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r07ds0232ej0300 rev.3.00 page 1 of 8 jul 30, 2013 preliminary datasheet cr12cm-12b 600v - 12a - thyristor medium power use features ? i t (av) : 12 a ? v drm : 600 v ? i gt : 30 ma ? the product guaranteed maximum junction temperature of 150c ? non-insulated type ? planar passivation type outline 1 2 3 4 4 renesas packa g e code: prss0004a a - a a a ( packa g e name: to-220 ) 1 2 3 renesas package code: prss0004ag-a (package name: to-220ab) 2 , 4 1 3 1. c athod e 2. anode 3. gate 4. anode applications switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications maximum ratings parameter symbol voltage class unit 12 repetitive peak reverse voltage v rrm 600 v non-repetitive peak reverse voltage v rsm 720 v dc reverse voltage v r (dc) 480 v repetitive peak off-state voltage v drm 600 v dc off-state voltage v d (dc) 480 v r07ds0232ej0300 rev.3.00 jul 30, 2013
cr12cm-12b preliminary r07ds0232ej0300 rev.3.00 page 2 of 8 jul 30, 2013 parameter symbol ratings unit conditions rms on-state current i t (rms) 18.8 a average on-state current i t (av) 12 a commercial frequency, sine half wave 180 conduction, tc = 116c note2 surge on-state current i tsm 360 a 60hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 544 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 10 v peak gate forward current i fgm 2 a junction temperature tj ? 40 to +150 c storage temperature tstg ? 40 to +150 c mass ? 2.1 g typical value electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 2.0/5.0 ma tj = 125c/150c, v rrm applied repetitive peak off-state current i drm ? ? 2.0/5.0 ma tj = 125c/150c, v drm applied on-state voltage v tm ? ? 1.6 v tc = 25c, i tm = 40 a, instantaneous value gate trigger voltage v gt ? ? 1.5 v tj = 25c, v d = 6 v, i t = 1 a gate non-trigger voltage v gd 0.2/0.1 ? ? v tj = 125c/150c, v d = 1/2 v drm gate trigger current i gt ? ? 30 ma tj = 25c, v d = 6 v, i t = 1 a holding current i h ? 15 ? ma tj = 25c, v d = 12 v thermal resistance r th (j-c) ? ? 1.2 c/w junction to case note1 note2 notes: 1. the contact thermal resistance r th (c-f) in case of greasing is 1.0c/w. 2. case temperature is measured at anod e tab 1.5 mm away from the molded case. cr12cm-12b preliminary r07ds0232ej0300 rev.3.00 page 3 of 8 jul 30, 2013 performance curves ?40 160 04080120 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 ? 40 160 04080 120 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction temperature junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) typical example typical example 0.81.21.62.02.42.8 3.2 tc = 25c 10 3 10 2 10 1 10 0 240 80 0 160 320 400 10 0 10 1 10 2 10 1 10 2 10 1 10 0 10 ?1 10 ?2 10 2 10 3 10 4 i fgm = 2 a v gd = 0.1 v p gm = 5 w i gt = 30 ma v gt = 1.5 v p g(av) = 0.5 w v fgm = 6 v 10 -1 10 -4 10 -3 10 -2 10 -1 10 -2 10 1 10 0 cr12cm-12b preliminary r07ds0232ej0300 rev.3.00 page 4 of 8 jul 30, 2013 1.4 1.0 1.2 0 0.2 0.4 0.6 0.8 1.6 60 90 120 180 = 30 160 120 100 60 20 0 40 80 140 32 0 4 8 12 16 24 28 20 160 120 100 60 20 0 40 80 140 = 30 60 90 120 180 28 20 24 048 12 16 32 56 64 48 40 32 24 16 0 8 = 30 60 90 120 180 0 1.4 1.0 1.2 0.2 0.4 0.6 0.8 1.6 = 30 60 90 120 180 160 120 100 60 20 0 40 80 140 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (c) average on-state current (a) case temperature (c) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) allowable ambient temperature vs. average on-state current (single-phase full wave) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (c) ambient temperature (c) average on-state