ji angsu changjiang electronics technology co., ltd sop8 plastic-encapsulate mosfets CJQ9926 dual n-chan nel mosfet feature z advanced trench process technology z high density cell design fo r ultra low on-resistance z high power and current handing cap ability z ideal for liion battery pack applications marking maximum ratings (t a =25 unless other wise noted) paramete r symbol value unit drain-sourc e voltage v ds 20 v gate-source vo ltage v gs 12 v continuo us drain current * i d 4.8 a pulsed drain current i dm 30 a pow er dissipation * p d 1.25 w thermal resist ance from junction to ambient * r ja 100 / w junction temperature t j 150 storage te mperature t stg -55~+ 150 * surface mounted on 1? x 1? fr4 board. v (br) dss r ds(on) max i d 20 v 40 m @ 2.5 v ? 4.8 a ? 30 m 4.5 v ? @ sop8 equivalent circuit www.cj-elec.com 1 d , ma r ,201 6 soli d dot = green molding compound device, if none,the normal device. q9926 = device co de yy = d ate code soli d dot = pin1 indicator
parameter symbol test conditio n min typ max unit static charac teristics drain-source breakdow n voltage v (br)dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs = 0v 1 a gate-body leakage current i gss v gs =12v, v ds = 0v 100 na gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =250a 0.6 1.0 1.2 v v gs =2.5v, i d =5a 28 40 m ? drain-source on-resistance (n ote 1) r ds(on) v gs =4.5v, i d =6a 20 30 m ? forward transconductanc e (note 1) g fs v ds =15v, i d =6a 15 s switching characte ristics (note 2) turn-on delay time t d(on) 35 ns turn-on rise time t r 60 ns turn-off delay time t d(off) 75 ns turn-off fall time t f v gen =4.5v,v dd =15v, r gen =6 ?, i d =1a, r l =15 ? 30 ns total gate charge q g 20 nc gate-source charge q gs 3 nc gate-drain charge q gd v ds =15v,v gs =4.5v,i d =6a 3.3 nc source-drain diode charact eristics maximum diode forward curr e nt i s 1 a diode forward voltage (note 1 ) v sd i s =1.7a,v gs =0v 1.2 v source-drain reverse recovery ti me t rr i f = 1.7 a, di/dt = 100 a/ s 80 ns notes : 1. pulse test : pulse width 3 00s, duty cycle 2%. 2. guaranteed by design, not subject to production 0 2 6 ) ( 7 ( / ( & |