tsm085p03c s tai wan semiconductor 1 version: a1 703 p - channel power mosfet - 30 v, - 34 a , 8.5 m features low r ds(on) to minimize conductive l oss es low gate charge for fast p ower s witching 100% uis and r g t ested compliant to rohs d irective 2011/65/eu and in acc ordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 a pplication s dc - dc converters battery power management load switch bldc motor drives key performance parameters p arameter value unit v ds - 30 v r ds(on) (max) v gs = - 10v 8.5 m v gs = - 4.5 v 14 q g 28 nc sop - 8 note: msl 1 (moisture sensitivity level) per j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit unit drain - source voltage v ds - 30 v gate - source voltage v gs 20 v continuous drain current (note 1) t c = 25c i d - 34 a t a = 25c - 13 pulsed drain current i dm - 136 a single pulse avalanche current (note 2) i as - 2 3 a single pulse avalanche energy (note 2) e as 79 mj total power dissipation t c = 25 c p d 14 w t c = 125 c 2.8 total power dissipation t a = 25 c p d 2.2 w t a = 125 c 0.4 operating junction and storage temperature range t j , t stg - 55 to +1 50 c thermal performance p arameter s ymbol l imit unit junction to case thermal resistance r ? j c 9 c /w junction to ambient thermal resistance r ? j a 57 c /w thermal performance note : r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistances. the case - thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design.
tsm085p03c s tai wan semiconductor 2 version: a1 703 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit static drain - source breakdown voltage v gs = 0v, i d = - 250 a bv dss - 30 -- -- v gate threshold voltage v gs = v ds , i d = - 250 a v gs(th) - 1.2 - 1. 5 - 2.5 v gate - source leakage current v gs = 20 v, v ds = 0v i gss -- -- 100 na drain - source leakage current v g s = 0 v, v d s = - 30 v i dss -- -- - 1 a v g s = 0 v, v d s = - 30 v t j = 1 25 c -- -- - 10 0 drain - source on - state resistance (note 3 ) v gs = - 10v, i d = - 13 a r ds(on ) -- 7. 7 8.5 m gs = - 4.5 v, i d = - 10 a -- 11 14 forward transconductance (note 3 ) v ds = - 5 v, i d = - 13 a g fs -- 35 -- s dynamic (note 4 ) total gate charge v gs = - 10 v, v ds = - 15 v, i d = - 1 3 a q g -- 5 6 -- nc total gate charge v gs = - 4.5 v, v ds = - 15 v, i d = - 1 0 a q g -- 2 8 -- gate - source charge q gs -- 9 -- gate - drain charge q gd -- 11 -- input capacitance v gs = 0v, v ds = - 15 v f = 1.0mhz c iss -- 32 16 -- pf output capacitance c oss -- 409 -- reverse transfer capacitance c r ss -- 2 77 -- g ate resistance f = 1 .0 mhz r g 1. 8 6 12 switching (note 4 ) turn - on delay time v gs = - 10v, v ds = - 15 v, i d = - 1 3 a, r g = 2 d(on) -- 7.2 -- ns turn - on rise time t r -- 2.6 -- turn - off delay time t d(off) -- 68 -- turn - off fall time t f -- 33 -- source - drain diode forward voltag e (note 3 ) v gs = 0v , i s = - 1 3 a v sd - - - - - 1 v r everse recovery time i s = - 1 3 a , di/dt = 100a/ rr -- 34 -- ns r everse recovery charge q rr -- 1 9 -- nc notes: 1. silicon l imited cu rrent only . 2. l = 0.3 mh, v gs = - 10v, v d d = - 25 v, r g = 25, i as = - 2 3 a, starting t j = 25c 3. pulse test: pulse width 300s, duty cycle 2%. 4. switching time is essentially independent of operating temperature. ordering information part no. package packing tsm0 85p 03c s r l g sop - 8 2,500pcs / 13 reel
tsm085p03c s tai wan semiconductor 3 version: a1 703 characteristics curves ( t a = 25c unless otherwise noted) output characteristics transfer characteristics on - resistance vs. drain current gate - source voltage vs. gate charge on - resistance vs. junction temperature on - resistance vs. gate - source voltage - i d , drain current (a) - v g s , gate to source voltage (v) - i d , drain current (a) - v ds , drain to source voltage (v) r ds(on) , drain - source on - resistance ( ) - i d , drain current (a) - v g s , gate to source voltage (v) q g , gate charge (nc) r ds(on) , drain - source on - resistance (normali z ed) t j , junction temperature ( c) r ds(on) , drain - source on - resistance ( ) - v g s , gate to source voltage (v) 0 8 16 24 32 40 0 1 2 3 4 25 - 55 150 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 v gs = - 10v i d = - 13a 0 2 4 6 8 10 0 10 20 30 40 50 60 v ds = - 15v i d = - 13a 0 8 16 24 32 40 0 1 2 3 4 v gs = - 10v v gs = - 7v v gs = - 5v v gs = - 4.5v v gs = - 4v v gs = - 3.5v v gs = - 3v v gs = - 2.5v 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0 8 16 24 32 40 v gs = - 10v v gs = - 4.5v 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 2 3 4 5 6 7 8 9 10 i d = - 13a
tsm085p03c s tai wan semiconductor 4 version: a1 703 characteristics curves ( t a = 25c unless otherwise noted) capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating are a , junction - to - case source - drain diode forward current vs. voltage normalized thermal transient impedance, junction - to - case - i s , reverse drain current (a) - v s d , body diode forward voltage (v) c , capacitance (pf) - v ds , drain to source voltage (v) bv dss (normalized) drain - source breakdown voltage t j , junction temperature (c) - v ds , drain to source voltage (v) - i d , drain current (a) normalized effective transient thermal impedan ce, z ? jc t, square wave pulse duration (sec) 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 25 150 - 55 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 i d = - 1ma 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 ciss coss crss 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 single pulse r ?jc =9 c/w duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 single notes: duty = t 1 / t 2 t j = t c + p dm x z ?jc x r ?jc 0.1 1 10 100 1000 0.1 1 10 100 r ds(on) single pulse r ?jc =9 c/w t c =25 c
tsm085p03c s tai wan semiconductor 5 version: a1 703 package outline dimensions ( unit: millimeters ) sop - 8 suggested pad layout ( unit: millimeters ) marking diagram y = year code m = month code o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z) 0 85p 03 yml
tsm085p03c s tai wan semiconductor 6 version: a1 703 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product descrip tion only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implie d warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown her ein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such impro per use or sale.
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