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| Datasheet File OCR Text: |
| i nchange semiconductor isc product specificat ion isc w ebsite is registered trademark 1 isc silicon pn p power transistor 2 sa1 352 description high collector - emitter breakdown voltage - v ( br ) ceo = - 20 0v ( min ) complement to t ype 2 sc 3416 applications designed for color tv chroma output, high - voltage driver applications. a bsolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector - b ase v oltage - 20 0 v v ceo collector - e mitter v oltage - 20 0 v v ebo emitter - b ase v oltage - 5 .0 v i c collector c urrent - continuous - 0.1 a i c m collector c urrent - p eak - 0.2 a p c collector p ower d issipat i on @ t a =25 1. 2 w total p ower d issipat i on @ t c =25 5 t j junction temperature 150 t stg storage temperature range - 5 5~ 150
i nchange semiconductor isc product specificat ion isc w ebsite is registered trademark 2 isc silicon pnp power transistor 2 sa1352 electrical characteristi cs t c =25 v (br) cbo collector - b ase breakdown v oltage i c = - 10 a; i e = 0 - 200 v v (br) ceo collector - e mitter breakdown v oltage i c = - 1m a ; r b e = - 200 v v (br) ebo emitter - b ase breakdown v oltage i e = - 10 a; i c = 0 - 5 v v c e( sat ) collector - e mitter s aturation v oltage i c = - 20m a; i b = - 2m a - 0.6 v v be( sat ) base - e mitter s aturation v oltage i c = - 20m a; i b = - 2m a - 1.0 v i c bo collector c utoff c u rrent v c b = - 1 5 0 v ; i e = 0 - 0.1 a i ebo emitter c utoff c urrent v eb = - 4 v; i c = 0 - 0.1 a h fe dc c urrent g ain i c = - 10m a ; v ce = - 40 v 40 320 f t current - gain bandwidth product i c = - 10m a ; v ce = - 30 v 70 mhz c ob output capacitance i e = 0 ; v c b = - 30 v ; f= 1.0mhz 1.7 pf ? h fe classifications c d e f 40 - 80 60 - 120 100 - 200 160 - 320 |
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