? semiconductor components industries, llc, 2015 april, 2015 ? rev. 6 1 publication order number: bav70dxv6t1/d bav70dxv6, nsvbav70dxv6 monolithic dual switching diode common cathode features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (each diode) rating symbol value unit reverse voltage v r 100 vdc forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation, t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation, t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature range t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?4 @ minimum pad www. onsemi.com 3 cathode 4 anode 5 anode device package shipping ? ordering information sot?563 case 463a 1 marking diagram 6 cathode anode 1 2 anode bav70dxv6t1 a4 = specific device code m = month code = pb?free package a4 m 1 bav70dxv6t5g sot?563 (pb?free) 8000 / tape & reel (note: microdot may be in either location) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. NSVBAV70DXV6T5G sot?563 (pb?free) 8000 / tape & reel
bav70dxv6, nsvbav70dxv6 www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit off characteristics reverse breakdown voltage (note 2) (i (br) = 100 adc) v (br) 100 ? vdc reverse voltage leakage current (note 2) (v r = 25 vdc, t j = 150 c) (v r = 100 vdc) (v r = 70 vdc, t j = 150 c) i r ? ? ? 60 1.0 100 adc diode capacitance (note 2) (v r = 0, f = 1.0 mhz) c d ? 1.5 pf forward voltage (note 2) (i f = 1.0 madc) (i f = 10 madc) (i f = 50 madc) (i f = 150 madc) v f ? ? ? ? 715 855 1000 1250 mvdc reverse recovery time (note 2) r l = 100 (i f = i r = 10 madc, v r = 5.0 vdc, i r(rec) = 1.0 madc) (figure 1) t rr ? 6.0 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. for each individual diode while second diode is unbiased. notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit
bav70dxv6, nsvbav70dxv6 www. onsemi.com 3 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.0 0 v r , reverse voltage (volts) 0.9 0.8 0.7 0.6 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 2. forward voltage figure 3. leakage current figure 4. capacitance t a = -40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( a) curves applicable to each anode
bav70dxv6, nsvbav70dxv6 www. onsemi.com 4 package dimensions h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches sot?563, 6 lead case 463a issue f e m 0.08 (0.003) x b 6 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bav70dxv6t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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