CHEMX3PT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t dual silicon transistor v o l t a g e 5 0 v o l t s c u r r e n t 150 mampere a p p l i c a t i o n feature * two the 2sc2412k in one package. c i r c u i t 2sc2412k limiting v alues n o t e 1 . t r a n s i s t o r m o u n t e d o n c e r a m i c s u b s t r a t e 5 0 m m x 5 0 m m x 0 . 8 t . m a x i m u m r a t i n g e s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) r a t i n g s c o n d i t i o n c o l l e c t o r - b a s e v o l t a g e c o l l e c t o r - e m i t t e r v o l t a g e e m i t t e r - b a s e v o l t a g e o p e n e m i t t e r o p e n b a s e o p e n c o l l e c t o r c o l l e c t o r c u r r e n t d c p e a k c o l l e c t o r c u r r e n t p e a k b a s e c u r r e n t t o t a l p o w e r d i s s i p a t i o n t a 2 5 o c ; n o t e 1 s t o r a g e t e m p e r a t u r e j u n c t i o n t e m p e r a t u r e o p e r a t i n g a m b i e n t t e m p e r a t u r e s y m b o l v c b o v c e o v e b o i b m t a m b t j t s t g i c m i c m i n . m a x . u n i t s - 6 0 v o l t s v o l t s v o l t s m a m p s m a m p s m a m p s m w o c o c o c - 5 0 - 7 - 1 5 0 - 1 5 0 - 1 5 - 15 0 - 5 5 + 1 5 0 - + 1 5 0 - 5 5 + 1 5 0 p t o t * s m a l l s i g n a l a m p l i f i e r . * low cob. cob=2.0pf(typ.) * high saturation current capability. * p c = 150mw ( total),120mw per element must not be exceeded. * low saturation voltage v ce(sat) =0.4v(max.)(i c =50ma) * npn silicon transistor 2 0 04-11 * s m a l l s u r f a c e m o u n t i n g t y p e . (sot-563) sot-563 4 6 3 1 marking * x3 (5) 1.5~1.7 0.5~0.6 0.09~0.18 sot-563 dimensions in millimeters 0.50 0.50 0.9~1.1 1.5~1.7 0.15~0.3 1.1~1.3 (4) (1) (3)
2sc2412k chara cteristics electrical characteristics ( at t a = 25 o c unless otherwise noted ) parameters condition collector cut-off current emitter cut-off current dc current gain i e =0; v cb =60v i c =0; v eb =7v v ce =6v i c =1ma collector-emitter saturation voltage i c =50ma; i b =5ma i e =ie=0; v cb =12v; f=1mhz i c =2ma; v ce =12v; f=100mhz output collector capacitance transition frequency symbol i cbo i ceo h fe c ob f t v cesat min. max. type units - 0.1 ua volts pf mhz - - 0.1 - 120 560 - - 0.4 - - 3.5 2 - - 180 collector-base breakdown voltage i c =50ua bv cbo - - - - - - volts volts volts collector-emitter breakdown voltage i c =1ma emitter-base breakdown voltage bv ceo i e =50ua bv ebo 50 60 7 r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHEMX3PT )
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHEMX3PT ) 2sc2412k typical electrical characteristics fig.1 grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta = 100 o c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) 25 o c 55 o c fig.2 grounded emitter output characteristics 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35m a 0.20ma ta=25 o c i b =0a 0 .4 0m a 0.4 5ma 0.50ma 0.2 20 10 0.5 1 2 5 1 0 2 0 5 0 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 o c fig.3 dc current gain vs. collector current (1) dc current gain : h fe collector current : i c (ma) 0.2 0.5 1 2 5 1 0 2 0 5 0 100 200 20 10 50 100 200 500 25 o c -55 o c ta=100 o c v ce = 5v fig.4 dc current gain vs. collector current (2) dc current gain : h fe collector current : i c (ma) fig. 5 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 1 0 2 0 5 0 100 i c /i b =50 20 10 ta=25 fig.6 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 1 0 2 0 5 0 100 200 i c /i b =10 ta=100 o c 25 o c -55 o c fig.7 gain bandwidth product vs. emitter current 50 0.5 1 2 5 10 20 50 100 200 500 ta=25 o v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) 100 fig.8 base-collector time constant vs. emitter current 0.2 0.5 1 2 5 10 base collector time constant : ccr bb' (ps) emitter current : i e (ma) 10 20 50 100 200 ta=25 o c f=32mh z v cb =6v
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