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product specification www.jmnic.com silicon npn power transistors 2sd1651 description ? ? with to-3pml package ? built-in damper diode ? high breakdown voltage ? high speed switching applications ? for color tv horizontal output applications pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-3pml) and symbol absolute maximum ratings at tc=25 ?? symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v ebo emitter-base voltage open collector 6 v i c collector current 5 a p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? jm nic
product specification www.jmnic.com jm nic silicon npn power transistors 2sd1651 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a , i b =0 800 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.8a 3.0 5.0 v v besat emitter-base saturation voltage i c =4a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 | a i ces collector cut-off current v ces =1500v; r be = ?t 1.0 ma i ebo emitter cut-off current v eb =4v; i c =0 40 130 ma h fe dc current gain i c =1a ; v ce =5v 8 f t transition frequency i c =1a ; v ce =10v 3 mhz v f diode forward voltage i f =5a 2.0 v
product specification www.jmnic.com jm nic silicon npn power transistors 2sd1651 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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