current (a) average on-state current (a) average on-state current (a) resistive loads 360 resistive, inductive loads natural convection 360 resistive loads 360 resistive loads natural convection 360 24 08 16 28 412 20 32 64 48 32 16 56 40 24 6 0 = 30 60 90 120 180 resistive, inductive loads 360 24 036912 1821 15 160 120 100 60 20 0 40 80 140 resistive, inductive loads 360 = 30 60 90 120 180 cr12cm-12b preliminary r07ds0232ej0300 rev.3.00 page 5 of 8 jul 30, 2013 10 3 10 2 10 1 ?4 00 4 0 80 120 160 average power d i ss i pat i on (w) case t emperature (c) average on - state current (a) average on - state current (a) max i mum average power d i ss i pat i on (rectangu l ar wave) a ll owab l e case t emperature vs . average on - state current (rectangu l ar wave) amb i ent t emperature (c) average on - state current (a) a ll owab l e amb i ent t emperature vs . average on - state current (rectangu l ar wave) breakover vo l tage vs . junct i on t emperature junct i on t emperature (c) 100 (%) breakover vo l tage ( t j = tc) breakover vo l tage ( t j = 25c) breakover vo l tage vs . rate of r i se of off - state vo l tage rate of r i se of off - state vo l tage (v / s) 100 (%) breakover vo l tage (dv / dt = vv / s) breakover vo l tage (dv / dt = 1v / s) t yp i ca l e xamp l e 180 2 7 0 dc = 30 60 90 120 28 20 2 4 0 4 8 12 16 32 56 6 4 4 8 4 0 32 2 4 16 0 8 360 res i st i ve, i nduct i ve l oads 32 0 4 81216 2 4 28 20 160 120 100 60 20 0 4 0 80 1 4 0 180 2 7 0 = 30 60 90 120 360 res i st i ve, i nduct i ve l oads dc 1 .4 1 . 01 . 2 00 . 20 .4 0 . 60 . 8 1 . 6 60 90 120 180 = 30 160 120 100 60 20 0 4 0 80 1 4 0 160 120 100 60 20 0 4 0 80 1 4 0 160 120 100 60 20 0 4 0 80 1 4 0 2 7 0 360 res i st i ve, i nduct i ve l oads n atura l convect i on 10 1 10 2 10 3 10 4 t yp i ca l e xamp l e t j = 125c breakover vo l tage vs . rate of r i se of off - state vo l tage rate of r i se of off - state vo l tage (v / s) 100 (%) breakover vo l tage (dv / dt = vv / s) breakover vo l tage (dv / dt = 1v / s) 10 1 10 2 10 3 10 4 t yp i ca l e xamp l e t j = 150c dc cr12cm-12b preliminary r07ds0232ej0300 rev.3.00 page 6 of 8 jul 30, 2013 10 ? 1 10 0 10 1 10 2 ?40 0 40 80 120 160 160 120 40 80 140 100 20 60 0 typical example gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) junction temperature (c) 100 (%) repetitive peak reverse voltage (tj = tc) repetitive peak reverse voltage (tj = 25c) gate current pulse width ( s) repetitive peak reverse voltage vs. junction temperature typical example holding current vs. junction temperature junction temperature (c) 100 (%) holding current (tj = tc) holding current (tj = 25c) 10 3 10 2 10 1 10 3 10 2 10 1 0 40 80 120 160 typical example cr12cm-12b preliminary r07ds0232ej0300 rev.3.00 page 7 of 8 jul 30, 2013 package dimensions unit: mm sc -4 6 2.1 g mass[t y p. ] t o -22 0 ab s pr ss000 4a g - a rene s a s c od e jeita packa g e cod e previous c ode packa g e nam e t o -22 0 a b 9.9 0.2 4.5 0.2 2.8 0.1 15. 7 0.2 9.2 0.2 13.08 0.20 0.80 0.10 2.6 max 1.62 max 10.0 0.2 2.54 2.54 (3.00) 3.6 0.2 1.30 + 0.10 ? 0.05 0.50 + 0.10 ? 0.05 sc -4 6 2.0 g mass[t y p. ] ? 7 . 0 3 .2 packa g e nam e t o -22 0 2 1.0 cr12cm-12b preliminary r07ds0232ej0300 rev.3.00 page 8 of 8 jul 30, 2013 ordering information orderable part number packing quantity remark cr12cm-12b#bb0 tube 50 pcs. straight type CR12CM-12B-A8#bb0 tube 50 pcs. a8 lead form note: please confirm the specificati on about the shipping in detail. notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. 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