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hsms-285x series surface mount zero bias schottky detector diodes data sheet sot-23/sot-143 package lead code identifcation (top view) description avagos hsms-285x family of zero bias schottky detector diodes has been designed and opti m ized for use in small signal (pin <-20 dbm) applications at frequencies below 1.5 ghz. they are ideal for rf/id and rf tag applications where primary (dc bias) power is not available. important note: for detector applications with input power levels greater than C20 dbm, use the hsms-282x series at frequencies below 4.0 ghz, and the hsms-286x series at frequencies above 4.0 ghz. the hsms-285x series is not recommended for these higher power level applications. available in various package co n fgurations, these detec - tor diodes provide low cost solutions to a wide variety of design problems. avagos manufacturing techniques assure that when two diodes are mounted into a single package, they are taken from adjacent sites on the wafer, assuring the highest possible degree of match. pin connections and package marking sot-323 package lead code identifcation (top view) features ? surface mount sot-23/sot - 143 packages ? miniature sot-323 and sot - 363 packages ? high detection sensitivity: up to 50 mv/w at 915 mhz ? low flicker noise: -162 dbv/hz at 100 hz ? low fit (failure in time) rate* ? tape and reel options available ? matched diodes for consistent performance ? better thermal conductivity for higher power dissipation ? lead-free * for more information see the surface mount schottky reliability data sheet. sot-363 package lead code identifcation (top view) series c single b 1 2 3 1 2 3 bridge quad p unconnected trio l 1 2 3 6 5 4 1 2 3 6 5 4 attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 0) refer to avago application note a004r: electrostatic discharge damage and control. notes: 1. package marking provides orientation and identifcation. 2. see electrical specifcations for appropriate package marking. plx 1 2 3 6 5 4 u n c o n n e c t e d p a i r # 5 s e r i e s # 2 s i n g l e # 0 1 2 3 1 2 3 4 1 2 3
2 sot-23/sot-143 dc electrical specifcations, t c = +25c, single diode maximum maximum part package forward reverse typical number marking lead voltage leakage, capacitance hsms- code code confguration v f (mv) i r (a) c t (pf) 2850 p0 0 single 150 250 175 0.30 2852 p2 2 series pair [1,2] 2855 p5 5 unconnected pair [1,2] test i f = 0.1 ma i f = 1.0 ma v r =2v v r = C0.5 v to C1.0v conditions f = 1 mhz notes: 1. ?vf for diodes in pairs is 15.0 mv maximum at 1.0 ma. 2. ?ct for diodes in pairs is 0.05 pf maximum at C0.5v. rf electrical specifcations, t c = +25c, single diode part number typical tangential sensitivity typical voltage sensitivity typical video hsms- tss (dbm) @ f = 915 mhz g (mv/w) @ f = 915 mhz resistance rv (k) 2850 C 57 40 8.0 2852 2855 285b 285c 285l 285p test video bandwidth = 2 mhz power in = C40 dbm conditions zero bias r l = 100 k, zero bias zero bias sot-323/sot-363 dc electrical specifcations, t c = +25c, single diode maximum maximum part package forward reverse typical number marking lead voltage leakage, capacitance hsms- code code confguration v f (mv) i r (a) c t (pf) 285b p0 b single 150 250 175. 0.30 285c p2 c series pair 285l pl l unconnected trio 285p pp p bridge quad test i f = 0.1 ma i f = 1.0 ma vr=2v v r = 0.5 v to C1.0v conditions f = 1 mhz notes: 1. ?vf for diodes in pairs is 15.0 mv maximum at 1.0 ma. 2. ?ct for diodes in pairs is 0.05 pf maximum at C0.5v.
