jiangsu changji ang electronics technology co., ltd dfnwb2x2-6l-a plastic-encapsulate mosfets CJMP06 p-channel power mosfet fea ture z featuring a mosfet and schottky diode z independent pinout to each device to ease circuit design z ultra low v f schottky applica tions z li-ion battery charging z high side dc-dc conversion circuits z high side device for small brushless dc motors z power managemnet in portable , battery powered products d marking: mosfet maximum ratings (t a =25 unless other wise noted) para meter symbol value unit drain-s ource voltage v ds - 20 gate-source v oltage v gs 8 v conti nuous drain current i d -2 a po wer dissipation p d 0.7 w t hermal resistance from junction to ambient r ja 178 /w storage t emperature t j 150 junctio n temperature t st g -55 ~ +150 dfnwb 2*2-6l-a pin 1 f ront back k 1 2 3 6 5 4 a n/c d k g s v (br )dss r ds(o n) max i d - 20 v 110 m @ - 4.5 v ? - 2 a ? 150 m - 2.5 v ? @ equivalent circuit www.cj-elec.com 1 d,may,2015
para meter symbol test condition min typ max unit on/off characteristics drain-s ource breakdown voltage v (b r)dss v gs = 0v, i d = -250a -20 gate-thresho ld voltage v gs( th) v ds =v gs , i d = -250a -0.4 -1 v gate-bod y leakage current i gss v ds =0 v, v gs =8v 10 0 na z ero gate voltage drain current i ds s v ds = -20v, v gs =0 v -1 a v gs = -4.5v, i d = -2.8a 110 drain-s ource on-state resistance (note 1) r ds (on) v gs = -2.5v, i d = -2.0a 150 m ? f orward transconductance (note 1) g fs v ds = -10v, i d =-2.7a 5.5 s ch arges , capacitances and gate resistance input cap acitance (note 2) c iss 480 output capac itance (note 2) c oss 46 revers e transfer capacitance (note 2) c rss v ds = -15v,v gs =0 v,f =1mhz 10 pf t otal gate charge q g 7.2 gate-source c harge q gs 2.2 gate-drain charge q gd v ds =-6v,v gs =-4.5v,i d = -2.8a 1.2 nc s witching times (note2) t urn-on delay time t d ( on) 38 rise time t r 25 t urn-off delay time t d( off) 43 fall time t f v ds =-6 v, r l =6 ? , v gs = -4.5v,r ge n =6 ? 5 ns so urce-drain diode characteristics f orward on voltage (note1) v sd v gs =0 v, i s =-1 a -1.4 v no tes: 1. pulse test : pulse width 300s, duty cycle 2 %. 2. these parameters have no way to verify. schottky diode maximum ratings (t a =25 unless ot herwise noted) para meter symbol value unit peak re petitive reverse voltage v rrm 2 0 dc block ing voltage v r 20 v averag e rectified forward current i f 1 a schottky diode electrical characteristics (t a =25 unless other wise noted) para meter symbol test condition min typ max unit i f =0.1a 0.4 i f =0.5a 0.5 f orward voltage v f i f =1 a 0.575 v r = 20 v 15 revers e current i r v r = 10 v 5 a mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 d,may,2015
-0 -1 -2 -3 -0 -1 -2 -3 -4 -5 -0 .2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4 -5 50 100 150 200 -0 -3 -6 -9 -1 2 -15 -18 80 100 120 140 160 180 0.2 0 .3 0.4 0.5 0.6 1 0 5 10 15 20 0.1 1 10 ta=25 o c puls ed t ransfer characteristics drain current i d (a) gate to source voltage v gs (v) 0.1 -4 ta=25 o c puls ed -0 .3 -0.03 v sd i s source current i s (a) source to drain voltage v sd (v) v gs =- 3.5v,-3v,-2.5v,-2.2v,-2v,-1.8v v gs =- 1.6v v gs =- 1.4v v gs =- 1.2v v gs =- 1.0v o utput characteristics drain current i d (a) drain to source voltage v ds (v) ta=25 o c puls ed v gs =- 1.8v v gs =- 2.5v v gs =- 4.5v o n-resistance r ds (on) (m ) drain current i d (a) f orward characteristics i d r ds( on) ta=25 o c puls ed i d =- 2.1a v gs r ds( on) o n-resistance r ds (on) (m ) gate to source voltage v gs (v) ta=25 o c puls ed forward current i f (a) f orward voltage v f (v) r everse characteristics ta=25 o c puls ed reverse current i r (ua) reverse vo ltage v r (v) www.cj-elec.com 3 d,may,2015 7 \ s l f d o & k d u d f w h u l v w l f v
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