? 2017 ixys corporation, all rights reserved. IXYH16N170CV1 v ces = 1700v i c110 = 16a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.8v t fi(typ) = 120ns ds100786(1/17) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 1700 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a v ce = 0.8 ? v ces , v ge = 0v, t j = 150 ? c 5 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 16a, v ge = 15v, note 1 3.2 3.8 v t j = 150 ? c 4.4 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1700 v v cgr t j = 25c to 175c, r ge = 1m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 40 a i c110 t c = 110c 16 a i f110 t c = 110c 22 a i cm t c = 25c, 1ms 100 a ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 64 a (rbsoa) clamped inductive load 1360 v p c t c = 25c 310 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g high voltage xpt tm igbt w/ diode advance technical information features ? high voltage package ? high blocking voltage ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches
ixys reserves the right to change limits, test conditions, and dimensions. IXYH16N170CV1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 3.3 v t j = 150c 3.0 v i rm 22 a t rr 150 ns r thjc 0.70 c/w i f = 16a,v ge = 0v, -di f /dt = 500a/ s, v r = 1200v, t j = 150c i f = 16a,v ge = 0v, note 1 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 16a, v ce = 10v, note 1 7 12 s r gi gate input resistance 7 ? c ie s 1165 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 88 pf c res 23 pf q g(on) 56 nc q ge i c = 16a, v ge = 15v, v ce = 0.5 ? v ces 7 nc q gc 27 nc t d(on) 11 ns t ri 19 ns e on 2.10 mj t d(off) 140 ns t fi 120 ns e of f 1.50 mj t d(on) 15 ns t ri 20 ns e on 2.90 mj t d(off) 175 ns t fi 140 ns e off 1.95 mj r thjc 0.48c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 16a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 inductive load, t j = 150c i c = 16a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline 3 d s a l d r e e1 l1 d1 d2 a2 q c b a 0p 0k m d b m b4 0p1 1 2 4 b c e ixys option r1 r1 r1 r1 j m c a m b2 a1
? 2017 ixys corporation, all rights reserved. IXYH16N170CV1 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 28 32 00.511.522.533.544.555.56 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 8v 9v 7v 6v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 8v 11v 12v 7v 6v 9v 14v 13v fig. 3. output characteristics @ t j = 150oc 0 4 8 12 16 20 24 28 32 012345678 v ce - volts i c - amperes 8v v ge = 15v 13v 12v 11v 10v 9v 5v 6v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 16a i c = 8a i c = 32a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 3.0 4.0 5.0 6.0 7.0 8.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 32a t j = 25oc 16a 8a fig. 6. input admittance 0 10 20 30 40 50 34567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH16N170CV1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 50 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 55 60 q g - nanocoulombs v ge - volts v ce = 850v i c = 16a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w
? 2017 ixys corporation, all rights reserved. IXYH16N170CV1 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 10 20 30 40 50 60 70 80 r g - ohms e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on t j = 150oc , v ge = 15v v ce = 850v i c = 16a i c = 32a fig. 15. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 r g - ohms t f i - nanoseconds 0 100 200 300 400 500 600 700 t d(off) - nanoseconds t f i t d(off) t j = 150oc, v ge = 15v v ce = 850v i c = 32a i c = 16a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 10 12 14 16 18 20 22 24 26 28 30 32 i c - amperes e off - millijoules 1 2 3 4 5 6 7 e on - millijoules e off e on r g = 10 ? ????? v ge = 15v v ce = 850v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 e on - millijoules e off e on r g = 10 ? ???? v ge = 15v v ce = 850v i c = 16a i c = 32a fig. 16. inductive turn-off switching times vs. collector current 20 60 100 140 180 220 10 12 14 16 18 20 22 24 26 28 30 32 i c - amperes t f i - nanoseconds 50 100 150 200 250 300 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 850v t j = 150oc t j = 25oc fig. 17. inductiv e turn-off switching times v s. junction temperature 20 60 100 140 180 220 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 100 120 140 160 180 200 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 850v i c = 32a i c = 16a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH16N170CV1 ixys ref: ixy_16n170c(4p-at653) 1-26-17 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 10 12 14 16 18 20 22 24 26 28 30 32 i c - amperes t r i - nanoseconds 0 5 10 15 20 25 30 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 850v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 8 10 12 14 16 18 20 22 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 850v i c = 32a i c = 16a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 10 20 30 40 50 60 70 80 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 t d(on) - nanoseconds t r i t d(on) t j = 150oc, v ge = 15v v ce = 850v i c = 16a i c = 32a
? 2017 ixys corporation, all rights reserved. IXYH16N170CV1 fig. 21. diode forward characteristics 0 10 20 30 40 50 60 70 01234567 v f (v) i f (a) t j = 150oc t j = 25oc fig. 22. reverse recovery charge vs. -di f /dt 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 1400 1600 -di f / dt (a/s) q rr (c) i f = 32a 8a 16a t j = 150oc v r = 1200v fig. 23. reverse recovery current vs. -di f /dt 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 1400 1600 di f /dt (a/s) i rr (a) i f = 32a 16a 8a t j = 150oc v r = 1200v fig. 24. reverse recovery time vs. -di f /dt 50 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 1600 -di f /dt (a/s) t rr (ns) 8a 16a i f = 32a t j = 150oc v r = 1200v fig. 26. maximum transient thermal impedance (diode) 0.1 1 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - k / w fig. 25. dynamic parameters q rr, i rr vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 1200v i f = 16a -dif /dt = 500a/s
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