3 equivalent linear circuit model hsms-285x chip spice parameters parameter units hsms-285x b v v 3.8 c j0 pf 0.18 e g ev 0.69 i bv a 3 e -4 i s a 3 e-6 n 1.06 r s 25 p b (v j ) v 0.35 p t (xti) 2 m 0.5 absolute maximum ratings, t c = +25c, single diode symbol parameter unit absolute maximum [1] sot-23/143 sot-323/363 p iv peak inverse voltage v 2.0 2.0 t j junction temperature c 150 150 t stg storage temperature c -65 to 150 -65 to 150 t op operating temperature c -65 to 150 -65 to 150 jc thermal resistance [2] c/w 500 150 notes: 1. operation in excess of any one of these conditions may result in permanent damage to the device. 2. t c = +25c, where t c is defned to be the temperature at the package pins where contact is made to the circuit board. esd warning: handling precautions should be taken to avoid static discharge. c j r j r s r j = 8.33 x 10 -5 nt i b + i s where i b = e xter nally applied bias current in amps i s = saturation current (see tab le of spice parameters) t = temperature , k n = ideality f actor (see tab le of spice parameters) note: to eff ectiv ely model the pac kaged hsms-285x product, please ref er to application note an1124. r s = ser ies resistance (see ta b le of spice parameters) c j = junction capacitance (see ta b le of spice parameters)
4 typical parameters, single diode figure 1. typical forward current vs. forward voltage. figure 2. +25 c output voltage vs. input power at zero bias. figure 3. +25 c expanded output voltage vs. input power. see figure 2. figure 4. output voltage vs. temperature. i f ? forward current (ma) 0 0.01 v f ? forward voltage (v) 0.8 1.0 100 1 0.1 0.2 1.8 10 1.4 0.4 0.6 1.2 1.6 voltage out (mv) -50 0.1 power in (dbm) -30 -20 10000 10 1 -40 0 100 -10 1000 r l = 100 k ? diodes tested in fixed-tuned fr4 microstrip circuits. 915 mhz voltage out (mv) -50 0.3 power in (dbm) -30 10 1 -40 30 r l = 100 k ? 915 mhz diodes tested in fixed-tuned fr4 microstrip circuits. output voltage (mv) 0 0.9 temperature ( c) 40 50 3.1 2.1 1.5 10 100 2.5 80 20 30 70 90 60 1.1 1.3 1.7 1.9 2.3 2.7 2.9 measurements made using a fr4 microstrip circuit. frequency = 2.45 ghz p in = -40 dbm r l = 100 k ?
5 appl i cations information introduction avagos hsms - 285x family of schottky detector diodes has been developed specifcally for low cost, high volume designs in small signal (p in < -20 dbm) applica - tions at frequencies below 1.5 ghz. at higher frequen - cies, the dc biased hsms-286x family should be consid - ered. in large signal power or gain control applications (p in > -20 dbm), the hsms-282x and hsms-286x prod - ucts should be used. the hsms-285x zero bias diode is not designed for large signal designs. schottky barrier diode characteristics stripped of its package, a schottky barrier diode chip consists of a metal-semiconductor barrier formed by de - position of a metal layer on a semiconductor. the most common of several diferent types, the passivated diode, is shown in figure 5, along with its equivalent circuit. the height of the schottky barrier the current-voltage characte r istic of a schottky barrier diode at room temperature is described by the following equation: hsms-285a/6a fig 9 r s r j c j metal schottky junctio n passivation passivatio n n-type or p-type epi layer n-type or p-type silicon substrate cross-section of schottk y barrier diode chip equivalent circuit l p r s r v c j c p for the hsms-285x series c p = 0.08 pf l p = 2 nh c j = 0.18 pf r s = 25 ? r v = 9 k ? figure 5. schottky diode chip. r s is the parasitic series resistance of the diode, the sum of the bondwire and leadframe resistance, the resistance of the bulk layer of silicon, etc. rf energy coupled into r s is lost as heat it does not contribute to the rectifed output of the diode. c j is parasitic junction capac i tance of the diode, controlled by the thickness of the epitaxial layer and the diameter of the schottky contact. r j is the junction resistance of the diode, a function of the total current fowing through it. figure 6. equivalent circuit of a schottky diode. where n = ideality factor (see table of spice parameters) t = temperature in k i s = saturation current (see table of spice parameters) i b = externally applied bias current in amps i s is a function of diode barrier height, and can range from picoamps for high barrier diodes to as much as 5 a for very low barrier diodes. on a semi-log plot (as shown in the avago catalog) the current graph will be a straight line with inverse slope 2.3 x 0.026 = 0.060 volts per cycle (until the efect of r s is seen in a curve that droops at high current). all schottky diode curves have the same slope, but not necessar - ily the same value of current for a given voltage. this is dete r mined by the saturation current, i s , and is related to the barrier height of the diode. through the choice of p-type or n - type silicon, and the selection of metal, one can tailor the characteristics of a schottky diode. barrier height will be altered, and at the same time c j and r s will be changed. in general, very low barrier height diodes (with high values of i s , suit - able for zero bias applic a tions) are realized on p - type silicon. such diodes sufer from higher values of r s than do the n - type. thus, p-type diodes are generally reserved for small signal detector applications (where very high values of r v swamp out high r s ) and n-type diodes are used for mixer applications (where high l.o. drive levels keep r v low). measuring diode parameters the measurement of the fve elements which make up the low frequency equivalent circuit for a pac k aged schottky diode (see figure 6) is a complex task. various techniques are used for each element. the task begins with the elements of the diode chip itself. v - i r s i = i s ( e x p ( ) - 1 ) 0 . 0 2 6 0 . 0 2 6 i f 2 6 , 0 0 0 r v i s + i b 8 . 3 3 x 1 0 - 5 n t r j = v ? r s i s + i b 0 . 0 2 6 = a t 2 5 c i s + i b = r r s = r d ? v - i r s i = i s ( e x p ( ) - 1 ) 0 . 0 2 6 0 . 0 2 6 i f 2 6 , 0 0 0 r v i s + i b 8 . 3 3 x 1 0 - 5 n t r j = v ? r s i s + i b 0 . 0 2 6 = a t 2 5 c i s + i b = r r s = r d ?
