s3a - t - s3m - t tai wan semiconductor 1 version:a1 804 3a, 50v - 1000v surface mount rectifier features glass passivated chip junction ideal for automated placement low forward voltage drop high current capability high surge current capability moisture sensitivity level: level 1, per j - std - 020 compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 applications switching mode power supply (smps) adapters lighting application c onverter mechanical data case: do - 214ab (smc) molding compound meets ul 94v - 0 flammability rating terminal: matte tin plated leads, solderable per j - std - 002 polarity: as marked weight: 0.2 5 g (approximately) key parameters p arameter value unit i f 3 a v rrm 50 - 1000 v i fsm 100 a t j max 1 50 c package do - 214ab (smc) do - 214ab (smc) absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter symbol s 3a - t s 3b - t s 3d - t s3g - t s3j - t s3k - t s3m - t unit marking code on the device s3a s3b s3d s3g s3j s3k s3m repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v reverse voltage, total rms value v r(rms) 35 70 140 280 420 560 700 v forward current i f 3 a surge peak forward current, 8.3 ms single half sine - wave s uperimposed on rated load per diode i fsm 100 a junction temperature t j - 55 to +1 50 c storage temperature t stg - 55 to +1 50 c
s3a - t - s3m - t tai wan semiconductor 2 version:a1 804 thermal performance p arameter s ymbol typ. unit junction - to - lead thermal resistance per diode r ? jl 8 c /w junction - to - a mbient thermal resistance per diode r ? j a 56 c /w junction - to - case thermal resistance per diode r ? j c 12 c /w thermal performance note: units mounted on pcb ( 16 mm x 16 mm cu pad test board ) electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol t yp. m ax. u nit forward voltage per diode (1) i f = 1.5 a, t j = 25 c v f 0.88 - v i f = 3.0 a, t j = 25 c 0.93 1.15 v i f = 1.5 a, t j = 1 25 c 0.75 - v i f = 3.0 a, t j = 1 25 c 0.81 0.92 v reverse current @ rated v r per diode (2) t j = 25 c i r - 10 a t j = 125 c - 250 a junction capacitance 1 mhz, v r =4.0v c j 27 - pf notes: 1. pulse test with pw=0.3 ms 2. pulse test with pw= 30 ms ordering information o rder i n g code package packing s3a - t r7g smc 850 / 7" plastic reel s3a - t m6 g smc 3,000 / 13" plastic reel s3b - t r7g smc 850 / 7" plastic reel s3b - t m6 g smc 3,000 / 13" plastic reel s3d - t r7g smc 850 / 7" plastic reel s3d - t m6 g smc 3,000 / 13" plastic reel s3g - t r7g smc 850 / 7" plastic reel s3g - t m6 g smc 3,000 / 13" plastic reel s3j - t r7g smc 850 / 7" plastic reel s3j - t m6 g smc 3,000 / 13" plastic reel s3k - t r7g smc 850 / 7" plastic reel s3k - t m6 g smc 3,000 / 13" plastic reel s3m - t r7g smc 850 / 7" plastic reel s3m - t m6 g smc 3,000 / 13" plastic reel
s3a - t - s3m - t tai wan semiconductor 3 version:a1 804 characteristics curves (t a = 25c unless otherwise noted) fig.1 forward current derating curve fig.2 typical junction capacitance fig.3 typical reverse characteristics fig . 4 typical forward characteristics 1 10 100 1000 1 10 100 f=1.0mhz vsig=50mvp - p 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 c t j =125 c 0.1 1 10 0.5 0.6 0.7 0.8 0.9 1 1.1 pulse width 300s 1% duty cycle pulse width 300s 1% duty cycle t j =25 c t j =125 c capacitance (pf) instantaneous reverse current ( a) percent of rated peak reverse voltage (%) instantaneous forward current (a) (a) 0.001 0.01 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 pulse width t j =25 c t j =125 c uf1dlw forward voltage (v) average forward current (a) reverse voltage (v) lead temperature ( c) 0 1 2 3 4 25 50 75 100 125 150 heat sink 16mm x 16mm cu pad test board
s3a - t - s3m - t tai wan semiconductor 4 version:a1 804 package outline dimensions do - 214a b (sm c ) dim. unit (mm) unit (inch) min max min max a 2.90 3.20 0.114 0.126 b 6.60 7.11 0.260 0.280 c 5.59 6.22 0.220 0.245 d 2.00 2.62 0.079 0.103 e 1.00 1.60 0.039 0.063 f 7.75 8.13 0.305 0.320 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 suggested pad layout symbol unit (mm) unit (inch) a 3.3 0 0.130 b 2.5 0 0.098 c 6.8 0 0.268 d 4.4 0 0.173 e 9.4 0 0.370 marking diagram p/n = marking code g = green compound y w = date code f = factory code
s3a - t - s3m - t tai wan semiconductor 5 version:a1 804 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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