DSA70C200HB preliminary low loss and soft recovery high performance schottky diode common cathode schottky diode gen 2 1 2 3 part number DSA70C200HB backside: cathode fav f vv 0.79 rrm 35 200 = v= v i= a 2x features / advantages: applications: package: very low vf extremely low switching losses low irm values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters to-247 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20131031b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSA70C200HB preliminary v = v symbol definition ratings typ. max. i r v i a v f 0.93 r 0.7 k/ w r min. 35 v rsm v 640 t = 25c vj t = c vj m a 7 v = v r t = 25c vj i = a f v t = c c 150 p tot 215 w t = 25c c r k/ w 35 200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 1.07 t = 25c vj 125 v f0 v 0.55 t = c vj 175 r f 4.8 m ? threshold voltage slope resistance for power loss calculation only a 125 v rrm v 200 max. repetitive reverse blocking voltage t = 25c vj c j 261 j unction capacitance v = v 24 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 550 a 200 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch schottky 200 0.25 ixys reserves the right to change limits, conditions and dimensions. 20131031b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSA70C200HB preliminary ratings product mar k in g date code part no. logo ixys abcd assembly code zyyww assembly line xxxxxxxxx d s a 70 c 200 hb part number diode schottky diode low vf common cathode to-247ad (3) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.2 mounting torque 0.8 t vj c 175 virtual junction temperature -55 weight g 6 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 i rms rms current 70 a per terminal 150 -55 to-247 delivery mode quantity code no. part number marking on product ordering 1 ) DSA70C200HB 509195 tube 30 DSA70C200HB standard t stg c 150 storage temperature -55 threshold voltage v 0.55 m ? v 0 max r 0 max slope resistance * 2.2 equivalent circuits for simulation t = vj i v 0 r 0 schottky 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131031b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSA70C200HB preliminary s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 3x b b4 2x e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 1 2 3 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. 20131031b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DSA70C200HB preliminary 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 0 10203040506070 0 10 20 30 40 50 60 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 0 40 80 120 160 200 0 10 20 30 40 50 60 70 80 i f(av) [a] t c [c] t [ms] 0 50 100 150 200 0 100 200 300 400 500 600 700 c t [pf] i f [a] v f [v] v r [v] z thjc [k/w] dc d= 0.5 i f(av) [a] p (av) [w] t vj = 150c 125c 25c t vj =25c fig. 1 maximum forward voltage drop characteristics fig. 3 typ. junction capacitance c t vs. reverse voltage v r fig. 4 avg: forward current i f(av) vs. case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to case d = dc 0.5 0.33 0.25 0.17 0.08 schottky ixys reserves the right to change limits, conditions and dimensions. 20131031b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
|