6 r s is perhaps the easiest to measure accurately. the v-i curve is measured for the diode under forward bias, and the slope of the curve is taken at some relatively high value of current (such as 5 ma). this slope is converted into a resistance r d . detector circuits when dc bias is available, schottky diode detec - tor circuits can be used to create low cost rf and mi - crowave receivers with a sensitivity of -55 dbm to -57 dbm. [1] these circuits can take a variety of forms, but in the most simple case they appear as shown in figure 8. this is the basic detector circuit used with the hsms - 285x family of diodes. in the design of such detector circuits, the starting point is the equivalent circuit of the diode, as shown in figure 6. of interest in the design of the video portion of the circuit is the diodes video impedance the other four elements of the equi v alent circuit disappear at all reasonable video frequencies. in general, the lower the diodes video impedance, the better the design. [1] avago application note 923, schottky barrier diode video detectors. hsms-285a/6a fig 10 insertion loss (db) 3 -40 frequency (mhz) -10 -25 3000 -20 10 1000 100 -35 -30 -15 50 ? 50 ? 0.16 pf 50 ? 50 ? 9 k ? video out rf in z-match network video out z-match network rf in figure 7. measuring c j and r v . at frequencies below 10 mhz, the video resistance dom - inates the loss and can easily be calc u lated from it. at frequencies above 300 mhz, the junction capacitance sets the loss, which plots out as a straight line when frequency is plotted on a log scale. again, calculation is straightforward. l p and c p are best measured on the hp8753c, with the diode terminating a 50 line on the input port. the re - sulting tabulation of s 11 can be put into a microwave linear analysis program having the fve element equiv - alent circuit with r v , c j and r s fxed. the optimizer can then adjust the values of l p and c p until the calculated s 11 matches the measured values. note that extreme care must be taken to de - embed the parasitics of the 50 test fxture. figure 8. basic detector circuits. the situation is somewhat more complicated in the design of the rf impedance matching ne t work, which includes the pac k age inductance and capacitance (which can be tuned out), the series resistance, the junc - tion capacitance and the video resistance. of these fve elements of the diodes equi v alent circuit, the four para - sitics are constants and the video resistance is a function of the current fowing through the diode. r v and c j are very difcult to measure. consider the imped ance of c j = 0.16 pf when measured at 1 mhz it is approximately 1 m. for a well designed zero bias schottky, r v is in the range of 5 to 25 k, and it shorts out the junction capacitance. moving up to a higher fre - quency enables the measurement of the capac i tance, but it then shorts out the video resistance. the best mea - surement technique is to mount the diode in series in a 50 microstrip test circuit and measure its insertion loss at low power levels (around -20 dbm) using an hp8753c network analyzer. the resulting display will appear as shown in figure 7. where i s = diode saturation current in a i b = bias current in a saturation current is a function of the diodes design, [2] and it is a constant at a given temper a ture. for the hsms-285x series, it is typically 3 to 5 a at 25c. saturation current sets the detection sensitivity, video re - sistance and input rf impedance of the zero bias schottky detector diode. since no external bias is used with the hsms-285x series, a single transfer curve at any given fre - quency is obtained, as shown in figure 2. v - i r s i = i s ( e x p ( ) - 1 ) 0 . 0 2 6 0 . 0 2 6 i f 2 6 , 0 0 0 r v i s + i b 8 . 3 3 x 1 0 - 5 n t r j = v ? r s i s + i b 0 . 0 2 6 = a t 2 5 c i s + i b = r r s = r d ? v - i r s i = i s ( e x p ( ) - 1 ) 0 . 0 2 6 0 . 0 2 6 i f 2 6 , 0 0 0 r v i s + i b 8 . 3 3 x 1 0 - 5 n t r j = v ? r s i s + i b 0 . 0 2 6 = a t 2 5 c i s + i b = r r s = r d ?
