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RGTV60TS65D 650v 30a field stop trench igbt *1 pulse width limited by t jmax. a diode forward current t c = 25c i f 56 a t c = 100c i f 30 a operating junction temperature t j ? 40 to +175 c storage temperature t stg ? 55 to +175 c power dissipation t c = 25c p d 194 w t c = 100c p d 97 w diode pulsed forward current i fp *1 120 a collector current t c = 25c i c 60 a t c = 100c i c 30 a pulsed collector current i cp *1 120 collector - emitter voltage v ces 650 v gate - emitter voltage v ges ? 30 v ? absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit packing code c11 pfc marking RGTV60TS65D ih ? packaging specifications type packaging tube ? applications reel size (mm) - solar inverter tape width (mm) - ups basic ordering unit (pcs) 450 welding 1) low collector - emitter saturation voltage 2) high speed switching & low switching loss 3) short circuit withstand time 2 s 4) built in very fast & soft recovery frd 5) pb - free lead plating ; rohs compliant ? features ? inner circuit ? outline v ces 650v to-247n i c(100c) 30a v ce(sat) (typ.) 1.5v p d 194w (1)(2)(3) (1) gate (2) collector (3) emitter *1 *1 built in frd (1) (2) (3) 1/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. data s heet
RGTV60TS65D ? thermal resistance ? igbt electrical characteristics (at t j = 25c unless otherwise specified) na 200 a thermal resistance igbt junction - case r (j-c) - - 0.77 c/w gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v -- parameter symbol 7.0 v v t j = 25c - 1.5 1.9 t j = 175c - 1.85 - collector - emitter saturation voltage v ce(sat) i c = 30a, v ge = 15v gate - emitter threshold voltage v ge(th) v ce = 5v, i c = 21.0ma 5.0 6.0 conditions values collector cut - off current i ces collector - emitter breakdown voltage bv ces i c = 10a, v ge = 0v 650 - - 10-- v ce = 650v, v ge = 0v unit min. typ. max. v c/w thermal resistance diode junction - case r (j-c) - - 1.17 parameter symbol values unit min. typ. max. 2/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? igbt electrical characteristics (at t j = 25c unless otherwise specified) v ge = 15v s v cc Q 360v t j = 25c short circuit withstand time t sc 2- - turn - off delay time mj turn - off switching loss e off reverse recovery - 0.50 - turn - on switching loss e on *e on includes diode - 0.63 - mj turn - off switching loss e off reverse recovery - 0.72 - t d(off) t j = 175c turn - on delay time - reverse bias safe operating area rbsoa i c = 120a, v cc = 520v full square - v p = 650v, v ge = 15v r g = 100?, t j = 175c - 121 - fall time t f inductive load - 80 - ns rise time t r v ge = 15v, r g = 10? -13- i c = 30a, v cc = 400v -32- turn - on switching loss e on *e on includes diode - 0.57 - t d(on) ns rise time t r v ge = 15v, r g = 10? -12- turn - off delay time t d(off) t j = 25c turn - on delay time t d(on) i c = 30a, v cc = 400v -33- - 105 - fall time t f inductive load - 40 nc gate - emitter charge q ge i c = 30a -14- gate - collector charge q gc v ge = 15v -24- -30- total gate charge q g v ce = 400v -64- parameter symbol conditions values unit min. typ. max. pf output capacitance c oes v ge = 0v -74- reverse transfer capacitance c res f = 1mhz input capacitance c ies v ce = 30v - 1730 - 3/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? igbt electrical characteristics (at t j = 25c unless otherwise specified) c t j = 25c diode peak reverse recovery current i rr i f = 30a - 10.4 - a diode reverse recovery charge q rr - 0.42 - j c t j = 175c diode reverse recovery energy e rr - 62.5 - j diode reverse recovery charge q rr - 0.95 - -ns diode reverse recovery energy e rr - 19.3 - diode reverse recovery time t rr - 155 ns diode peak reverse recovery current i rr i f = 30a - 8.1 - a diode reverse recovery time t rr -95- v cc = 400v v t j = 25c - 1.45 1.9 t j = 175c - 1.55 - values unit min. typ. max. di f /dt = 200a/s v cc = 400v di f /dt = 200a/s parameter symbol conditions diode forward voltage v f i f = 30a 4/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? electrical characteristic curves fig.2 collector current vs. case temperature collector current : i c [a] case temperature : tc [oc] fig.3 forward bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.4 reverse bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.1 power dissipation vs. case temperature power dissipation : p d [w] case temperature : tc [oc] 0 20 40 60 80 100 120 140 160 180 200 220 0 255075100125150175 0 20 40 60 80 100 120 140 160 0 200 400 600 800 t j Q 175oc v ge =15v 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 t j Q 