to he bold accurate and reliable ;tt the lime of uoing (o press. i lm\e\er. n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i scmi-conduclors encuura.ues customers to verily that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC2707 electrical characteristics tj=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) icbo iebo hpe-1 hpe-2 fr parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= 50ma; ib= 0 lc= 1ma; ie=0 ie= 1ma; lc= 0 ic=10a;ib=1a vcb= 180v; ie= 0 veb= 5v; lc= 0 lc=1a;vce=5v lc= 5a ; vce= 5v lc=0.5a; vce=12v min 180 180 5 55 30 10 typ. max 3.0 100 100 160 unit v v v v ma ma mhz
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