7 the most difcult part of the design of a detector circuit is the input impedance matching network. for very broadband detectors, a shunt 60 resistor will give good input match, but at the expense of detection sensitivity. when maximum sensitivity is required over a narrow band of frequencies, a reactive matching network is optimum. such ne t works can be realized in either lumped or distributed elements, depending upon fre - quency, size constraints and cost limitations, but certain general design principals exist for all types. [3] design work begins with the rf impe dance of the hsms-285x series, which is given in figure 9. [2] avago application note 969, an optimum zero bias schottky detector diode. [3] avago application note 963, impedance matching techniques for mixers and detectors. hsms-285a/6a fig 13 1 ghz 2 3 4 5 6 0.2 0.6 1 2 5 hsms-285a/6a fig 14 65nh 100 pf video out rf input width = 0.050" length = 0.065" width = 0.015" length = 0.600" transmission line dimensions are for microstrip on 0.032" thick fr-4. hsms-285a/6a fig 15 frequency (ghz): 0.9-0.93 hsms-285a/6a fig 16 return loss (db) 0.9 -20 frequency (ghz) 0.915 0 -10 -15 0.93 -5 figure 9. rf impedan ce of the hsm s - 285x series at-40 dbm. 915 mhz detector circuit figure 10 illustrates a simple impedance matching network for a 915 mhz detector. figure 10. 915 mhz matching network for the hsms-285x series at zero bias. a 65 nh inductor rotates the impedance of the diode to a point on the smith chart where a shunt inductor can pull it up to the center. the short length of 0.065" wide microstrip line is used to mount the lead of the diodes sot - 323 package. a shorted shunt stub of length 8 such a circuit ofers several advantages. first the voltage outputs of two diodes are added in series, increasing the overall value of voltage sensitivity for the network (com - pared to a single diode detector). second, the rf imped - ances of the two diodes are added in parallel, making the job of reactive matching a bit easier. such a circuit can easily be realized using the two series diodes in the hsms-285c. flicker noise reference to figure 5 will show that there is a junc - tion of metal, silicon, and passivation around the rim of the schottky contact. it is in this three-way junction that ficker noise [5] is generated. this noise can severely reduce the sensitivity of a crystal video receiver utiliz - ing a schottky detector circuit if the video frequency is below the noise corner. flicker noise can be substantially reduced by the elimination of passivation, but such diodes cannot be mounted in non-hermetic packages. p - type silicon schottky diodes have the least ficker noise at a given value of external bias (compared to n - type silicon or gaas). at zero bias, such diodes can have extremely low values of ficker noise. for the hsms-285x series, the noise temperature ratio is given in figure 14. any schottky junction, be it an rf diode or the gate of a mesfet, is relatively delicate and can be burned out with excessive rf power. many crystal video receivers used in rfid (tag) applications fnd themselves in poorly controlled environments where high power sources may be present. examples are the areas around airport and faa radars, nearby ham radio operators, the vicinity of a broadcast band transmitter, etc. in such environments, the schottky diodes of the receiver can be protected by a device known as a limiter diode. [6] formerly avail - able only in radar warning receivers and other high cost electronic warfare applications, these diodes have been adapted to commercial and consumer circuits. avago ofers a co m plete line of surface mountable pin limite r diodes. most notably, our hsmp - 4820 (sot- 23) can act as a very fast (nanosecond) power-sensi - tive switch when placed between the antenna and the schottky diode, shorting o ut the rf circuit temporar - ily and refecting the excessive rf energy back out the antenna. assembly instructions sot-323 pcb footprint a recommended pcb pad layout for the miniature sot- 323 (sc-70) packag e is shown in figure 15 (dimensions are in inches). this layout provides ample allowance for package placement by automated assembly equipment without adding parasiti cs that could impair the perfor - mance. figure 16 shows the pad layout for the six-lead sot-363. [4] avago application note 956-4, schottky diode voltage doubler. [5] avago application note 965-3, flicker noise in schottky diodes. [6] avago application note 1050, low cost, surface mount power limiters. noise temperature ratio (db) frequency (hz) 15 10 5 0 -5 10 100 1000 10000 100000 diode burnout figure 14. typical noise temperature ratio. noise temperature ratio is the quotient of the diodes noise power (expressed in dbv/hz) divided by the noise power of an ideal resistor of resistance r = r v . for an ideal resistor r, at 300k, the noise voltage can be computed from v = 1.287 x 10 -10 r volts/hz which can be expressed as 20 log 10 v dbv/hz thus, for a diode with r v = 9 k, the noise voltage is 12.2 nv/hz or -158 dbv/hz. on the graph of figure 14, - 158 dbv/hz would replace the zero on the vertical scale to convert the chart to one of absolute noise voltage vs. frequency. 0.026 0.039 0.079 0.022 dimensions in inches 0.026 0.075 0.016 0.035 figure 15. recommended pcb pad layout for avagos sc70 3l/sot - 323 products. figure 16. recommended pcb pad layout for avago's sc70 6l/sot -363 products.