175oc v ge R 15v 0.01 0.1 1 10 100 1000 1 10 100 1000 t c = 25oc single pulse 10 s 100 s 5/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? electrical characteristic curves fig.5 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.6 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.7 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.8 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] 0 20 40 60 80 100 120 012345 t j = 175oc v ge = 20v v ge = 10v v ge = 8v v ge = 15v v ge = 12v 0 20 40 60 80 100 120 012345 t j = 25oc v ge = 20v v ge = 12v v ge = 10v v ge = 8v v ge = 15v 0 10 20 30 40 50 60 024681012 v ce = 10v t j = 25oc t j = 175oc 0 1 2 3 4 25 50 75 100 125 150 175 i c = 60a i c = 15a i c = 30a v ge = 15v 6/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? electrical characteristic curves collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] switching time [ns] collector current : i c [a] fig.12 typical switching time vs. gate resistance switching time [ns] gate resistance : r g [ ? ] fig.9 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.10 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.11 typical switching time vs. collector current 0 5 10 15 20 5101520 t j = 25oc i c = 60a i c = 15a i c = 30a 0 5 10 15 20 5101520 t j = 175oc i c = 60a i c = 15a i c = 30a 1 10 100 1000 0 102030405060 t f v cc =400v, v ge =15v r g =10 ? , t j =175oc inductive oad t d(off) t d(on) t r 1 10 100 1000 0 1020304050 t f t d(off) v cc =400v, i c =30a v ge =15v, t j =175oc inductive oad t d(on) t r 7/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? electrical characteristic curves fig.13 typical switching energy losses vs. collector current switching energy losses [mj] collector current : i c [a] fig.14 typical switching energy losses vs. gate resistance switching energy losses [mj] gate resistance : r g [ ? ] fig.15 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] fig.16 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 0.01 0.1 1 10 0 102030405060 e off v cc =400v, v ge =15v r g =10 ? , t j =175oc inductive oad e on 1 10 100 1000 10000 0.01 0.1 1 10 100 cies f=1mhz v ge =0v t j =25oc coes cres 0.01 0.1 1 10 0 1020304050 e off e on v cc =400v, i c =30a v ge =15v, t j =175oc inductive oad 0 5 10 15 0 10203040506070 v cc =400v i c =30a t j =25oc 8/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? electrical characteristic curves fig.17 typical diode forward current vs. forward voltage forward current : i f [a] forward voltage : v f [v] fig.18 typical diode reverse recovery time vs. forward current reverse recovery time : t rr [ns] forward current : i f [a] fig.19 typical diode reverse recovery current vs. forward current reverse recovery current : i rr [a] forward current : i f [a] fig.20 typical diode reverse recovery charge vs. forward current reverse recovery charge : q rr [c] forward current : i f [a] 0 20 40 60 80 100 120 00.511.522.53 t j = 175oc t j = 25oc 0 100 200 300 400 0 102030405060 v cc =400v di f /dt=200a/s inductive oad t j = 175oc t j = 25oc 0 5 10 15 20 0 102030405060 t j = 175oc t j = 25oc v cc =400v di f /dt=200a/s inductive oad 0 0.5 1 1.5 2 2.5 0 102030405060 v cc =400v di f /dt=200a/s inductive oad t j = 175oc t j = 25oc 9/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? electrical characteristic curves 0.001 0.01 0.1 1 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse 0.001 0.01 0.1 1 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc +t c t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc +t c transient thermal impedance : z thjc [oc/w] pulse width : t1[s] transient thermal impedance : z thjc [oc/w] pulse width : t1[s] fig.21 typical igbt transient thermal impedance fig.22 typical diode transient thermal impedance c1 c2 c3 r1 r2 r3 557.2u 1.609m 537.6m 194.6m 283.3m 2.100m c1 c2 c3 r1 r2 r3 356.0u 1.250m 6.974m 172.8m 273.3m 273.9m 10/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGTV60TS65D ? inductive load switching circuit and waveform vg d.u.t. d.u.t. fig.23 inductive load circuit i f di f /dt i rr t rr , q rr fig.25 diode reverce recovery waveform fig.24 inductive load waveform t r t off 10% 90% t f t d(on) t d(off) gate drive time v ce(sat) 10 90% t on v ge i c v ce e on 10 e off 11/11 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
r1102 a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14)
datasheet part number RGTV60TS65D package to-247n unit quantity 450 minimum package quantity 30 packing type tube constitution materials list inquiry rohs yes RGTV60TS65D - web page

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