MC7252KDW n-channel p-channel power mosfet ? high-side switching ? low threshold equivalent circuit marking :75 j m a c b g h k d l dimensions sot-363 revision: b 2017/05/10 www. mccsemi .com 1 of 5 mm dim min max min max note a .006 .014 0.15 0.35 b .045 .053 1.15 1.35 c .085 .096 2.15 2.45 d .026 0.65nominal g .047 .055 1.20 1.40 h .071 .087 1.80 2.20 j --- .004 --- 0.10 k .031 .043 0.80 1.10 l .010 .01 8 0.26 0.46 m .003 . 0 06 0.08 0.15 lead free finish/rohs compliant ("p" suffix designates rohs compliant. see ordering information) epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 features inches h alogen free available upon request by adding suffix "-hf"
omponents 20736 marilla street chatsworth
micro commercial components m c c r maximum ra tings (t a =25 unless otherw ise noted) symbol parameter value unit n-channel mosfet v ds drain-s ourc e v o lt ag e 60 v v gs gate-source voltage 20 v i d drain current -continuous 0.34 a i dm drain current - pulsed(note1) 1.36 a p- channel mosfet v ds drain-source vo ltage -50 v v gs gate-source voltage 20 v i d drain current -continuous -0.18 a i dm drain current ? pulsed (note1) -0.7 a power dissipation, temperature and thermal resistance p d power dissipation 0.15 w t stg r ja thermal resistance from junction to ambient (note2) 833 / w t j junction temperature 150 storage t emperature -55~+150 t l lead temperature 260 1 6 2 s1 d1 g1 3 4 5 d2 s2 g2
parameter symbol test conditions min typ max unit n- channel mosfet drain-source breakdown voltage v (br)dss v gs =0v, i d =250a 60 v zero gate voltage drain current i dss v ds =48v,v gs = 0v 1 a v gs =20v, v ds = 0v 10 a v gs =10v, v ds = 0v 200 na gate-body leakage current i gss v gs =5v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =1ma 1 1.3 2.5 v v gs =4.5v, i d =0.2a 1.1 5.3 ? drain-source on-resistance (note 3) r ds(on) v gs =10v, i d =0.5a 0.9 5 ? diode forward voltage v sd i s =0.3a, v gs = 0v 1.5 v dynamic parameters (note 4) input capacitance c iss 40 pf output capacitance c oss 30 pf reverse transfer capacitance c rss v ds =10v,v gs =0v,f =1mhz 10 pf switching parameters (note 4) turn-on delay time t d(on) 10 ns turn-off delay time t d(off) v gs =10v,v dd =50v, r l = 250 ?,r gen =5 0 ? , 15 ns revers e recov e r y time t rr 30 ns recov e red ch a r ge q r i s =300ma; d is /d t = - 100a/s;v gs =0 v ; v r =25v 30 nc p- channel m o sfet drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -50 v v ds =-50v,v gs = 0v -15 a zero gate voltage drain current i dss v ds =-25v,v gs = 0v -0.1 a gate-body leakage current i gss v gs =20v, v ds = 0v 10 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =-250a -0.9 -1.62 -2 v v gs =-5v, i d =-0.1a 5.5 10 ? drain-source on-resistance (note 3) r ds(on) v gs = -10v, i d =-0.1a 4.1 8 ? f o r w a r d transc ond uctanc e (n ote 3) g fs v ds = -25v, i d =-0.1a 0.05 s dyn a m i c ch a r a c teristics (note 4) input capacitance c iss 30 pf output capacitance c oss 10 pf reverse transfer capacitance c rss v ds =-5v,v gs =0v,f =1mhz 5 pf switching characteristics (note 4) turn-on delay time t d(on) 2.5 ns turn-on rise time t r 1 ns turn-off delay time t d(off) 16 ns turn-off fall time t f v dd =-15v, r l =5 0 ? , i d =-2 .5 a 8 ns source ? dr a i n diode c h a r a c te ristics(note 4) continuous current i s -0.18 a pulsed current i sm -0.7 a diod e for w ar d voltag e (note 3 ) v ds i s = - 0.13a, v gs = 0 v -2.2 v note: 1 surface mounted on fr-4 board using minimum pad size, 1oz copper 2 repetitive rating: pulse width limited by maximum junction temperature. 3 pulse test: pulse width 300 s, duty cycle 2% 4 these parameters have no way to verify. ele ctrical characteristics (t a =25/ unless otherwise noted) micro commercial components m c c r revision: b 2017/05/10 www. mccsemi .com 2 of 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1e-3 0.01 0.1 1 2 012345 0.0 0.4 0.8 1.2 0 300 600 900 1200 1500 0 1 2 3 4 5 024681 0 0 2 4 6 8 10 02468 0.0 0.4 0.8 1.2 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t a =25 puls ed pulsed t a =100 v sd i s ? ? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =5v,6v,7v,10v v gs =4v v gs =3v output characteristics drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed v gs =10v v gs =4.5v t a =25 pulsed on-resistance r ds(on) ( ? ) drain current i d (ma) i d ?? r ds(on) on-resistance r ds(on) ( ? ) gate to source voltage v gs (v) v gs ?? r ds(on) i d =500ma v ds =3v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) typical characteristics n -channel mos revision: b 2017/05/10 www. mccsemi .com 3 of 5 micro commercial components m c c r
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.01 -0.1 -1 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -50 -100 -150 -200 -250 -300 -350 -400 1 2 3 4 5 6 7 8 9 10 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 2 4 6 8 10 12 14 16 18 20 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 25 50 75 100 125 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 t a =100 v sd i s ?? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =-10v v gs =-6v v gs =-4.5v v gs =-4v v gs =-3v output characteristics v gs =-2.5v drain current i d (a) drain to source voltage v ds (v) v gs =-10v v gs =-5v t a =25 pulsed on-resistance r ds(on) ( ? ) drain current i d (ma) i d ?? r ds(on) t a =100 i d =-0.1a t a =25 on-resistance r ds(on) ( ? ) gate to source voltage v gs (v) v gs ?? r ds(on) v ds =-10v drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =-250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) typical characteristics p -channel mos revision: b 2017/05/10 www. mccsemi .com 4 of 5 micro commercial components m c c r
revision: b 2017/05/10 www. mccsemi .com 5 of 5 ordering information : ***important notice*** micro commercial components corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . micro commercial components corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risks of such use and will agree to hold micro commercial components corp . and all the companies whose products are represented on our website, harmless against all damages. ***life support*** mcc's products are not authorized for use as critical components in life support devices or systems without the express written approval of micro commercial components corporation. ***customer awareness*** counterfeiting of semiconductor parts is a growing problem in the industry. micro commercial components (mcc) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. mcc strongly encourages customers to purchase mcc parts either directly from mcc or from authorized mcc distributors who are listed by country on our web page cited below. products customers buy either from mcc directly or from authorized mcc distributors are genuine parts, have full traceability, meet mcc's quality standards for handling and storage. mcc will not provide any warranty coverage or other assistance for parts bought from unauthorized sources. mcc is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. device packing part number-tp tape&reel;3kpcs/reel micro commercial components m c c r
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