9 figure 17. surface mount assembly profle. smt assembly reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: m ethod of heating (e.g., ir or vapor phase refow, wave soldering, etc.) circuit board ma terial, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. components with a low mass, such as the sot packages, will reach solder refow temperatures faster than those with a greater mass. avagos diodes have been qualifed to the time-tem - perature profle shown in figure 17. this profle is repre - sentative of an ir refow type of surface mount assembly process. after ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat lead-free refow profle recommendation (ipc/jedec j-std-020c) refow parameter lead-free assembly average ramp-up rate (liquidus temperature (t s(max) to peak) 3c/ second max preheat temperature min (t s(min) ) 150c temperature max (t s(max) ) 200c time (min to max) (t s ) 60-180 seconds ts(max) to tl ramp-up rate 3c/second max time maintained above: temperature (t l ) 217c time (t l ) 60-150 seconds peak temperature (t p ) 260 +0/-5c time within 5 c of actual peak temperature (t p ) 20-40 seconds ramp-down rate 6c/second max time 25 c to peak temperature 8 minutes max note 1: all temperatures refer to topside of the package, measured on the package body surface 2 5 t i m e t e m p e r a t u r e t p t l t p t l t 2 5 c t o p e a k r a m p - u p t s t s m i n r a m p - d o w n p r e h e a t c r i t i c a l z o n e t l t o t p t s m a x zones. the preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. the refow zone briefy elevates the temperature suf - ciently to produce a refow of the solder. the rates of change of temperature for the ramp-up and cool-down zones are chosen to be low enough to not cause deformation of the board or damage to compo - nents due to thermal shock. the maximum temperature in the refow zone (t max ) should not exceed 260c. these parameters are typical for a surface mount assem - bly process for avago diodes. as a general guideline, the circuit board and compo nents should be exposed only to the minimum temperatures and times necessary to achieve a uniform refow of solder.
10 outline 23 (sot-23) outline sot-323 (sc-70 3 lead) part number ordering information no. of part number devices container hsms-285x-tr2g 10000 13" reel hsms-285x-tr1g 3000 7" reel hsms-285x-blk g 100 antistatic bag where x = 0, 2, 5, b, c, l and p for hsms-285x. e b e 2 e 1 e 1 c e x x x l d a a 1 n o t e s : x x x - p a c k a g e m a r k i n g d r a w i n g s a r e n o t t o s c a l e d i m e n s i o n s ( m m ) m i n . 0 . 7 9 0 . 0 0 0 0 . 3 0 0 . 0 8 2 . 7 3 1 . 1 5 0 . 8 9 1 . 7 8 0 . 4 5 2 . 1 0 0 . 4 5 m a x . 1 . 2 0 0 . 1 0 0 0 . 5 4 0 . 2 0 3 . 1 3 1 . 5 0 1 . 0 2 2 . 0 4 0 . 6 0 2 . 7 0 0 . 6 9 s y m b o l a a 1 b c d e 1 e e 1 e 2 e l e b e 1 e 1 c e x x x l d a a 1 n o t e s : x x x - p a c k a g e m a r k i n g d r a w i n g s a r e n o t t o s c a l e d i m e n s i o n s ( m m ) m i n . 0 . 8 0 0 . 0 0 0 . 1 5 0 . 0 8 1 . 8 0 1 . 1 0 1 . 8 0 0 . 2 6 m a x . 1 . 0 0 0 . 1 0 0 . 4 0 0 . 2 5 2 . 2 5 1 . 4 0 2 . 4 0 0 . 4 6 s y m b o l a a 1 b c d e 1 e e 1 e l 1 . 3 0 t y p i c a l 0 . 6 5 t y p i c a l package dimensions
