1/2 semiconductor technical data GM200HB06BL 600v/200a 2-pack igbt module (half - bridge) features h trench igbt technology h low v ce(sat) h low turn-off loss h short tail current application h motor controls h general purpose inverters h servo controls internal circuit + _ 13 0.3 + _ 14 0.3 + _ 13 0.3 + _ 13 0.3 + _ 17 0.3 + _ 6 0.5 outline drawing unit : mm 35 0.5 + _ 28 0.5 + _ 25 0.3 + _ 17 0.3 + _ 93 0.5 + _ 80 0.5 + _ 23 0.3 + _ + _ 23 0.3 30 0.5 + _ 22 0.5 + _ + _ 30 0.5 + _ 31 0.5 1 6 7 5 4 23 maximum rating (@tc=25 ? per leg, unless otherwise noted) 1 2 6 7 3 5 4 1. c2 /e1 2. e2 3. c1 4. g1 5. e1 6. g2 7. e2 2013. 9. 02 revision no : 0 characteristic symbol rating unit collector-to-emitter voltage v ces 600 v gate-emitter voltage v ges ? 20 v continuous collector current @t c =25 ? i c 265 a @t c =80 ? 200 pulsed collector current * i cp 400 a diode continuous forward current @t c =25 ? i f 265 a @t c =80 ? 200 isolation voltage test ac @ 1 minute v iso 2500 v junction temperature t j -40 ~ +150 ? storage temperature t stg -40 ~ +125 ? weight weight 190 ? 5 g mounting torque (m6) m 5 n.m terminal connection torque (m5) m 4 n.m * half sine wave at 60hz, peak value.
2/2 GM200HB06BL thermal characteristic electrical characteristics (igbt, @tc=25 ? per leg, unless otherwise noted) characteristic symbol min typ max. unit junction to case (igbt part, per 1/2 module) r th(j-c) - 0.3 - ? /w junction to case (diode part, per 1/2 module) r th(j-c) - 0.9 - electrical characteristics (diode, @tc=25 ? per leg, unless otherwise noted) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces i c = 1ma, v ge =0v 600 - - v collector cut-off current i ces v ce =650v, v ge =0v - - 1 ma gate leakage current i ges v ge = ? 20v -600 - 600 na gate threshold voltage v ge(th) v ce =v ge , i c =6.6ma 5.5 - 7.7 v collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =200a - 1.6 2.1 v internal gate resistance r g - - 2.0 - ? dynamic turn on delay time t d(on) v cc = 300v, i c =200a, r g =3.3 ? , v ge = ? 15v, inductive load - 130 - ns rise time t r - 320 - turn off delay time t d(off) - 120 - fall time t f - 50 - turn-on switching loss e on - 8.5 - mj turn-off switching loss e off - 0.7 - gate charge q ge i c = 200a, v cc =400v, v ge =15v - 380 - nc input capacitance c ies v ce = 30v, v ge =0v, f=1 ? - 12.94 - nf output capacitance c oes - 0.65 - reverse transfer capacitance c res - 0.34 - short circuit current i sc v cc = 300v, v ge =15v t psc ? 10 k - 1100 - a characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 200a, v ge =0v - 1.9 2..3 v diode reverse recovery charge q rr i f =200a, v r =300v, di /dt =-900a/ k - 2.2 - uq diode peak reverse recovery current i rr - 240 - a 2013. 9. 02 revision no : 0
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