cmudw6001 surface mount ultra low leakage silicon switching diode maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 250 ma peak forward surge current, tp=1.0s i fsm 4.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =75v 250 500 pa bv r i r =100a 100 125 v v f i f =1.0ma 0.76 0.85 v v f i f =10ma 0.85 0.95 v v f i f =100ma 0.99 1.1 v c t v r =0, f=1.0mhz 1.7 2.0 pf t rr i r =i f =10ma, i rr =1.0ma, r l =100 3.0 s description: the central semiconductor cmudw6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ultramini? surface mount package, designed for switching applications requiring a extremely low leakage diode. marking code: 61w features: ? ultra low leakage current (500pa) ? high peak forward surge current (4.0a) ? space saving package with gull-wing leads applications: ? steering diode ? flyback diode ? voltage multiplier ? reverse polarity protection sot-523w case r3 (23-november 2011) www.centralsemi.com
cmudw6001 surface mount ultra low leakage silicon switching diode sot-523w case - mechanical outline lead code: 1) anode 2) no connection 3) cathode marking code: 61w www.centralsemi.com r3 (23-november 2011)
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