www.irf.com 1 irf7811avpbf ? n-channel application-specific mosfets ? ideal for cpu core dc-dc converters ? low conduction losses ? low switching losses ? minimizes parallel mosfets for high current applications ? 100% r g tested ? lead-free description this new device employs advanced hexfet power mosfet technology to achieve an unprecedented balance of on-resistance and gate charge. the reduced conduction and switching losses make it ideal for high efficiency dc-dc converters that power the latest generation of microprocessors. the irf7811av has been optimized for all parameters that are critical in synchronous buck converters including r ds(on) , gate charge and cdv/dt-induced turn-on immunity. the irf7811av offers an extremely low combination of q sw & r ds(on) for reduced losses in both control and synchronous fet applications. the package is designed for vapor phase, infra-red, convection, or wave soldering techniques. power dissipation of greater than 2w is possible in a typical pcb mount application. device characteristics top view 8 12 3 4 5 6 7 d d d d g s a s s a irf7811avpbf 08/17/04 pd-95265 irf7811av r ds(on) 11 m ? q g 17 nc q sw 6.7 nc q oss 8.1 nc absolute maximum ratings symbol units v ds v v gs c ontinuous output current t a = 25c a (v gs 4.5v) t l = 90c i dm t a = 25c t l = 90c t j , t stg c i s i sm thermal resistance symbol typ max units r ja CCC 50 r jl CCC 20 w a c/w maximum junction-to-ambient maximum junction-to-lead pulsed source current 2.5 50 2.5 -55 to 150 i d p d power dissipation continuous source current (body diode) parameter parameter drain-to-source voltage gate-to-source voltage pulsed drain current junction & storage temperature range 3.0 irf7811av 10.8 100 30 20 11.8 downloaded from: http:///
www.irf.com 2 irf7811avpbf notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10 sec. typ = measured - q oss typical values of r ds (on) measured at v gs = 4.5v, q g , q sw and q oss measured at v gs =5.0v, i f = 15a.
electrical characteristics parameter symbol min typ max units drain-to-source breakdown voltage v (br)dss 30 CCC CCC v static drain-to-source on-resistance r ds(on) CCC 11 14 m ? gate threshold voltage v gs(th) 1.0 CCC 3.0 v CCC CCC 50 a CCC CCC 20 a CCC CCC 100 ma gate-to-source leakage current i gss CCC CCC 100 na total gate charge, control fet q g CCC 17 26 nc total gate charge, synch fet q g CCC 14 21 v gs = 5.0v, v ds < 100mv pre-vth gate-to-source charge q gs1 CCC 3.4 CCC post-vth gate-to-source charge q gs2 CCC 1.6 CCC gate-to-drain ("miller") charge q gd CCC 5.1 CCC switch charge (q gs2 + q gd )q sw CCC 6.7 CCC output charge q oss CCC 8.1 12 v ds = 16v, v gs = 0 gate resistance r g 0.5 CCC 4.4 ? turn-on delay time t d(on) CCC 8.6 CCC ns rise time t r CCC 21 CCC turn-off delay time t d(off) CCC 43 CCC fall time t f CCC 10 CCC input capacitance c iss CCC 1801 CCC pf output capacitance c oss CCC 723 CCC reverse transfer capacitance c rss CCC 46 CCC diode characteristics parameter symbol min typ max units diode forward voltage v sd CCC CCC 1.3 v reverse recovery charge (with parallel schottsky) v ds = v gs , i d = 250a v ds = 30v, v gs = 0v v gs = 20v v ds = 24v, i d = 15a, v gs = 5.0v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250a v gs = 4.5v, i d = 15a di/dt = 700a/s , (with 10bq040) v dd = 16v, v gs = 0v, i d = 15a v gs = 5.0v v dd = 16v i d = 15a clamped inductive load di/dt = 700a/s v dd = 16v, v gs = 0v, i d = 15a t j = 25c, i s = 15a ,v gs = 0v v ds = 24v, v gs = 0v, t j = 100c v gs = 0v v ds = 10v conditions drain-to-source leakage current i dss v ds = 16v, i d = 15a q rr CCC 43 CCC nc nc CCC 50 CCC q rr reverse recovery charge downloaded from: http:///
www.irf.com 3 irf7811avpbf 0 5 10 15 20 0 2 4 6 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 15a 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.3 0.6 0.9 1.2 1.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j figure 1. normalized on-resistance vs. temperature figure 2. gate-to-source voltage vs. typical gate charge figure 3. typical rds(on) vs. gate-to-source voltage figure 4. typical capacitance vs. drain-to-source voltage figure 5. typical transfer characteristics figure 6. typical source-drain diode forward voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 15a 3.0 6.0 9.0 12.0 15.0 v gs, gate -to -source voltage (v) 0.008 0.010 0.012 0.014 0.016 0.018 0.020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 15a downloaded from: http:///
www.irf.com 4 irf7811avpbf figure 7. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
50 ohms probe 125ns 50 u 5 uh schottky -6a vdd 16vz500mw 50 u 450 450 mic4452bm repetition rate:100hz 8v switching time w aveforms 10% 90% v ds v gs t d( on) t f( v) t d(o ff) t r (v ) downloaded from: http:///
www.irf.com 5 irf7811avpbf so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dimensions are shown in millimeters [inches]. 5 dimens ion does not include mold prot rusions . 6 dimens ion does not include mold prot rusions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code downloaded from: http:///
www.irf.com 6 irf7811avpbf 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 downloaded from: http:///
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