11 u s e r f e e d d i r e c t i o n c o v e r t a p e c a r r i e r t a p e r e e l n o t e : " a b " r e p r e s e n t s p a c k a g e m a r k i n g c o d e . " c " r e p r e s e n t s d a t e c o d e . e n d v i e w 8 m m 4 m m t o p v i e w a b c a b c a b c a b c e n d v i e w 8 m m 4 m m t o p v i e w n o t e : " a b " r e p r e s e n t s p a c k a g e m a r k i n g c o d e . " c " r e p r e s e n t s d a t e c o d e . a b c a b c a b c a b c n o t e : " a b " r e p r e s e n t s p a c k a g e m a r k i n g c o d e . " c " r e p r e s e n t s d a t e c o d e . e n d v i e w 8 m m 4 m m t o p v i e w a b c a b c a b c a b c device orientation for outline sot-143 for outlines sot-23, -323 for outline sot-363 outline 143 (sot-143) outline sot-363 (sc-70 6 lead) e b e2 b1 e1 e1 c e xxx l d a a1 notes: xxx-package marking drawings are not to scale dimensions (mm) min. 0.79 0.013 0.36 0.76 0.086 2.80 1.20 0.89 1.78 0.45 2.10 0.45 max. 1.097 0.10 0.54 0.92 0.152 3.06 1.40 1.02 2.04 0.60 2.65 0.69 symbo l a a1 b b1 c d e1 e e1 e2 e l e h e d e a 1 b a a 2 d i m e n s i o n s ( m m ) m i n . 1 . 1 5 1 . 8 0 1 . 8 0 0 . 8 0 0 . 8 0 0 . 0 0 0 . 1 5 0 . 0 8 0 . 1 0 m a x . 1 . 3 5 2 . 2 5 2 . 4 0 1 . 1 0 1 . 0 0 0 . 1 0 0 . 3 0 0 . 2 5 0 . 4 6 s y m b o l e d h e a a 2 a 1 e b c l 0 . 6 5 0 b c s l c
12 tape dimensions and product orientation for outline sot-23 9 max a 0 p p 0 d p 2 e f w d 1 ko 8 max b 0 13.5 max t1 descriptio n s ymbol size (mm) size (inches) lengt h widt h depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 3.15 0.10 2.77 0.10 1.22 0.10 4.00 0.10 1.0 0 + 0 .05 0.124 0.004 0.109 0.004 0.048 0.004 0.157 0.004 0.039 0.002 cavity diameter pitch positio n d p 0 e 1.50 + 0.10 4.00 0.10 1.75 0.10 0.059 + 0.004 0.157 0.004 0.069 0.004 perforatio n widt h thickness w t1 8.00 + 0.30 ? 0.10 0.229 0.013 0.315 + 0.012 ? 0.004 0.009 0.0005 carrier tape cavity to perforatio n (width direction ) cavity to perforatio n (length direction ) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distanc e between centerlin e for outline sot-143 w f e p 2 p 0 d p d 1 description symbol size (mm) size (inches) lengt h widt h depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 3.19 0.1 0 2.80 0.10 1.31 0.10 4.00 0.10 1.0 0 + 0 .25 0.126 0.00 4 0.110 0.004 0.052 0.004 0.157 0.004 0.039 + 0 .010 cavity diameter pitch positio n d p 0 e 1.50 + 0.10 4.00 0.10 1.75 0.10 0.059 + 0.004 0.157 0.004 0.069 0.004 perforatio n widt h thickness w t1 8.00 + 0.30 ? 0.10 0.254 0.013 0.315+ 0.012 ? 0.004 0.0100 0.0005 carrier tape cavity to perforatio n (width direction ) cavity to perforatio n (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.00 2 0.079 0.002 distanc e a 0 9 max 9 max t 1 b 0 k 0
tape dimensions and product orientation for outlines sot-323, -363 p p 0 p 2 f w c d 1 d e a 0 an t 1 (carrier tape thickness) t t (cover tape thickness) an b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.254 0.02 0.315 0.012 0.0100 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance for sot-323 (sc70-3 lead) an 8 c ma x for sot-363 (sc70-6 lead) 10 c ma x angle width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.00004 cover tape for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2009 avago technologies. all rights reserved. obsoletes 5989-4022en av02-1377en - may 29, 2009

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